Inventor · disambiguated record
Vladimir Bolkhovsky
Also filed as: BOLKHOVSKY VLADIMIR · BOLKHOVSKY VLADIMIR N
7 granted patents·2 pending applications·60 citations·filing 2002–2019
84Inventor score
Top patents by PatentIndex Score
9 records- 0188US10658424B2Superconducting integrated circuitMASSACHUSETTS INST TECHNOLOGY·Filed 2016·Granted May 19, 2020·14 cites·14 claims
- 0283US7696049B2Method to manufacture LDMOS transistors with improved threshold voltage controlTEXAS INSTRUMENTS INC·Filed 2006·Granted Apr 13, 2010·8 cites·20 claims
- 0371US7195965B2Premature breakdown in submicron device geometriesTEXAS INSTRUMENTS INC·Filed 2002·Granted Mar 27, 2007·14 cites·4 claims
- 0469US7141455B2Method to manufacture LDMOS transistors with improved threshold voltage controlTEXAS INSTRUMENTS INC·Filed 2003·Granted Nov 28, 2006·11 cites·7 claims
- 0568US10825950B2Semiconductor surface passivationMASSACHUSETTS INST TECHNOLOGY·Filed 2019·Granted Nov 3, 2020·1 cites·17 claims
- 0664US6800917B2Bladed silicon-on-insulator semiconductor devices and method of makingTEXAS INSTRUMENTS INC·Filed 2002·Granted Oct 5, 2004·10 cites·6 claims
- 0744US6797547B2Bladed silicon-on-insulator semiconductor devices and method of makingTEXAS INSTRUMENTS INC·Filed 2003·Granted Sep 28, 2004·2 cites·11 claims
- 0834US2004222485A1Bladed silicon-on-insulator semiconductor devices and method of makingFiled 2004·Application pending·0 cites
- 0932US2004079974A1Method for manufacturing a semiconductor device using dummy openings in a photoresist material and an LDMOS device manufactured in accordance with the methodTEXAS INSTRUMENTS INC·Filed 2002·Application pending·0 cites
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