Inventor · disambiguated record
James M. Daughton
Also filed as: DAUGHTON JAMES · DAUGHTON JAMES M · HENDRICKSON THOMAS E
49 granted patents·1 pending application·2,602 citations·filing 1976–2015
99Inventor score
Files withNVE CORP23NONVOLATILE ELECTRONICS INC12HONEYWELL INC10CORPORATE FABLES INC1DAUGHTON JAMES M1
Top patents by PatentIndex Score
50 records- 0199US6744086B2Current switched magnetoresistive memory cellNVE CORP·Filed 2002·Granted Jun 1, 2004·276 cites·59 claims
- 0298US4780848AMagnetoresistive memory with multi-layer storage cells having layers of limited thicknessHONEYWELL INC·Filed 1986·Granted Oct 25, 1988·184 cites·22 claims
- 0397US6777730B2Antiparallel magnetoresistive memory cellsNVE CORP·Filed 2002·Granted Aug 17, 2004·171 cites·68 claims
- 0497US6713195B2Magnetic devices using nanocomposite materialsNVE CORP·Filed 2002·Granted Mar 30, 2004·153 cites·52 claims
- 0596US6429640B1GMR high current, wide dynamic range sensorUS AIR FORCE·Filed 2000·Granted Aug 6, 2002·103 cites·2 claims
- 0696US4731757AMagnetoresistive memory including thin film storage cells having tapered endsHONEYWELL INC·Filed 1986·Granted Mar 15, 1988·122 cites·14 claims
- 0795US6538921B2Circuit selection of magnetic memory cells and related cell structuresNVE CORP·Filed 2001·Granted Mar 25, 2003·81 cites·100 claims
- 0895US6404191B2Read heads in planar monolithic integrated circuit chipsNVE CORP·Filed 2001·Granted Jun 11, 2002·76 cites·35 claims
- 0994US7355822B2Superparamagnetic field sensing deviceNVE CORP·Filed 2006·Granted Apr 8, 2008·13 cites·11 claims
- 1094US5617071AMagnetoresistive structure comprising ferromagnetic thin films and intermediate alloy layer having magnetic concentrator and shielding permeable massesNONVOLATILE ELECTRONICS INC·Filed 1995·Granted Apr 1, 1997·116 cites·16 claims
- 1193US5251170AOffset magnetoresistive memory structuresNONVOLATILE ELECTRONICS INC·Filed 1991·Granted Oct 5, 1993·92 cites·14 claims
- 1292US6963098B2Thermally operated switch control memory cellNVE CORP·Filed 2004·Granted Nov 8, 2005·63 cites·22 claims
- 1391US7148531B2Magnetoresistive memory SOI cellNVE CORP·Filed 2005·Granted Dec 12, 2006·27 cites·27 claims
- 1491US6535416B1Magnetic memory coincident thermal pulse data storageNVE CORP·Filed 2000·Granted Mar 18, 2003·71 cites·79 claims
- 1591US5424236AMethod for forming offset magnetoresistive memory structuresNONVOLATILE ELECTRONICS INC·Filed 1993·Granted Jun 13, 1995·72 cites·7 claims
- 1691US4751677ADifferential arrangement magnetic memory cellHONEYWELL INC·Filed 1986·Granted Jun 14, 1988·84 cites·9 claims
- 1791US4152714ASemiconductor apparatusHONEYWELL INC·Filed 1978·Granted May 1, 1979·44 cites·28 claims
- 1890US7177178B2magnetic memory layers thermal pulse transitionsNVE CORP·Filed 2005·Granted Feb 13, 2007·18 cites·21 claims
- 1990US6872467B2Magnetic field sensor with augmented magnetoresistive sensing layerNVE CORP·Filed 2003·Granted Mar 29, 2005·32 cites·34 claims
- 2090US6462541B1Uniform sense condition magnetic field sensor using differential magnetoresistanceNVE CORP·Filed 1999·Granted Oct 8, 2002·83 cites·25 claims
- 2189US5595830AMagnetoresistive structure with alloy layer having two substantially immiscible componentsNONVOLATILE ELECTRONICS INC·Filed 1994·Granted Jan 21, 1997·52 cites·50 claims
- 2289US5569544AMagnetoresistive structure comprising ferromagnetic thin films and intermediate layers of less than 30 angstroms formed of alloys having immiscible componentsNONVOLATILE ELECTRONICS INC·Filed 1994·Granted Oct 29, 1996·66 cites·42 claims
- 2388US6021065ASpin dependent tunneling memoryNONVOLATILE ELECTRONICS INC·Filed 1997·Granted Feb 1, 2000·76 cites·14 claims
- 2487US7468664B2Enclosure tamper detection and protectionNVE CORP·Filed 2007·Granted Dec 23, 2008·18 cites·18 claims
- 2587US6300617B1Magnetic digital signal coupler having selected/reversal directions of magnetizationNONVOLATILE ELECTRONICS INC·Filed 1999·Granted Oct 9, 2001·102 cites·41 claims
- 2683US7660081B2Superparamagnetic platelets field sensing devicesNVE CORP·Filed 2008·Granted Feb 9, 2010·6 cites·18 claims
- 2780US7557562B2Inverted magnetic isolatorNVE CORP·Filed 2005·Granted Jul 7, 2009·9 cites·21 claims
- 2879US7266013B2Magnetic memory layers thermal pulse transitionsNVE CORP·Filed 2007·Granted Sep 4, 2007·8 cites·23 claims
- 2979US7054118B2Superparamagnetic field sensing devicesNVE CORP·Filed 2003·Granted May 30, 2006·18 cites·16 claims
- 3079US6275411B1Spin dependent tunneling memoryNONVOLATILE ELECTRONICS INC·Filed 1999·Granted Aug 14, 2001·29 cites·66 claims
- 3178US7390584B2Spin dependent tunneling devices having reduced topological couplingNVE CORP·Filed 2003·Granted Jun 24, 2008·20 cites·36 claims
- 3275US6349053B1Spin dependent tunneling memoryNVE CORP·Filed 2001·Granted Feb 19, 2002·19 cites·18 claims
- 3375US6168860B1Magnetic structure with stratified layersNONVOLATILE ELECTRONICS INC·Filed 1996·Granted Jan 2, 2001·27 cites·26 claims
- 3475US4918655AMagnetic device integrated circuit interconnection systemHONEYWELL INC·Filed 1988·Granted Apr 17, 1990·31 cites·34 claims
- 3574US7437309B2Talent management system and methods for reviewing and qualifying a workforce utilizing categorized and free-form text dataCORPORATE FABLES INC·Filed 2002·Granted Oct 14, 2008·44 cites·3 claims
- 3671US4582975ACircuit chipHONEYWELL INC·Filed 1984·Granted Apr 15, 1986·30 cites·8 claims
- 3770US7023723B2Magnetic memory layers thermal pulse transitionsNVE CORP·Filed 2003·Granted Apr 4, 2006·12 cites·21 claims
- 3869US5729137AMagnetic field sensors individualized field reducersNONVOLATILE ELECTRONICS INC·Filed 1996·Granted Mar 17, 1998·32 cites·10 claims
- 3967US7952345B2Inverted magnetic isolatorNVE CORP·Filed 2009·Granted May 31, 2011·4 cites·4 claims
- 4067US7813165B2Magnetic memory layers thermal pulse transitionsNVE CORP·Filed 2007·Granted Oct 12, 2010·4 cites·9 claims
- 4166US8884606B2Inverted magnetic isolatorMYERS JOHN K·Filed 2011·Granted Nov 11, 2014·2 cites·19 claims
- 4265US6072382ASpin dependent tunneling sensorNONVOLATILE ELECTRONICS INC·Filed 1999·Granted Jun 6, 2000·41 cites·25 claims
- 4362US4044371APlurality of precise temperature resistors formed in monolithic integrated circuitsHONEYWELL INC·Filed 1976·Granted Aug 23, 1977·18 cites·6 claims
- 4460US5060193AMagnetic state entry assuranceHONEYWELL INC·Filed 1990·Granted Oct 22, 1991·20 cites·20 claims
- 4552US4506139ACircuit chipHONEYWELL INC·Filed 1983·Granted Mar 19, 1985·15 cites·8 claims
- 4648US6340886B1Magnetic field sensor with a plurality of magnetoresistive thin-film layers having an end at a common surfaceNONVOLATILE ELECTRONICS INC·Filed 1997·Granted Jan 22, 2002·13 cites·11 claims
- 4743USRE47583ECircuit selection of magnetic memory cells and related cell structuresNVE CORP·Filed 2015·Granted Aug 27, 2019·0 cites·100 claims
- 4843US2002198765A1Human capital management performance capability matching system and methodsFiled 2002·Application pending·0 cites
- 4938USRE44878ECurrent switched magnetoresistive memory cellDAUGHTON JAMES M·Filed 2012·Granted May 6, 2014·0 cites·105 claims
- 5037US4092662ASensistor apparatusHONEYWELL INC·Filed 1976·Granted May 30, 1978·5 cites·7 claims
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