Inventor · disambiguated record
Hyung-Rok Oh
Also filed as: OH HYUNG-ROK
60 granted patents·5 pending applications·1,275 citations·filing 2003–2013
99Inventor score
Top patents by PatentIndex Score
65 records- 0198US7808815B2Variable resistance memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 5, 2010·72 cites·9 claims
- 0298US7589367B2Layout structure in semiconductor memory device comprising global work lines, local work lines, global bit lines and local bit linesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 15, 2009·70 cites·16 claims
- 0398US7542356B2Semiconductor memory device and method for reducing cell activation during write operationsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 2, 2009·76 cites·18 claims
- 0498US7248494B2Semiconductor memory device capable of compensating for leakage currentSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 24, 2007·158 cites·19 claims
- 0597US9147500B2Semiconductor memory device having resistive memory cells and method of testing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Sep 29, 2015·39 cites·30 claims
- 0697US7405960B2Semiconductor memory device and method for biasing dummy line thereforSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 29, 2008·62 cites·17 claims
- 0795US8654595B2Nonvolatile memory device with a clamping voltage generation circuit for compensating the variations in memory cell parametersKIM CHAN-KYUNG·Filed 2012·Granted Feb 18, 2014·24 cites·20 claims
- 0894US7903448B2Resistance random access memory having common source lineSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 8, 2011·31 cites·9 claims
- 0994US7245526B2Phase change memory device providing compensation for leakage currentSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 17, 2007·34 cites·20 claims
- 1094US6982913B2Data read circuit for use in a semiconductor memory and a memory thereofSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jan 3, 2006·73 cites·20 claims
- 1193US7920405B2Circuits and methods for adaptive write bias driving of resistive non-volatile memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 5, 2011·34 cites·28 claims
- 1293US7548451B2Phase change random access memorySAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 16, 2009·24 cites·23 claims
- 1393US6885602B2Programming method of controlling the amount of write current applied to phase change memory device and write driver circuit thereforSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Apr 26, 2005·64 cites·26 claims
- 1492US7894236B2Nonvolatile memory devices that utilize read/write merge circuitsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Feb 22, 2011·24 cites·10 claims
- 1592US7391644B2Phase-changeable memory device and read method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 24, 2008·29 cites·22 claims
- 1691US7974115B2One-time programmable devices including chalcogenide material and electronic systems including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jul 5, 2011·23 cites·19 claims
- 1791US7688621B2Memory system, memory device and apparatus including writing driver circuit for a variable resistive memorySAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 30, 2010·26 cites·20 claims
- 1891US7012834B2Writing driver circuit of phase-change memorySAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 14, 2006·53 cites·20 claims
- 1990US6943395B2Phase random access memory with high densitySAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Sep 13, 2005·45 cites·20 claims
- 2089US9183910B2Semiconductor memory devices for alternately selecting bit linesLEE YUN-SANG·Filed 2013·Granted Nov 10, 2015·18 cites·18 claims
- 2189US7463509B2Magneto-resistive RAM having multi-bit cell array structureSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 9, 2008·19 cites·24 claims
- 2288US7436693B2Phase-change semiconductor memory device and method of programming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 14, 2008·20 cites·6 claims
- 2388US7262990B2Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 28, 2007·17 cites·14 claims
- 2486US9042152B2Data read circuit, a non-volatile memory device having the same, and a method of reading data from the non-volatile memory deviceKIM CHAN-KYUNG·Filed 2012·Granted May 26, 2015·10 cites·20 claims
- 2585US7447092B2Write driver circuit for controlling a write current applied to a phase change memory based on an ambient temperatureSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 4, 2008·15 cites·11 claims
- 2683US7304886B2Writing driver circuit of phase-change memorySAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 4, 2007·12 cites·20 claims
- 2782US7924639B2Nonvolatile memory device using resistance materialSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Apr 12, 2011·13 cites·20 claims
- 2880US7869256B2Bi-directional resistive random access memory capable of multi-decoding and method of writing data theretoSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 11, 2011·7 cites·11 claims
- 2979US8804410B2Stacked MRAM device and memory system having the sameOH HYUNG-ROK·Filed 2012·Granted Aug 12, 2014·5 cites·18 claims
- 3079US7843715B2Memory cell of a resistive semiconductor memory device, a resistive semiconductor memory device having a three-dimensional stack structure, and related methodsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Nov 30, 2010·11 cites·17 claims
- 3179US7843716B2Nonvolatile memory device having memory and reference cellsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Nov 30, 2010·11 cites·19 claims
- 3279US7817465B2Phase change random access memorySAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Oct 19, 2010·9 cites·28 claims
- 3379US7397681B2Nonvolatile memory devices having enhanced bit line and/or word line driving capabilitySAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 8, 2008·11 cites·7 claims
- 3479US7242605B2Phase-change memory device and method that maintains the resistance of a phase-change material in a reset state within a constant resistance rangeSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 10, 2007·26 cites·5 claims
- 3578US7586776B2Nonvolatile memory devices having multi-filament variable resistivity memory cells thereinSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 8, 2009·10 cites·24 claims
- 3678US7317655B2Memory cell array biasing method and a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 8, 2008·5 cites·23 claims
- 3775US7751232B2Method of testing PRAM deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 6, 2010·7 cites·15 claims
- 3873US7993961B2Layout structure in semiconductor memory device comprising global word lines, local word lines, global bit lines and local bit linesSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Aug 9, 2011·3 cites·7 claims
- 3973US7986551B2Phase change random access memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Jul 26, 2011·4 cites·5 claims
- 4069US7869271B2Method of testing PRAM deviceSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Jan 11, 2011·3 cites·4 claims
- 4168US7808811B2Resistance semiconductor memory device having three-dimensional stack and word line decoding method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Oct 5, 2010·5 cites·13 claims
- 4268US7701747B2Non-volatile memory including sub cell array and method of writing data theretoSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 20, 2010·6 cites·17 claims
- 4367US8619458B2Bidirectional resistive memory devices using selective read voltage polarityBAEK IN-GYU·Filed 2012·Granted Dec 31, 2013·3 cites·18 claims
- 4467US7245543B2Data read circuit for use in a semiconductor memory and a method thereforSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 17, 2007·5 cites·11 claims
- 4566US8745452B2Resistive memory device and test systems and methods for testing the sameOH HYUNG ROK·Filed 2012·Granted Jun 3, 2014·3 cites·17 claims
- 4666US8136017B2Multi-layer semiconductor memory device comprising error checking and correction (ECC) engine and related ECC methodOH HYUNG-ROK·Filed 2008·Granted Mar 13, 2012·6 cites·10 claims
- 4766US7710767B2Memory cell array biasing method and a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted May 4, 2010·6 cites·19 claims
- 4866US6853599B2Magnetic memory device implementing read operation tolerant to bitline clamp voltage (VREF)SAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 8, 2005·15 cites·10 claims
- 4964US7548446B2Phase change memory device and associated wordline driving circuitSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 16, 2009·5 cites·30 claims
- 5064US7436711B2Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 14, 2008·4 cites·10 claims
Showing the top 50 of 65 patent records by PatentIndex Score.
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