Inventor · disambiguated record
Roland Hampp
Also filed as: HAMPP ROLAND
15 granted patents·7 pending applications·54 citations·filing 2005–2015
91Inventor score
Files withINFINEON TECHNOLOGIES AG10HAMPP ROLAND6STAHRENBERG KNUT2INFINEON TECHNOLOGY NORTH AMER1KIM JUNJUNG1
Top patents by PatentIndex Score
22 records- 0187US8643126B2Self aligned silicided contactsHAMPP ROLAND·Filed 2012·Granted Feb 4, 2014·7 cites·26 claims
- 0282US9653543B2Methods of fabricating isolation regions of semiconductor devices and structures thereofINFINEON TECHNOLOGIES AG·Filed 2014·Granted May 16, 2017·5 cites·22 claims
- 0381US7235485B2Method of manufacturing semiconductor deviceINFINEON TECHNOLOGY NORTH AMER·Filed 2005·Granted Jun 26, 2007·17 cites·20 claims
- 0477US9006898B2Conductive lines and pads and method of manufacturing thereofINFINEON TECHNOLOGIES AG·Filed 2013·Granted Apr 14, 2015·3 cites·9 claims
- 0577US8361879B2Stress-inducing structures, methods, and materialsINFINEON TECHNOLOGIES AG·Filed 2008·Granted Jan 29, 2013·5 cites·30 claims
- 0671US8936995B2Methods of fabricating isolation regions of semiconductor devices and structures thereofTILKE ARMIN·Filed 2006·Granted Jan 20, 2015·4 cites·30 claims
- 0771US8907444B2Stress-inducing structures, methods, and materialsINFINEON TECHNOLOGIES AG·Filed 2013·Granted Dec 9, 2014·2 cites·23 claims
- 0871US8187962B2Self aligned silicided contactsHAMPP ROLAND·Filed 2010·Granted May 29, 2012·2 cites·18 claims
- 0970US8586472B2Conductive lines and pads and method of manufacturing thereofHAMPP ROLAND·Filed 2010·Granted Nov 19, 2013·2 cites·21 claims
- 1069US7795107B2Method for forming isolation structuresINFINEON TECHNOLOGIES AG·Filed 2009·Granted Sep 14, 2010·3 cites·29 claims
- 1168US8159038B2Self aligned silicided contactsHAMPP ROLAND·Filed 2008·Granted Apr 17, 2012·2 cites·23 claims
- 1264US7615840B2Device performance improvement using flowfill as material for isolation structuresINFINEON TECHNOLOGIES AG·Filed 2007·Granted Nov 10, 2009·2 cites·11 claims
- 1357US9373717B2Stress-inducing structures, methods, and materialsINFINEON TECHNOLOGIES AG·Filed 2014·Granted Jun 21, 2016·0 cites·20 claims
- 1453US7947606B2Methods of forming conductive features and structures thereofINFINEON TECHNOLOGIES AG·Filed 2008·Granted May 24, 2011·0 cites·24 claims
- 1547US7892939B2Threshold voltage consistency and effective width in same-substrate device groupsINFINEON TECHNOLOGIES AG·Filed 2008·Granted Feb 22, 2011·0 cites·19 claims
- 1647US2015194398A1Conductive Lines and Pads and Method of Manufacturing ThereofINFINEON TECHNOLOGIES AG·Filed 2015·Application pending·0 cites
- 1746US2011175148A1Methods of Forming Conductive Features and Structures ThereofYAN JIANG·Filed 2011·Application pending·0 cites
- 1843US2009218692A1Barrier for Copper Integration in the FEOLHAMPP ROLAND·Filed 2008·Application pending·0 cites
- 1941US2008311711A1Gapfill for metal contactsHAMPP ROLAND·Filed 2007·Application pending·0 cites
- 2041US2010148262A1Resistors and Methods of Manufacture ThereofSTAHRENBERG KNUT·Filed 2008·Application pending·0 cites
- 2140US2010308418A1Semiconductor Devices and Methods of Manufacture ThereofSTAHRENBERG KNUT·Filed 2009·Application pending·0 cites
- 2238US2007249128A1Ultraviolet (UV) Radiation Treatment Methods for Subatmospheric Chemical Vapor Deposition (SACVD) of Ozone-Tetraethoxysilane (O3-TEOS)KIM JUNJUNG·Filed 2006·Application pending·0 cites
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