Inventor · disambiguated record
Brent Gilgen
Also filed as: GILGEN BRENT · GILGEN BRENT D
33 granted patents·2,550 citations·filing 1991–2017
98Inventor score
Top patents by PatentIndex Score
33 records- 0199US6462353B1Method for fabricating a small area of contact between electrodesMICRON TECHNOLOGY INC·Filed 2000·Granted Oct 8, 2002·317 cites·7 claims
- 0299US6423621B2Controllable ovonic phase-change semiconductor memory device and methods of fabricating the sameMICRON TECHNOLOGY INC·Filed 2001·Granted Jul 23, 2002·369 cites·16 claims
- 0399US6287887B1Method for fabricating a small area of contact between electrodesMICRON TECHNOLOGY INC·Filed 2000·Granted Sep 11, 2001·320 cites·15 claims
- 0499US6150253AControllable ovonic phase-change semiconductor memory device and methods of fabricating the sameMICRON TECHNOLOGY INC·Filed 1997·Granted Nov 21, 2000·414 cites·9 claims
- 0599US6147395AMethod for fabricating a small area of contact between electrodesMICRON TECHNOLOGY INC·Filed 1996·Granted Nov 14, 2000·404 cites·27 claims
- 0697US9754946B1Methods of forming an elevationally extending conductor laterally between a pair of conductive linesMICRON TECHNOLOGY INC·Filed 2016·Granted Sep 5, 2017·30 cites·25 claims
- 0797US5134085AReduced-mask, split-polysilicon CMOS process, incorporating stacked-capacitor cells, for fabricating multi-megabit dynamic random access memoriesMICRON TECHNOLOGY INC·Filed 1991·Granted Jul 28, 1992·426 cites·23 claims
- 0896US6897467B2Controllable ovanic phase-change semiconductor memory deviceMICRON TECHNOLOGY INC·Filed 2003·Granted May 24, 2005·64 cites·17 claims
- 0995US6329666B1Controllable ovonic phase-change semiconductor memory device and methods of fabricating the sameMICRON TECHNOLOGY INC·Filed 2000·Granted Dec 11, 2001·62 cites·12 claims
- 1090US6294452B1Controllable ovonic phase-change semiconductor memory device and methods of fabricating the sameMICRON TECHNOLOGY INC·Filed 2000·Granted Sep 25, 2001·30 cites·6 claims
- 1189US8148775B2Methods of providing electrical isolation and semiconductor structures including sameGILGEN BRENT D·Filed 2010·Granted Apr 3, 2012·13 cites·22 claims
- 1285US6781145B2Controlable ovonic phase-change semiconductor memory deviceMICRON TECHNOLOGY INC·Filed 2002·Granted Aug 24, 2004·19 cites·17 claims
- 1384US7545009B2Word lines for memory cellsMICRON TECHNOLOGY INC·Filed 2005·Granted Jun 9, 2009·6 cites·28 claims
- 1481US8105956B2Methods of forming silicon oxides and methods of forming interlevel dielectricsHO YUNJUN·Filed 2009·Granted Jan 31, 2012·8 cites·36 claims
- 1581US6688584B2Compound structure for reduced contact resistanceMICRON TECHNOLOGY INC·Filed 2001·Granted Feb 10, 2004·17 cites·88 claims
- 1673US8957483B2Electrically conductive lines and integrated circuitry comprising a line of recessed access devicesMICRON TECHNOLOGY INC·Filed 2013·Granted Feb 17, 2015·2 cites·25 claims
- 1772US7109115B2Methods of providing ohmic contactMICRON TECHNOLOGY INC·Filed 2005·Granted Sep 19, 2006·2 cites·24 claims
- 1871US9589962B2Array of conductive vias, methods of forming a memory array, and methods of forming conductive viasMICRON TECHNOLOGY INC·Filed 2014·Granted Mar 7, 2017·2 cites·30 claims
- 1970US7038318B2Compound structure for reduced contact resistanceMICRON TECHNOLOGY INC·Filed 2003·Granted May 2, 2006·8 cites·35 claims
- 2068US7115970B2Capacitor for use in an integrated circuitMICRON TECHNOLOGY INC·Filed 2004·Granted Oct 3, 2006·11 cites·27 claims
- 2167US7935950B2Controllable ovonic phase-change semiconductor memory device and methods of programming the sameROUND ROCK RES LLC·Filed 2007·Granted May 3, 2011·1 cites·17 claims
- 2265US7037829B2Compound structure for reduced contact resistanceMICRON TECHNOLOGY INC·Filed 2003·Granted May 2, 2006·6 cites·34 claims
- 2365US6888217B2Capacitor for use in an integrated circuitMICRON TECHNOLOGY INC·Filed 2001·Granted May 3, 2005·10 cites·63 claims
- 2458US6893958B2Methods for preventing cross-linking between multiple resists and patterning multiple resistsMICRON TECHNOLOGY INC·Filed 2002·Granted May 17, 2005·4 cites·49 claims
- 2557US6825107B2Method for fabricating a memory chipMICRON TECHNOLOGY INC·Filed 2001·Granted Nov 30, 2004·3 cites·6 claims
- 2653US7211855B2Intermediate semiconductor device structure including multiple photoresist layersMICRON TECHNOLOGY INC·Filed 2006·Granted May 1, 2007·0 cites·25 claims
- 2752US9171750B2Methods of forming electrically conductive linesMICRON TECHNOLOGY INC·Filed 2015·Granted Oct 27, 2015·0 cites·20 claims
- 2852US7078760B2Intermediate semiconductor device structure including multiple photoresist layersMICRON TECHNOLOGY INC·Filed 2004·Granted Jul 18, 2006·2 cites·27 claims
- 2951US10134741B2Methods of forming an elevationally extending conductor laterally between a pair of conductive linesMICRON TECHNOLOGY INC·Filed 2017·Granted Nov 20, 2018·0 cites·21 claims
- 3051US9812455B2Array of conductive vias, methods of forming a memory array, and methods of forming conductive viasMICRON TECHNOLOGY INC·Filed 2016·Granted Nov 7, 2017·0 cites·17 claims
- 3148US8450218B2Methods of forming silicon oxides and methods of forming interlevel dielectricsHO YUNJUN·Filed 2011·Granted May 28, 2013·0 cites·26 claims
- 3243US8470654B2Methods of forming an electrically conductive buried line and an electrical contact thereto and methods of forming a buried access line and an electrical contact theretoGILGEN BRENT·Filed 2010·Granted Jun 25, 2013·0 cites·12 claims
- 3341US7253430B2Controllable ovonic phase-change semiconductor memory deviceMICRON TECHNOLOGY INC·Filed 2003·Granted Aug 7, 2007·0 cites·56 claims
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