Inventor · disambiguated record
Jian-Shiou Huang
Also filed as: HUANG JIAN · HUANG JIAN-SHIOU
17 granted patents·13 pending applications·61 citations·filing 2014–2025
91Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD16BTR NEW MAT GROUP CO LTD8GIGA SOLAR MAT CORP3KAIFENG RUIFENG NEW MAT CO LTD3
Top patents by PatentIndex Score
30 records- 0196US9257642B1Protective sidewall techniques for RRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 9, 2016·18 cites·19 claims
- 0294US9761799B2Bottom electrode structure for improved electric field uniformityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 12, 2017·10 cites·20 claims
- 0394US9502649B2Bottom electrode structure for improved electric field uniformityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 22, 2016·10 cites·20 claims
- 0490US9825117B2MIM/RRAM structure with improved capacitance and reduced leakage currentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 21, 2017·5 cites·20 claims
- 0586US9450183B2Memory structure having top electrode with protrusionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 20, 2016·5 cites·20 claims
- 0682US9543375B2MIM/RRAM structure with improved capacitance and reduced leakage currentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 10, 2017·4 cites·20 claims
- 0780US10468409B2FinFET device with oxidation-resist STI liner structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 5, 2019·3 cites·20 claims
- 0880US10361113B2Formation and in-situ treatment processes for gap fill layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 23, 2019·2 cites·20 claims
- 0974US9887134B2Semiconductor devices, methods of manufacture thereof, and methods of singulating semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 6, 2018·2 cites·20 claims
- 1073US2025391864A1Anode material and batteryBTR NEW MAT GROUP CO LTD·Filed 2025·Application pending·0 cites
- 1173US2025329737A1Anode material and batteryBTR NEW MAT GROUP CO LTD·Filed 2025·Application pending·0 cites
- 1273US2025329713A1Anode material and batteryBTR NEW MAT GROUP CO LTD·Filed 2025·Application pending·0 cites
- 1373US2025391862A1Anode material and batteryBTR NEW MAT GROUP CO LTD·Filed 2025·Application pending·0 cites
- 1472US12506151B2Anode material and batteryBTR NEW MAT GROUP CO LTD·Filed 2023·Granted Dec 23, 2025·0 cites·9 claims
- 1572US9425061B2Buffer cap layer to improve MIM structure performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 23, 2016·2 cites·20 claims
- 1664US12336201B2Capacitor structure and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 17, 2025·0 cites·20 claims
- 1763US2025226408A1Anode material and batteryBTR NEW MAT GROUP CO LTD·Filed 2023·Application pending·0 cites
- 1863US2025233149A1Anode material and batteryBTR NEW MAT GROUP CO LTD·Filed 2023·Application pending·0 cites
- 1960US10937686B2Formation and in-situ treatment processes for gap fill layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 2, 2021·0 cites·20 claims
- 2060US2025132336A1Anode material and batteryKAIFENG RUIFENG NEW MAT CO LTD·Filed 2022·Application pending·0 cites
- 2160US2025125357A1Anode material and batteryKAIFENG RUIFENG NEW MAT CO LTD·Filed 2022·Application pending·0 cites
- 2259US2025391863A1Anode material and batteryBTR NEW MAT GROUP CO LTD·Filed 2025·Application pending·0 cites
- 2356US10978305B2Manufacturing method for a film stack of a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 13, 2021·0 cites·20 claims
- 2455US2025246625A1Anode material and batteryKAIFENG RUIFENG NEW MAT CO LTD·Filed 2022·Application pending·0 cites
- 2551US2021020905A1Lithium ion battery silicon carbon electrode material and preparation method thereofGIGA SOLAR MAT CORP·Filed 2020·Application pending·0 cites
- 2651US2021020909A1Electrode material and preparation method thereofGIGA SOLAR MAT CORP·Filed 2020·Application pending·0 cites
- 2750US11038010B2Capacitor structure and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jun 15, 2021·0 cites·20 claims
- 2849US10176999B2Semiconductor device having a multi-layer, metal-containing filmTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 8, 2019·0 cites·20 claims
- 2946US2021020934A1Positive and negative electrode material and preparation method thereofGIGA SOLAR MAT CORP·Filed 2020·Application pending·0 cites
- 3044US10629497B2FinFET device structure and method for enlarging gap-fill windowTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 21, 2020·0 cites·20 claims
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