Inventor · disambiguated record
Tae-Won Ha
Also filed as: HA TAE-WON
19 granted patents·4 pending applications·98 citations·filing 2013–2020
94Inventor score
Top patents by PatentIndex Score
23 records- 0197US9240411B1Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jan 19, 2016·14 cites·30 claims
- 0296US9698264B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 4, 2017·12 cites·19 claims
- 0396US9515182B2High-integration semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Dec 6, 2016·11 cites·29 claims
- 0496US9461173B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Oct 4, 2016·10 cites·20 claims
- 0596US9048219B2High integration semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jun 2, 2015·20 cites·30 claims
- 0695US9502417B2Semiconductor device having a substrate including a first active region and a second active regionSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 22, 2016·8 cites·30 claims
- 0794US10084088B2Method for fabricating a semiconductor device having a first fin active pattern and a second fin active patternSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Sep 25, 2018·7 cites·17 claims
- 0891US9209184B2High-integration semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Dec 8, 2015·5 cites·20 claims
- 0990US10177253B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jan 8, 2019·6 cites·20 claims
- 1081US10692781B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jun 23, 2020·3 cites·18 claims
- 1174US11581435B2Semiconductor device including a first fin active region, a second fin active region and a field regionSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Feb 14, 2023·0 cites·19 claims
- 1267US9972544B2Semiconductor device with conductive pattern on insulating line pattern on spacer on field insulating film in trench between fin patternsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 15, 2018·1 cites·20 claims
- 1366US10714614B2Semiconductor device including a first fin active region and a second fin active regionSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jul 14, 2020·0 cites·19 claims
- 1459US9099336B2Semiconductor device and fabricating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Aug 4, 2015·1 cites·15 claims
- 1556US10778134B2Apparatus and method for controlling inverter for driving motorHYUNDAI MOTOR CO LTD·Filed 2018·Granted Sep 15, 2020·0 cites·16 claims
- 1656US10580891B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Mar 3, 2020·0 cites·14 claims
- 1748US10630217B2Apparatus and method for controlling inverter for driving motorHYUNDAI MOTOR CO LTD·Filed 2018·Granted Apr 21, 2020·0 cites·12 claims
- 1848US2014001543A1Integrated circuit device with metal gates including diffusion barrier layers and fabricating methods thereofKIM JU YOUN·Filed 2013·Application pending·0 cites
- 1947US2015357427A1Integrated Circuit Device with Metal Gates Including Diffusion Barrier Layers and Fabricating Methods ThereofKIM JU-YOUN·Filed 2015·Application pending·0 cites
- 2041US2014370699A1Method for fabricating semiconductor deviceKIM JU-YOUN·Filed 2013·Application pending·0 cites
- 2136US10553693B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Feb 4, 2020·0 cites·17 claims
- 2235US9812367B2Method for fabricating semiconductor device including replacement process of forming at least one metal gate structureKIM JU-YOUN·Filed 2015·Granted Nov 7, 2017·0 cites·19 claims
- 2335US2017117192A1Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Application pending·0 cites
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