Inventor · disambiguated record
Byoung-Kwan Ahn
Also filed as: AHN BYOUNG-KWAN
2 granted patents·10 citations·filing 2000–2003
54Inventor score
Technology areasH10P
Files withHYUNDAI ELECTRONICS IND2
Top patents by PatentIndex Score
2 records- 0162US6690052B2Semiconductor device having a capacitor with a multi-layer dielectricHYUNDAI ELECTRONICS IND·Filed 2000·Granted Feb 10, 2004·9 cites·8 claims
- 0243US7012001B2Method for manufacturing a semiconductor device for use in a memory cell that includes forming a composite layer of tantalum oxide and titanium oxide over a bottom capacitor electrodeHYUNDAI ELECTRONICS IND·Filed 2003·Granted Mar 14, 2006·1 cites·17 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →