Inventor · disambiguated record
Hee-Ju Shin
Also filed as: SHIN HEE-JU
22 granted patents·9 pending applications·185 citations·filing 2007–2023
94Inventor score
Top patents by PatentIndex Score
31 records- 0196US8803265B2Magnetic memory layer and magnetic memory device including the sameLIM WOO-CHANG·Filed 2011·Granted Aug 12, 2014·46 cites·20 claims
- 0296US8334148B2Methods of forming pattern structuresJEONG JUN-HO·Filed 2011·Granted Dec 18, 2012·59 cites·13 claims
- 0389US8796042B2Method for forming magnetic tunnel junction structure and method for forming magnetic random access memory using the sameSHIN HEE-JU·Filed 2011·Granted Aug 5, 2014·18 cites·17 claims
- 0488US8625325B2Memory cells including resistance variable material patterns of different compositionsAN HYEONG-GEUN·Filed 2010·Granted Jan 7, 2014·13 cites·20 claims
- 0583US10128312B2Non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Nov 13, 2018·4 cites·20 claims
- 0683US8445354B2Methods for manufacturing a phase-change memory deviceHA YONG-HO·Filed 2012·Granted May 21, 2013·5 cites·11 claims
- 0783US7791932B2Phase-change material layer and phase-change memory device including the phase-change material layerSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 7, 2010·11 cites·25 claims
- 0879US8012789B2Nonvolatile memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 6, 2011·6 cites·13 claims
- 0979US7563639B2Phase-changeable memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 21, 2009·10 cites·19 claims
- 1078US9178135B2Magnetic deviceKIM YOUNG-HYUN·Filed 2014·Granted Nov 3, 2015·5 cites·19 claims
- 1175US11725271B2Sputtering apparatus and method for fabricating semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 15, 2023·0 cites·10 claims
- 1272US7727458B2Method of forming a chalcogenide compound targetSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 1, 2010·2 cites·17 claims
- 1370US9087977B2Semiconductor device having pinned layer with enhanced thermal endurancePARK JEONG-HEON·Filed 2014·Granted Jul 21, 2015·2 cites·20 claims
- 1468US11339467B2Sputtering apparatus and method for fabricating semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 24, 2022·0 cites·20 claims
- 1564US10825497B2Semiconductor device including spin-orbit torque line and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Nov 3, 2020·1 cites·20 claims
- 1663US11176982B2Semiconductor device including spin-orbit torque line and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Nov 16, 2021·0 cites·14 claims
- 1762US11004900B2Magnetoresistive random access memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted May 11, 2021·1 cites·20 claims
- 1861US8222625B2Non-volatile memory device including phase-change materialAHN DONG-HO·Filed 2010·Granted Jul 17, 2012·1 cites·4 claims
- 1954US11735241B2Magnetic memory device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Aug 22, 2023·0 cites·20 claims
- 2054US8133429B2Methods for manufacturing a phase-change memory deviceHA YONG-HO·Filed 2010·Granted Mar 13, 2012·1 cites·32 claims
- 2151US12402430B2Image sensorSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 26, 2025·0 cites·18 claims
- 2250US9666789B2Semiconductor device having pinned layer with enhanced thermal enduranceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted May 30, 2017·0 cites·17 claims
- 2350US2024284802A1Magnetic memory device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2445US2011315946A1Nonvolatile memory deviceKO HAN-BONG·Filed 2011·Application pending·0 cites
- 2545US2009035514A1Phase change memory device and method of fabricating the sameKANG MYUNG-JIN·Filed 2008·Application pending·0 cites
- 2639US2011031461A1Phase change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2010·Application pending·0 cites
- 2739US2008075843A1Method of Forming a Phase-Change Memory Unit and Method of Manufacturing a Phase-Change Memory Device Using the SameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 2836US2009057644A1Phase-change memory units, methods of forming the phase-change memory units, phase-change memory devices having the phase-change memory units and methods of manufacturung the phase-change memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 2935US2009278107A1Phase change memory deviceKIM DO-HYUNG·Filed 2009·Application pending·0 cites
- 3034US2013171743A1Magnetic device and method of manufacturing the sameLEE JANG-EUN·Filed 2012·Application pending·0 cites
- 3133US2012032135A1Phase-Change Memory Units and Phase-Change Memory Devices Using the SameKUH BONG-JIN·Filed 2011·Application pending·0 cites
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