Inventor · disambiguated record
Doo Hyeb Youn
Also filed as: YOUN DOO H · YOUN DOO HYEB
18 granted patents·11 pending applications·84 citations·filing 2003–2018
92Inventor score
Files withKOREA ELECTRONICS TELECOMM20ELECTRONICS & TELECOMMUNICATIONS RES INST5KIM HYUN T1KIM HYUN TAK1KIM SEONG-HYUN1
Top patents by PatentIndex Score
29 records- 0188US10240256B2Electro spinning apparatusELECTRONICS & TELECOMMUNICATIONS RES INST·Filed 2017·Granted Mar 26, 2019·1 cites·20 claims
- 0285US10138513B2Method and device for amplifying and detecting gene using graphene heaterELECTRONICS & TELECOMMUNICATIONS RES INST·Filed 2014·Granted Nov 27, 2018·5 cites·17 claims
- 0385US9178032B2Gas sensor and manufacturing method thereofKOREA ELECTRONICS TELECOMM·Filed 2014·Granted Nov 3, 2015·8 cites·20 claims
- 0483US9023166B2Method of transferring grapheneKOREA ELECTRONICS TELECOMM·Filed 2013·Granted May 5, 2015·3 cites·6 claims
- 0578US6933553B2Field effect transistor using vanadium dioxide layer as channel material and method of manufacturing the field effect transistorKOREA ELECTRONICS TELECOMM·Filed 2003·Granted Aug 23, 2005·20 cites·9 claims
- 0673US8890197B2Light emitting diodes and methods of fabricating the sameKOREA ELECTRONICS TELECOMM·Filed 2013·Granted Nov 18, 2014·3 cites·7 claims
- 0772US8017268B2Lithium secondary battery including discharge unitKOREA ELECTRONICS TELECOMM·Filed 2006·Granted Sep 13, 2011·2 cites·15 claims
- 0872US7863085B2Organic thin film transistor, method of manufacturing the same, and biosensor using the transistorKOREA ELECTRONICS TELECOMM·Filed 2008·Granted Jan 4, 2011·3 cites·4 claims
- 0969US6987290B2Current-jump-control circuit including abrupt metal-insulator phase transition deviceKOREA ELECTRONICS TELECOMM·Filed 2004·Granted Jan 17, 2006·16 cites·9 claims
- 1065US7728327B22-terminal semiconductor device using abrupt metal-insulator transition semiconductor materialKOREA ELECTRONICS TELECOMM·Filed 2004·Granted Jun 1, 2010·9 cites·4 claims
- 1163US9257610B2Light emitting diode and manufacturing method thereofKOREA ELECTRONICS TELECOMM·Filed 2014·Granted Feb 9, 2016·0 cites·5 claims
- 1261US7684023B2Apparatus and method for generating THz wave by heterodyning optical and electrical wavesKOREA ELECTRONICS TELECOMM·Filed 2007·Granted Mar 23, 2010·3 cites·9 claims
- 1360US7767501B2Devices using abrupt metal-insulator transition layer and method of fabricating the deviceKOREA ELECTRONICS TELECOMM·Filed 2005·Granted Aug 3, 2010·2 cites·20 claims
- 1459US6864510B2Nitride semiconductor field effect transistor (FET) and method of fabricating the sameKOREA ELECTRONICS TELECOMM·Filed 2003·Granted Mar 8, 2005·9 cites·9 claims
- 1555US10545114B2Chemical sensor and a method for manufacturing the sameELECTRONICS & TELECOMMUNICATIONS RES INST·Filed 2018·Granted Jan 28, 2020·0 cites·13 claims
- 1655US2016099386A1Light emitting diode and manufacturing method thereofKOREA ELECTRONICS TELECOMM·Filed 2015·Application pending·0 cites
- 1752US2014287414A1System and method for analyzing dna using application of mobile deviceKOREA ELECTRONICS TELECOMM·Filed 2013·Application pending·0 cites
- 1851US2010135854A1Biosensor having transistor structure and method of fabricating the sameKOREA ELECTRONICS TELECOMM·Filed 2009·Application pending·0 cites
- 1949US9275860B2Method of manufacturing a junction electronic device having a 2-dimensional material as a channelKOREA ELECTRONICS TELECOMM·Filed 2014·Granted Mar 1, 2016·0 cites·6 claims
- 2049US8673403B2Method for forming fine pattern of polymer thin filmKIM SEONG HYUN·Filed 2009·Granted Mar 18, 2014·0 cites·12 claims
- 2148US2014178598A1Method for forming graphene patternKOREA ELECTRONICS TELECOMM·Filed 2013·Application pending·0 cites
- 2247US2010193824A12-terminal semiconductor device using abrupt metal-insulator transition semiconductor materialKIM HYUN TAK·Filed 2010·Application pending·0 cites
- 2346US10361313B2Electronic device and methods of fabricating the sameELECTRONICS & TELECOMMUNICATIONS RES INST·Filed 2017·Granted Jul 23, 2019·0 cites·9 claims
- 2444US2008121946A1Method of forming sensor for detecting gases and biochemical materials, integrated circuit having the sensor, and method of manufacturing the integrated circuitYOUN DOO HYEB·Filed 2007·Application pending·0 cites
- 2543US2015200031A1Method of fabricating nanowire and graphene-sheet hybrid structure and transparent electrode using the sameKOREA ELECTRONICS TELECOMM·Filed 2014·Application pending·0 cites
- 2639US2010134936A1Circuit for protecting electrical and/or electronic system by using abrupt metal-insulator transition device and electrical and/or electronic system comprising the circuitKOREA ELECTRONICS TELECOMM·Filed 2006·Application pending·0 cites
- 2738US2013041434A1Pad for thermotheraphyKOREA ELECTRONICS TELECOMM·Filed 2012·Application pending·0 cites
- 2837US2017171965A1Stretchable electronic device and method of fabricating the sameELECTRONICS & TELECOMMUNICATIONS RES INST·Filed 2016·Application pending·0 cites
- 2935US2006231872A1Field effect transistor using insulator-semiconductor transition material layer as channel material and method of manufacturing the sameKIM HYUN T·Filed 2003·Application pending·0 cites
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