Inventor · disambiguated record
Wen-Yin Weng
Also filed as: WENG WEN · WENG WEN-YIN
6 granted patents·3 pending applications·8 citations·filing 2014–2021
72Inventor score
Files withUNITED MICROELECTRONICS CORP6FUJIAN INSTITUTE OF RES ON THE STRUCTURE OF MATTER CHINESE ACADEMY OF SCIENCE3
Top patents by PatentIndex Score
9 records- 0184US9508799B2Substrate of semiconductor device including epitaxial layer and silicon layer having same crystalline orientationUNITED MICROELECTRONICS CORP·Filed 2014·Granted Nov 29, 2016·6 cites·6 claims
- 0264US9929154B2Fin shape structureUNITED MICROELECTRONICS CORP·Filed 2014·Granted Mar 27, 2018·1 cites·12 claims
- 0354US11123920B23D printing apparatus and methodFUJIAN INSTITUTE OF RES ON THE STRUCTURE OF MATTER CHINESE ACADEMY OF SCIENCE·Filed 2016·Granted Sep 21, 2021·1 cites·11 claims
- 0451US10312235B2Method of forming fin shape structure having different buffer layersUNITED MICROELECTRONICS CORP·Filed 2018·Granted Jun 4, 2019·0 cites·5 claims
- 0551US2021291451A1Semi-permeable element, use thereof and preparation method therefor and 3d printing deviceFUJIAN INSTITUTE OF RES ON THE STRUCTURE OF MATTER CHINESE ACADEMY OF SCIENCE·Filed 2021·Application pending·0 cites
- 0650US9793296B2Method for fabricating substrate of semiconductor device including epitaxial layer and silicon layer having same crystalline orientationUNITED MICROELECTRONICS CORP·Filed 2016·Granted Oct 17, 2017·0 cites·9 claims
- 0743US9299839B2PFET and CMOS containing sameUNITED MICROELECTRONICS CORP·Filed 2014·Granted Mar 29, 2016·0 cites·3 claims
- 0843US2016003888A1Method of characterizing a deviceUNITED MICROELECTRONICS CORP·Filed 2014·Application pending·0 cites
- 0942US2019016051A1Semi-permeable element, use thereof and preparation method therefor and 3d printing deviceFUJIAN INSTITUTE OF RES ON THE STRUCTURE OF MATTER CHINESE ACADEMY OF SCIENCE·Filed 2016·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →