Inventor · disambiguated record
Hun-Hyeoung Leam
Also filed as: LEAM HUN-HYEOUNG
24 granted patents·6 pending applications·68 citations·filing 2003–2016
95Inventor score
Top patents by PatentIndex Score
30 records- 0193US9595612B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Mar 14, 2017·5 cites·30 claims
- 0288US9263588B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Feb 16, 2016·3 cites·25 claims
- 0386US8519465B2Semiconductor device and method of fabricating the sameKIM JUNG-HWAN·Filed 2012·Granted Aug 27, 2013·4 cites·20 claims
- 0486US8247859B2Semiconductor device and method of fabricating the sameKIM JUNG-HWAN·Filed 2011·Granted Aug 21, 2012·4 cites·18 claims
- 0583US7524747B2Floating gate memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 28, 2009·7 cites·12 claims
- 0680US8969939B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Mar 3, 2015·2 cites·20 claims
- 0780US7410869B2Method of manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 12, 2008·7 cites·14 claims
- 0879US7928495B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Apr 19, 2011·2 cites·3 claims
- 0979US7833875B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 16, 2010·3 cites·18 claims
- 1075US8008214B2Method of forming an insulation structure and method of manufacturing a semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 30, 2011·4 cites·14 claims
- 1171US7736963B2Method of forming a gate structure for a semiconductor device and method of forming a cell gate structure for a non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 15, 2010·5 cites·17 claims
- 1268US7902059B2Methods of forming void-free layers in openings of semiconductor substratesSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Mar 8, 2011·3 cites·23 claims
- 1368US7521375B2Method of forming an oxinitride layerSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 21, 2009·2 cites·23 claims
- 1466US7223657B2Methods of fabricating flash memory devices with floating gates that have reduced seamsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 29, 2007·3 cites·21 claims
- 1564US9847422B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Dec 19, 2017·0 cites·19 claims
- 1664US9184232B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Nov 10, 2015·0 cites·20 claims
- 1764US7189661B2Method of forming silicon oxynitride layer in semiconductor device and apparatus of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 13, 2007·2 cites·14 claims
- 1864US7041558B2Floating gate memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted May 9, 2006·7 cites·19 claims
- 1952US7459364B2Methods of forming self-aligned floating gates using multi-etchingSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 2, 2008·4 cites·14 claims
- 2048US8481387B2Method of forming an insulation structure and method of manufacturing a semiconductor device using the sameJEE JUNG-GEUN·Filed 2011·Granted Jul 9, 2013·0 cites·4 claims
- 2146US7629217B2Methods of forming void-free layers in openings of semiconductor substratesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 8, 2009·0 cites·25 claims
- 2246US7160776B2Methods of forming a gate structure of a non-volatile memory device and apparatus for performing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 9, 2007·0 cites·18 claims
- 2345US7101803B2Method of trench isolation and method for manufacturing a non-volatile memory device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Sep 5, 2006·1 cites·21 claims
- 2444US7297620B2Method of forming an oxide layer including increasing the temperature during oxidationSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 20, 2007·0 cites·24 claims
- 2543US2005153518A1Method for forming capacitor using etching stopper film in semiconductor memorySAMSUNG ELECTRONICS CO LTD·Filed 2004·Application pending·0 cites
- 2641US2006134925A1Method of forming a gate insulating layer of a semiconductor device using deuterium gasLEE JAI-DONG·Filed 2005·Application pending·0 cites
- 2739US2005266640A1Method of forming a dielectric layer and method of manufacturing a nonvolatile memory device using the sameYOU YOUNG-SUB·Filed 2005·Application pending·0 cites
- 2839US2005101143A1Methods of fabricating a semiconductor device and forming a trench region in a semiconductor deviceFiled 2004·Application pending·0 cites
- 2938US2007022941A1Method of forming a layer and method of manufacturing a semiconductor device using the samePARK JAE-YOUNG·Filed 2006·Application pending·0 cites
- 3038US2005153513A1Method of forming a dielectric layer for a non-volatile memory cell and method of forming a non-volatile memory cell having the dielectric layerFiled 2004·Application pending·0 cites
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