Inventor · disambiguated record
Jong Yul Park
Also filed as: PARK JONG YUL
8 granted patents·85 citations·filing 2000–2022
83Inventor score
Files withSAMSUNG ELECTRONICS CO LTD4ELECTRONICS & TELECOMMUNICATIONS RES INST1ULSAN NAT INST SCIENCE & TECH UNIST1UNIST (ULSAN NAT INST OF SCIENCE AND TECHNOLOGY)1UNIST(ULSAN NAT INSTITUTE OF SCIENCE AND TECHNOLOGY)1
Top patents by PatentIndex Score
8 records- 0186US6275437B1Refresh-type memory with zero write recovery time and no maximum cycle timeSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Aug 14, 2001·45 cites·28 claims
- 0278US6463002B2Refresh-type memory with zero write recovery time and no maximum cycle timeSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Oct 8, 2002·24 cites·7 claims
- 0369US9869711B2Method for evaluating performance of plasma wave transistorUNIST (ULSAN NAT INSTITUTE OF SCIENCE AND TECHNOLOGY)·Filed 2014·Granted Jan 16, 2018·2 cites·10 claims
- 0462US11817826B2Frequency mixer including non-linear circuitELECTRONICS & TELECOMMUNICATIONS RES INST·Filed 2022·Granted Nov 14, 2023·0 cites·16 claims
- 0559US6510094B2Method and apparatus for refreshing semiconductor memorySAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jan 21, 2003·12 cites·20 claims
- 0645US10684320B2Performance evaluation method of suspended channel plasma wave transistorULSAN NAT INST SCIENCE & TECH UNIST·Filed 2015·Granted Jun 16, 2020·0 cites·4 claims
- 0743US9780198B2Method for manufacturing high-performance and low-power field effect transistor of which surface roughness scattering is minimized or removedUNIST (ULSAN NAT INST OF SCIENCE AND TECHNOLOGY)·Filed 2014·Granted Oct 3, 2017·0 cites·4 claims
- 0838US6473353B2Refresh method capable of reducing memory cell access time in semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Oct 29, 2002·2 cites·13 claims
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