Inventor · disambiguated record
Jong-Jib Kim
Also filed as: KIM JONG-JIB
5 granted patents·104 citations·filing 2001–2006
79Inventor score
Files withFAIRCHILD KR SEMICONDUCTOR LTD5
Top patents by PatentIndex Score
5 records- 0191US6909143B2Lateral double-diffused MOS transistor having multiple current paths for high breakdown voltage and low on-resistanceFAIRCHILD KR SEMICONDUCTOR LTD·Filed 2004·Granted Jun 21, 2005·73 cites·9 claims
- 0265US6600206B2High voltage semiconductor device having high breakdown voltage isolation regionFAIRCHILD KR SEMICONDUCTOR LTD·Filed 2002·Granted Jul 29, 2003·15 cites·10 claims
- 0355US6486512B2Power semiconductor device having high breakdown voltage and method for fabricating the sameFAIRCHILD KR SEMICONDUCTOR LTD·Filed 2001·Granted Nov 26, 2002·10 cites·4 claims
- 0453US6995453B2High voltage integrated circuit including bipolar transistor within high voltage island areaFAIRCHILD KR SEMICONDUCTOR LTD·Filed 2002·Granted Feb 7, 2006·6 cites·11 claims
- 0539US7888768B2Power integrated circuit device having embedded high-side power switchFAIRCHILD KR SEMICONDUCTOR LTD·Filed 2006·Granted Feb 15, 2011·0 cites·12 claims
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