Inventor · disambiguated record
Chang-Ki Jeon
Also filed as: JEON CHANG-KI
31 granted patents·2 pending applications·551 citations·filing 1996–2016
97Inventor score
Files withFAIRCHILD KR SEMICONDUCTOR LTD20SAMSUNG ELECTRONICS CO LTD6CHOI YONG-CHEOL2PARK JONG-HO2CHOI YONGCHEOL1
Top patents by PatentIndex Score
33 records- 0192US7804150B2Lateral trench gate FET with direct source-drain current pathFAIRCHILD SEMICONDUCTOR·Filed 2006·Granted Sep 28, 2010·17 cites·29 claims
- 0292US6489652B1Trench DMOS device having a high breakdown resistanceFAIRCHILD KR SEMICONDUCTOR LTD·Filed 1996·Granted Dec 3, 2002·106 cites·8 claims
- 0391US6909143B2Lateral double-diffused MOS transistor having multiple current paths for high breakdown voltage and low on-resistanceFAIRCHILD KR SEMICONDUCTOR LTD·Filed 2004·Granted Jun 21, 2005·73 cites·9 claims
- 0491US6833585B2High voltage lateral DMOS transistor having low on-resistance and high breakdown voltageFAIRCHILD KR SEMICONDUCTOR LTD·Filed 2002·Granted Dec 21, 2004·62 cites·13 claims
- 0584US8217487B2Power semiconductor deviceCHOI YONGCHEOL·Filed 2010·Granted Jul 10, 2012·15 cites·23 claims
- 0683US7605040B2Method of forming high breakdown voltage low on-resistance lateral DMOS transistorFAIRCHILD KR SEMICONDUCTOR LTD·Filed 2007·Granted Oct 20, 2009·9 cites·10 claims
- 0782US7265416B2High breakdown voltage low on-resistance lateral DMOS transistorFAIRCHILD KR SEMICONDUCTOR LTD·Filed 2003·Granted Sep 4, 2007·28 cites·19 claims
- 0879US6888210B2Lateral DMOS transistor having reduced surface fieldFAIRCHILD KR SEMICONDUCTOR LTD·Filed 2003·Granted May 3, 2005·24 cites·13 claims
- 0979US6268626B1DMOS field effect transistor with improved electrical characteristics and method for manufacturing the sameFAIRCHILD KR SEMICONDUCTOR LTD·Filed 2000·Granted Jul 31, 2001·25 cites·12 claims
- 1078US7655979B2High voltage gate driver integrated circuit including high voltage junction capacitor and high voltage LDMOS transistorFAIRCHILD KR SEMICONDUCTOR LTD·Filed 2007·Granted Feb 2, 2010·8 cites·6 claims
- 1178US5918114AMethod of forming vertical trench-gate semiconductor devices having self-aligned source and body regionsSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Jun 29, 1999·44 cites·20 claims
- 1273US7777524B2High voltage semiconductor device having shifters and method of fabricating the sameFAIRCHILD KR SEMICONDUCTOR LTD·Filed 2009·Granted Aug 17, 2010·5 cites·21 claims
- 1373US7518209B2Isolation of a high-voltage diode between a high-voltage region and a low-voltage region of an integrated circuitFAIRCHILD KR SEMICONDUCTOR LTD·Filed 2006·Granted Apr 14, 2009·6 cites·5 claims
- 1473US7309894B2High voltage gate driver integrated circuit including high voltage junction capacitor and high voltage LDMOS transistorFAIRCHILD KR SEMICONDUCTOR LTD·Filed 2005·Granted Dec 18, 2007·5 cites·5 claims
- 1568US5970356AMethod for fabricating a bipolar transistorSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Oct 19, 1999·24 cites·6 claims
- 1666US6218725B1Bipolar transistors with isolation trenches to reduce collector resistanceSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Apr 17, 2001·21 cites·6 claims
- 1765US8557674B2High voltage semiconductor device including field shaping layer and method of fabricating the sameFAIRCHILD KR SEMICONDUCTOR LTD·Filed 2013·Granted Oct 15, 2013·1 cites·7 claims
- 1865US6600206B2High voltage semiconductor device having high breakdown voltage isolation regionFAIRCHILD KR SEMICONDUCTOR LTD·Filed 2002·Granted Jul 29, 2003·15 cites·10 claims
- 1962US5913114AMethod of manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Jun 15, 1999·21 cites·10 claims
- 2061US8399923B2High voltage semiconductor device including field shaping layer and method of fabricating the sameCHOI YONG-CHEOL·Filed 2009·Granted Mar 19, 2013·1 cites·11 claims
- 2158US8072029B2High voltage semiconductor device with floating regions for reducing electric field concentrationCHOI YONG-CHEOL·Filed 2008·Granted Dec 6, 2011·2 cites·22 claims
- 2255US6486512B2Power semiconductor device having high breakdown voltage and method for fabricating the sameFAIRCHILD KR SEMICONDUCTOR LTD·Filed 2001·Granted Nov 26, 2002·10 cites·4 claims
- 2353US6995453B2High voltage integrated circuit including bipolar transistor within high voltage island areaFAIRCHILD KR SEMICONDUCTOR LTD·Filed 2002·Granted Feb 7, 2006·6 cites·11 claims
- 2450US7906828B2High-voltage integrated circuit device including high-voltage resistant diodeFAIRCHILD KR SEMICONDUCTOR LTD·Filed 2009·Granted Mar 15, 2011·1 cites·5 claims
- 2549US7803676B2Semiconductor device and method of fabricating the sameFAIRCHILD KR SEMICONDUCTOR LTD·Filed 2009·Granted Sep 28, 2010·0 cites·12 claims
- 2646US6087244AMethods of forming semiconductor-on-insulator devices including buried layers of opposite conductivity typeFAIRCHILD KR SEMICONDUCTOR LTD·Filed 1999·Granted Jul 11, 2000·12 cites·7 claims
- 2746US5872377APower semiconductor devices having highly integrated unit cells thereinSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Feb 16, 1999·10 cites·10 claims
- 2845US8242007B2Semiconductor device formed using single polysilicon process and method of fabricating the samePARK JONG-HO·Filed 2009·Granted Aug 14, 2012·0 cites·8 claims
- 2943US8097510B2Method of forming lateral trench gate FET with direct source-drain current pathJEON CHANG-KI·Filed 2010·Granted Jan 17, 2012·0 cites·15 claims
- 3042US8330218B2Semiconductor device and method of fabricating the samePARK JONG-HO·Filed 2010·Granted Dec 11, 2012·0 cites·12 claims
- 3139US7888768B2Power integrated circuit device having embedded high-side power switchFAIRCHILD KR SEMICONDUCTOR LTD·Filed 2006·Granted Feb 15, 2011·0 cites·12 claims
- 3234US2002017683A1High voltage semiconductor device having high breakdown voltage isolation regionFAIRCHILD KR SEMICONDUCTOR LTD·Filed 2001·Application pending·0 cites
- 3334US2017040422A1Semiconductor devices including a metal oxide semiconductor structureSAMSUNG ELECTRONICS CO LTD·Filed 2016·Application pending·0 cites
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