Inventor · disambiguated record
Scott Deboer
Also filed as: DEBOER SCOTT · DEBOER SCOTT J · DEBOER SCOTT JEFFREY
122 granted patents·10 pending applications·2,827 citations·filing 1995–2008
99Inventor score
Top patents by PatentIndex Score
132 records- 0198US6251802B1Methods of forming carbon-containing layersMICRON TECHNOLOGY INC·Filed 1998·Granted Jun 26, 2001·262 cites·2 claims
- 0295US6858523B2Semiconductor processing methods of transferring patterns from patterned photoresists to materials, and structures comprising silicon nitrideMICRON TECHNOLOGY INC·Filed 2002·Granted Feb 22, 2005·51 cites·5 claims
- 0395US6436818B1Semiconductor structure having a doped conductive layerMICRON TECHNOLOGY INC·Filed 1999·Granted Aug 20, 2002·114 cites·17 claims
- 0493US6325017B1Apparatus for forming a high dielectric filmMICRON TECHNOLOGY INC·Filed 1999·Granted Dec 4, 2001·97 cites·16 claims
- 0593US6204143B1Method of forming high aspect ratio structures for semiconductor devicesMICRON TECHNOLOGY INC·Filed 1999·Granted Mar 20, 2001·130 cites·14 claims
- 0693US5910880ASemiconductor circuit components and capacitorsMICRON TECHNOLOGY INC·Filed 1997·Granted Jun 8, 1999·98 cites·5 claims
- 0792US6548405B2Batch processing for semiconductor wafers to form aluminum nitride and titanium aluminum nitrideMICRON TECHNOLOGY INC·Filed 2002·Granted Apr 15, 2003·48 cites·56 claims
- 0892US6365453B1Method and structure for reducing contact aspect ratiosMICRON TECHNOLOGY INC·Filed 1999·Granted Apr 2, 2002·86 cites·19 claims
- 0992US6015997ASemiconductor structure having a doped conductive layerMICRON TECHNOLOGY INC·Filed 1997·Granted Jan 18, 2000·87 cites·22 claims
- 1091US7153746B2Capacitors, methods of forming capacitors, and methods of forming capacitor dielectric layersMICRON TECHNOLOGY INC·Filed 2005·Granted Dec 26, 2006·13 cites·10 claims
- 1191US6872639B2Fabrication of semiconductor devices with transition metal boride films as diffusion barriersMICRON TECHNOLOGY INC·Filed 2003·Granted Mar 29, 2005·43 cites·17 claims
- 1291US6720609B2Structure for reducing contact aspect ratiosMICRON TECHNOLOGY INC·Filed 2002·Granted Apr 13, 2004·40 cites·9 claims
- 1391US6365519B2Batch processing for semiconductor wafers to form aluminum nitride and titanium aluminum nitrideMICRON TECHNOLOGY INC·Filed 2001·Granted Apr 2, 2002·42 cites·30 claims
- 1491US6218293B1Batch processing for semiconductor wafers to form aluminum nitride and titanium aluminum nitrideMICRON TECHNOLOGY INC·Filed 1998·Granted Apr 17, 2001·90 cites·26 claims
- 1590US6632719B1Capacitor structures with recessed hemispherical grain siliconMICRON TECHNOLOGY INC·Filed 2000·Granted Oct 14, 2003·40 cites·26 claims
- 1690US6461982B2Methods for forming a dielectric filmMICRON TECHNOLOGY INC·Filed 1997·Granted Oct 8, 2002·74 cites·16 claims
- 1788US7268072B2Method and structure for reducing contact aspect ratiosMICRON TECHNOLOGY INC·Filed 2005·Granted Sep 11, 2007·10 cites·19 claims
- 1888US6146959AMethod of forming capacitors containing tantalumMICRON TECHNOLOGY INC·Filed 1998·Granted Nov 14, 2000·64 cites·43 claims
- 1987US6875707B2Method of forming a capacitor dielectric layerMICRON TECHNOLOGY INC·Filed 2003·Granted Apr 5, 2005·29 cites·8 claims
- 2086US6486020B1High pressure reoxidation/anneal of high dielectric constant materialsMICRON TECHNOLOGY INC·Filed 2000·Granted Nov 26, 2002·26 cites·70 claims
- 2186US6440860B1Semiconductor processing methods of transferring patterns from patterned photoresists to materials, and structures comprising silicon nitrideMICRON TECHNOLOGY INC·Filed 2000·Granted Aug 27, 2002·21 cites·10 claims
- 2286US6281543B1Double layer electrode and barrier system on hemispherical grain silicon for use with high dielectric constant materials and methods for fabricating the sameMICRON TECHNOLOGY INC·Filed 1999·Granted Aug 28, 2001·47 cites·14 claims
- 2385US6251720B1High pressure reoxidation/anneal of high dielectric constant materialsFiled 1996·Granted Jun 26, 2001·58 cites·51 claims
- 2485US5930106ADRAM capacitors made from silicon-germanium and electrode-limited conduction dielectric filmsMICRON TECHNOLOGY INC·Filed 1996·Granted Jul 27, 1999·51 cites·22 claims
- 2584US6191443B1Capacitors, methods of forming capacitors, and DRAM memory cellsMICRON TECHNOLOGY INC·Filed 1998·Granted Feb 20, 2001·52 cites·7 claims
- 2684US6090723AConditioning of dielectric materialsMICRON TECHNOLOGY INC·Filed 1997·Granted Jul 18, 2000·70 cites·15 claims
- 2783US6864527B2Capacitor having tantalum oxynitride film and method for making sameMICRON TECHNOLOGY INC·Filed 2002·Granted Mar 8, 2005·18 cites·63 claims
- 2883US6423649B2Method and apparatus for stabilizing high pressure oxidation of a semiconductor deviceMICRON TECHNOLOGY INC·Filed 2001·Granted Jul 23, 2002·17 cites·71 claims
- 2982US6670238B2Method and structure for reducing contact aspect ratiosMICRON TECHNOLOGY INC·Filed 2001·Granted Dec 30, 2003·20 cites·12 claims
- 3082US6458645B2Capacitor having tantalum oxynitride film and method for making sameMICRON TECHNOLOGY INC·Filed 1998·Granted Oct 1, 2002·41 cites·23 claims
- 3182US6180481B1Barrier layer fabrication methodsMICRON TECHNOLOGY INC·Filed 1998·Granted Jan 30, 2001·54 cites·33 claims
- 3282US6162744AMethod of forming capacitors having high-K oxygen containing capacitor dielectric layers, method of processing high-K oxygen containing dielectric layers, method of forming a DRAM cell having having high-K oxygen containing capacitor dielectric layersMICRON TECHNOLOGY INC·Filed 1998·Granted Dec 19, 2000·62 cites·41 claims
- 3381US6150208ADRAM capacitors made from silicon-germanium and electrode-limited conduction dielectric filmsMICRON TECHNOLOGY INC·Filed 1998·Granted Nov 21, 2000·40 cites·19 claims
- 3480US7038265B2Capacitor having tantalum oxynitride film and method for making sameMICRON TECHNOLOGY INC·Filed 2005·Granted May 2, 2006·4 cites·55 claims
- 3580US6891215B2CapacitorsMICRON TECHNOLOGY INC·Filed 2003·Granted May 10, 2005·16 cites·9 claims
- 3680US5985771ASemiconductor wafer assemblies comprising silicon nitride, methods of forming silicon nitride, and methods of reducing stress on semiconductive wafersMICRON TECHNOLOGY INC·Filed 1998·Granted Nov 16, 1999·42 cites·28 claims
- 3779US6878585B2Methods of forming capacitorsMICRON TECHNOLOGY INC·Filed 2001·Granted Apr 12, 2005·16 cites·42 claims
- 3879US6316800B1Boride electrodes and barriers for cell dielectricsMICRON TECHNOLOGY INC·Filed 2000·Granted Nov 13, 2001·17 cites·15 claims
- 3979US5926730AConductor layer nitridationMICRON TECHNOLOGY INC·Filed 1997·Granted Jul 20, 1999·30 cites·29 claims
- 4078US5960294AMethod of fabricating a semiconductor device utilizing polysilicon grainsMICRON TECHNOLOGY INC·Filed 1998·Granted Sep 28, 1999·42 cites·38 claims
- 4177US6696336B2Double sided container process used during the manufacture of a semiconductor deviceMICRON TECHNOLOGY INC·Filed 2001·Granted Feb 24, 2004·19 cites·20 claims
- 4277US6596651B2Method for stabilizing high pressure oxidation of a semiconductor deviceMICRON TECHNOLOGY INC·Filed 2002·Granted Jul 22, 2003·11 cites·71 claims
- 4376US6391710B1Methods of forming capacitorsMICRON TECHNOLOGY INC·Filed 2000·Granted May 21, 2002·13 cites·20 claims
- 4475US6822342B2Raised-lines overlay semiconductor targets and method of making the sameMICRON TECHNOLOGY INC·Filed 2001·Granted Nov 23, 2004·14 cites·9 claims
- 4575US6400552B2Capacitor with conductively doped Si-Ge alloy electrodeMICRON TECHNOLOGY INC·Filed 2001·Granted Jun 4, 2002·13 cites·24 claims
- 4674US7092233B2Capacitor electrode having an interface layer of different chemical composition formed on a bulk layerMICRON TECHNOLOGY INC·Filed 2005·Granted Aug 15, 2006·4 cites·15 claims
- 4774US6258729B1Oxide etching method and structures resulting from sameMICRON TECHNOLOGY INC·Filed 1999·Granted Jul 10, 2001·37 cites·36 claims
- 4873US6531728B2Oxide etching method and structures resulting from sameMICRON TECHNOLOGY INC·Filed 2001·Granted Mar 11, 2003·13 cites·28 claims
- 4972US7206215B2Antifuse having tantalum oxynitride film and method for making sameMICRON TECHNOLOGY INC·Filed 2002·Granted Apr 17, 2007·9 cites·29 claims
- 5072US7084448B2Double sided container process used during the manufacture of a semiconductor deviceMICRON TECHNOLOGY INC·Filed 2004·Granted Aug 1, 2006·14 cites·13 claims
Showing the top 50 of 132 patent records by PatentIndex Score.
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