Inventor · disambiguated record
Ping-Wei Lin
Also filed as: LIN PING-WEI
10 granted patents·9 pending applications·95 citations·filing 1998–2007
88Inventor score
Files withMOSEL VITELIC INC7UNITED MICROELECTRONICS CORP2LEE TZONG-SHENG1LIN PING-WEI1SILICON INTEGRATED SYS CORP1
Top patents by PatentIndex Score
19 records- 0164US6071794AMethod to prevent the formation of a thinner portion of insulating layer at the junction between the side walls and the bottom insulatorMOSEL VITELIC INC·Filed 1999·Granted Jun 6, 2000·21 cites·17 claims
- 0262US6355974B1Method to prevent the formation of a thinner portion of insulating layer at the junction between the side walls and the bottom insulatorMOSEL VITELIC INC·Filed 2000·Granted Mar 12, 2002·9 cites·5 claims
- 0361US6864150B2Manufacturing method of shallow trench isolationSILICON INTEGRATED SYS CORP·Filed 2003·Granted Mar 8, 2005·13 cites·19 claims
- 0461US6066529AMethod for enlarging surface area of a plurality of hemi-spherical grains on the surface of a semiconductor chipMOSEL VITELIC INC·Filed 1998·Granted May 23, 2000·27 cites·11 claims
- 0558US6191003B1Method for planarizing a polycrystalline silicon layer deposited on a trenchMOSEL VITELIC INC·Filed 2000·Granted Feb 20, 2001·10 cites·10 claims
- 0657US7651909B2Method for fabricating metal-insulator-metal capacitorUNITED MICROELECTRONICS CORP·Filed 2006·Granted Jan 26, 2010·2 cites·14 claims
- 0753US6551900B1Trench gate oxide formation methodFiled 2000·Granted Apr 22, 2003·8 cites·12 claims
- 0847US2008124485A1Method of successively depositing multi-film releasing plasma chargeUNITED MICROELECTRONICS CORP·Filed 2006·Application pending·0 cites
- 0940US2008090020A1Method for fabricating metal-insulator-metal capacitorLIN PING-WEI·Filed 2007·Application pending·0 cites
- 1037US2006219924A1Infrared imaging sensor and vacuum packaging method thereofLEE TZONG-SHENG·Filed 2005·Application pending·0 cites
- 1134US2002175145A1Method of forming void-free intermetal dielectricsFiled 2001·Application pending·0 cites
- 1231US2004142562A1Method of fabricating a shallow trench isolation structureFiled 2003·Application pending·0 cites
- 1331US2003077917A1Method of fabricating a void-free barrier layerFiled 2001·Application pending·0 cites
- 1430US6261966B1Method for improving trench isolationMOSEL VITELIC INC·Filed 1999·Granted Jul 17, 2001·5 cites·7 claims
- 1530US2003159655A1Apparatus for depositing an insulation layer in a trenchFiled 2002·Application pending·0 cites
- 1629US2005186796A1Method for gap filling between metal-metal linesSIS MICROELECTRONICS CORP·Filed 2004·Application pending·0 cites
- 1728US6171904B1Method for forming rugged polysilicon capacitorMOSEL VITELIC INC·Filed 1999·Granted Jan 9, 2001·0 cites·29 claims
- 1826US6261930B1Method for forming a hemispherical-grain polysiliconMOSEL VITELIC INC·Filed 1999·Granted Jul 17, 2001·0 cites·14 claims
- 1925US2003162364A1Method of forming shallow trench isolation in a substrateFiled 2002·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →