Inventor · disambiguated record
Kazunori Ohuchi
Also filed as: OHUCHI KAZUNORI
36 granted patents·3,240 citations·filing 1982–2002
98Inventor score
Files withTOSHIBA KK31TOKYO SHIBAURA ELECTRIC CO2YASKAWA DENKI SEISAKUSHO KK2KABUSHIKI KASIHA TOSHIBA1
Top patents by PatentIndex Score
36 records- 0199US4959812AElectrically erasable programmable read-only memory with NAND cell structureTOSHIBA KK·Filed 1988·Granted Sep 25, 1990·652 cites·15 claims
- 0298US6545909B2Nonvolatile semiconductor memory deviceTOSHIBA KK·Filed 2002·Granted Apr 8, 2003·119 cites·22 claims
- 0398US6363010B2Nonvolatile semiconductor memory deviceTOSHIBA KK·Filed 2001·Granted Mar 26, 2002·134 cites·5 claims
- 0498US5602789AElectrically erasable and programmable non-volatile and multi-level memory systemn with write-verify controllerTOSHIBA KK·Filed 1995·Granted Feb 11, 1997·284 cites·25 claims
- 0598US5386422AElectrically erasable and programmable non-volatile memory system with write-verify controller using two reference levelsTOSHIBA KK·Filed 1994·Granted Jan 31, 1995·293 cites·2 claims
- 0698US4800530ASemiconductor memory system with dynamic random access memory cellsKABUSHIKI KASIHA TOSHIBA·Filed 1987·Granted Jan 24, 1989·172 cites·11 claims
- 0797US6282117B1Nonvolatile semiconductor memory deviceTOSHIBA KK·Filed 2000·Granted Aug 28, 2001·106 cites·6 claims
- 0896US5521865ANon-volatile semiconductor memory device for storing multi-value dataTOSHIBA KK·Filed 1995·Granted May 28, 1996·185 cites·20 claims
- 0995US5969985ANonvolatile semiconductor memory deviceTOSHIBA KK·Filed 1997·Granted Oct 19, 1999·100 cites·18 claims
- 1094US5469444AElectrically erasable and programmable non-volatile memory system with write-verify controller using two reference levelsTOSHIBA KK·Filed 1994·Granted Nov 21, 1995·174 cites·20 claims
- 1194US5321699AElectrically erasable and programmable non-volatile memory system with write-verify controller using two reference levelsTOSHIBA KK·Filed 1992·Granted Jun 14, 1994·171 cites·20 claims
- 1292US5523980ASemiconductor memory deviceTOSHIBA KK·Filed 1994·Granted Jun 4, 1996·99 cites·10 claims
- 1391US6044013ANonvolatile semiconductor memory deviceTOSHIBA KK·Filed 1999·Granted Mar 28, 2000·61 cites·39 claims
- 1491US5831903AElectrically erasable programmable read-only memory with threshold value controller for data programming and method of programming the sameTOSHIBA KK·Filed 1997·Granted Nov 3, 1998·76 cites·19 claims
- 1591US4926382ADivided bit line type dynamic random access memory with charging/discharging current suppressorTOSHIBA KK·Filed 1988·Granted May 15, 1990·67 cites·18 claims
- 1690USRE35838EElectrically erasable programmable read-only memory with NAND cell structureTOSHIBA KK·Filed 1995·Granted Jul 7, 1998·90 cites·16 claims
- 1784US5508957ANon-volatile semiconductor memory with NAND cell structure and switching transistors with different channel lengths to reduce punch-throughTOSHIBA KK·Filed 1994·Granted Apr 16, 1996·56 cites·6 claims
- 1881US5933436AError correction/detection circuit and semiconductor memory device using the sameTOSHIBA KK·Filed 1996·Granted Aug 3, 1999·47 cites·31 claims
- 1981US5379256AElectrically erasable programmable read-only memory with write/verify controllerTOSHIBA KK·Filed 1994·Granted Jan 3, 1995·41 cites·20 claims
- 2080US5657270AElectrically erasable programmable read-only memory with threshold value controller for data programmingTOSHIBA KK·Filed 1995·Granted Aug 12, 1997·36 cites·54 claims
- 2180US5555203ADynamic semiconductor memory deviceTOSHIBA KK·Filed 1994·Granted Sep 10, 1996·43 cites·17 claims
- 2279US6349395B2Configurable integrated circuit and method of testing the sameTOSHIBA KK·Filed 1998·Granted Feb 19, 2002·43 cites·16 claims
- 2375US5740112ASense amplifier for use in an EEPROMTOSHIBA KK·Filed 1996·Granted Apr 14, 1998·34 cites·17 claims
- 2474US6466054B2Level converter circuitTOSHIBA KK·Filed 2001·Granted Oct 15, 2002·18 cites·18 claims
- 2571US6677797B2Semiconductor integrated circuitTOSHIBA KK·Filed 2001·Granted Jan 13, 2004·15 cites·18 claims
- 2670US6081454AElectrically erasable programmable read-only memory with threshold value controller for data programmingTOSHIBA KK·Filed 1998·Granted Jun 27, 2000·23 cites·8 claims
- 2764US4503343AActive pull-up circuitTOKYO SHIBAURA ELECTRIC CO·Filed 1982·Granted Mar 5, 1985·15 cites·3 claims
- 2863US5477495ANonvolatile semiconductor memory apparatusTOSHIBA KK·Filed 1994·Granted Dec 19, 1995·22 cites·22 claims
- 2961US5173878ASemiconductor memory including address multiplexing circuitry for changing the order of supplying row and column addresses between read and write cyclesTOSHIBA KK·Filed 1991·Granted Dec 22, 1992·16 cites·2 claims
- 3059US5933380ASemiconductor memory device having a multilayered bitline structure with respective wiring layers for reading and writing dataTOSHIBA KK·Filed 1997·Granted Aug 3, 1999·18 cites·20 claims
- 3144US4720661AMethod and apparatus for controlling reel tensionYASKAWA DENKI SEISAKUSHO KK·Filed 1985·Granted Jan 19, 1988·7 cites·24 claims
- 3240US5596543ASemiconductor memory device including circuitry for activating and deactivating a word line within a single RAS cycleTOSHIBA KK·Filed 1992·Granted Jan 21, 1997·5 cites·4 claims
- 3338US6198687B1Semiconductor memory device having a plurality of transfer gates and improved word line and column select timing for high speed write operationsTOSHIBA KK·Filed 1996·Granted Mar 6, 2001·4 cites·11 claims
- 3436US6327654B1Semiconductor integrated circuit for cryptographic process and encryption algorithm alternating methodTOSHIBA KK·Filed 1998·Granted Dec 4, 2001·9 cites·19 claims
- 3533US4947088AMethod and apparatus for controlling reel tensionYASKAWA DENKI SEISAKUSHO KK·Filed 1988·Granted Aug 7, 1990·3 cites·18 claims
- 3631US4611237ASemiconductor integrated circuit deviceTOKYO SHIBAURA ELECTRIC CO·Filed 1984·Granted Sep 9, 1986·2 cites·3 claims
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