Inventor · disambiguated record
Jin Ying
Also filed as: YING JIN · YING JIN PIN
9 granted patents·4 pending applications·88 citations·filing 2002–2010
87Inventor score
Top patents by PatentIndex Score
13 records- 0192US7824990B2Multi-metal-oxide high-K gate dielectricsTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Nov 2, 2010·25 cites·21 claims
- 0292US7812414B2Hybrid process for forming metal gatesTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Oct 12, 2010·20 cites·13 claims
- 0386US7465634B2Method of forming integrated circuit devices having n-MOSFET and p-MOSFET transistors with elevated and silicided source/drain structuresTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Dec 16, 2008·14 cites·20 claims
- 0479US7732878B2MOS devices with continuous contact etch stop layerTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jun 8, 2010·8 cites·9 claims
- 0575US7531399B2Semiconductor devices and methods with bilayer dielectricsTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted May 12, 2009·5 cites·17 claims
- 0672US7106972B2Methods of improving line of sight wireless optical communication through adverse environmental conditionsUNIV CITY·Filed 2002·Granted Sep 12, 2006·14 cites·33 claims
- 0765US8836038B2CMOS dual metal gate semiconductor deviceHOU YONG-TIAN·Filed 2010·Granted Sep 16, 2014·2 cites·19 claims
- 0852US8384159B2Semiconductor devices and methods with bilayer dielectricsTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Feb 26, 2013·0 cites·19 claims
- 0946US7939396B2Base oxide engineering for high-K gate stacksTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted May 10, 2011·0 cites·20 claims
- 1040US2008050879A1Methods of forming metal-containing gate structuresTAIWAN SEMICONDUCTOR MFG·Filed 2006·Application pending·0 cites
- 1139US2008093682A1Polysilicon levels for silicided structures including MOSFET gate electrodes and 3D devicesYAO LIANG-GI·Filed 2006·Application pending·0 cites
- 1238US2008001237A1Semiconductor device having nitrided high-k gate dielectric and metal gate electrode and methods of forming sameTAIWAN SEMICONDUCTOR MFG·Filed 2006·Application pending·0 cites
- 1337US2006275975A1Nitridated gate dielectric layerYEH MATT·Filed 2005·Application pending·0 cites
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