Inventor · disambiguated record
Lee Mccarthy
Also filed as: MCCARTHY LEE · MCCARTHY LEE S
8 granted patents·6 pending applications·122 citations·filing 2005–2014
88Inventor score
Top patents by PatentIndex Score
14 records- 0194US8742459B2High voltage III-nitride semiconductor devicesMISHRA UMESH·Filed 2009·Granted Jun 3, 2014·32 cites·33 claims
- 0294US7719020B2(Al,Ga,In)N and ZnO direct wafer bonded structure for optoelectronic applications, and its fabrication methodUNIV CALIFORNIA·Filed 2006·Granted May 18, 2010·28 cites·20 claims
- 0392US9293561B2High voltage III-nitride semiconductor devicesTRANSPHORM INC·Filed 2014·Granted Mar 22, 2016·12 cites·37 claims
- 0489US7344958B2Method for wafer bonding (A1, In, Ga)N and Zn(S, Se) for optoelectronic applicationsUNIV CALIFORNIA·Filed 2005·Granted Mar 18, 2008·21 cites·17 claims
- 0588US8334151B2Method for fabricating a direct wafer bonded optoelectronic deviceMURAI AKIHIKO·Filed 2010·Granted Dec 18, 2012·9 cites·13 claims
- 0687US9257547B2III-N device structures having a non-insulating substrateFICHTENBAUM NICHOLAS·Filed 2011·Granted Feb 9, 2016·14 cites·30 claims
- 0775US8558285B2Method using low temperature wafer bonding to fabricate transistors with heterojunctions of Si(Ge) to III-N materialsMISHRA UMESH K·Filed 2011·Granted Oct 15, 2013·4 cites·21 claims
- 0871US9096939B2Electrolysis transistorMISHRA UMESH·Filed 2008·Granted Aug 4, 2015·2 cites·19 claims
- 0963US2013140189A1Compact electric appliance for providing gas for combustionTRANSPHORM INC·Filed 2012·Application pending·0 cites
- 1061US2009145771A1Compact electric appliance for providing gas for combustionTRANSPHORM INC·Filed 2008·Application pending·0 cites
- 1155US2009134041A1Compact electric appliance providing hydrogen injection for improved performance of internal combustion enginesTRANSPHORM INC·Filed 2008·Application pending·0 cites
- 1253US2008296617A1METHOD USING LOW TEMPERATURE WAFER BONDING TO FABRICATE TRANSISTORS WITH HETEROJUNCTIONS OF Si(Ge) TO III-N MATERIALSUNIV CALIFORNIA·Filed 2008·Application pending·0 cites
- 1346US2009085065A1Method to fabricate iii-n semiconductor devices on the n-face of layers which are grown in the iii-face direction using wafer bonding and substrate removalUNIV CALIFORNIA·Filed 2008·Application pending·0 cites
- 1442US2008258150A1Method to fabricate iii-n field effect transistors using ion implantation with reduced dopant activation and damage recovery temperatureUNIV CALIFORNIA·Filed 2008·Application pending·0 cites
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