Inventor · disambiguated record
Jacob C. Hooker
Also filed as: HOOKER JACOB · HOOKER JACOB C · HOOKER JACOB CHRISTOPHER
11 granted patents·5 pending applications·35 citations·filing 2003–2015
86Inventor score
Files withNXP BV5KONINKL PHILIPS ELECTRONICS NV4HOOKER JACOB C2IMEC INTER UNI MICRO ELECTR2HOOKER JACOB CHRISTOPHER1
Top patents by PatentIndex Score
16 records- 0185US9153584B2Transistor device and a method of manufacturing sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 6, 2015·6 cites·14 claims
- 0277US8592922B2Transistor device and a method of manufacturing the sameHOOKER JACOB C·Filed 2009·Granted Nov 26, 2013·5 cites·17 claims
- 0363US7189648B2Method for reducing the contact resistance of the connection regions of a semiconductor deviceKONINKL PHILIPS ELECTRONICS NV·Filed 2004·Granted Mar 13, 2007·7 cites·18 claims
- 0462US7226827B2Method for fabricating semiconductor devices having silicided electrodesKONINKL PHILIPS ELECTRONICS NV·Filed 2004·Granted Jun 5, 2007·9 cites·32 claims
- 0557US8269286B2Complementary semiconductor device with a metal oxide layer exclusive to one conductivity typeHOOKER JACOB C·Filed 2007·Granted Sep 18, 2012·2 cites·23 claims
- 0654US7326631B2Method of manufacturing MOS transistors with gate electrodes formed in a packet of metal layers deposited upon one anotherNXP BV·Filed 2004·Granted Feb 5, 2008·6 cites·4 claims
- 0753US9646892B2Transistor device and a method of manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 9, 2017·0 cites·20 claims
- 0852US7320939B2Semiconductor device fabricated by a method of reducing the contact resistance of the connection regionsIMEC INTER UNI MICRO ELECTR·Filed 2006·Granted Jan 22, 2008·0 cites·20 claims
- 0945US2011049634A1Method of manufacturing a semiconductor device and semiconductor deviceNXP BV·Filed 2009·Application pending·0 cites
- 1041US2007215951A1Semiconductor devices having silicided electrodesIMEC INTER UNI MICRO ELECTR·Filed 2007·Application pending·0 cites
- 1139US7763944B2Semiconductor device and method of manufacturing such a semiconductor deviceNXP BV·Filed 2005·Granted Jul 27, 2010·0 cites·10 claims
- 1239US2009302389A1Method of manufacturing semiconductor device with different metallic gatesNXP BV·Filed 2006·Application pending·0 cites
- 1338US2009267157A1Method or manufacturing a semiconductor device and semiconductor device obtained by using such a methodKONINKL PHILIPS ELECTRONICS NV·Filed 2005·Application pending·0 cites
- 1436US8766370B2Single metal dual dielectric CMOS deviceHOOKER JACOB CHRISTOPHER·Filed 2009·Granted Jul 1, 2014·0 cites·20 claims
- 1535US7429513B2Method of manufacturing a semiconductor deviceNXP BV·Filed 2004·Granted Sep 30, 2008·0 cites·19 claims
- 1634US2006152086A1Method of manufacturing a semiconductor device and semiconductor device obatined with such a methodKONINKL PHILIPS ELECTRONICS NV·Filed 2003·Application pending·0 cites
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