Inventor · disambiguated record
Ellen Lan
Also filed as: LAN ELLEN · LAN ELLEN Y
9 granted patents·1 pending application·494 citations·filing 1997–2005
91Inventor score
Top patents by PatentIndex Score
10 records- 0196US6867078B1Method for forming a microwave field effect transistor with high operating voltageFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Mar 15, 2005·158 cites·30 claims
- 0296US6156611AMethod of fabricating vertical FET with sidewall gate electrodeMOTOROLA INC·Filed 1998·Granted Dec 5, 2000·194 cites·8 claims
- 0379US6091621ANon-volatile multistate memory cell using a ferroelectric gate fetMOTOROLA INC·Filed 1997·Granted Jul 18, 2000·44 cites·6 claims
- 0476US7229903B2Recessed semiconductor deviceFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Jun 12, 2007·21 cites·12 claims
- 0573US5886920AVariable conducting element and method of programmingMOTOROLA INC·Filed 1997·Granted Mar 23, 1999·34 cites·11 claims
- 0671US6939781B2Method of manufacturing a semiconductor component that includes self-aligning a gate electrode to a field plateFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Sep 6, 2005·17 cites·17 claims
- 0767US7253455B2pHEMT with barrier optimized for low temperature operationFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Aug 7, 2007·4 cites·13 claims
- 0857US7253486B2Field plate transistor with reduced field plate resistanceFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted Aug 7, 2007·8 cites·20 claims
- 0952US6262451B1Electrode structure for transistors, non-volatile memories and the likeMOTOROLA INC·Filed 1997·Granted Jul 17, 2001·14 cites·12 claims
- 1036US2005104087A1InGaP pHEMT device for power amplifier operation over wide temperature rangeFiled 2004·Application pending·0 cites
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