Inventor · disambiguated record
Kalyan C. Kolluru
Also filed as: KOLLURU KALYAN · KOLLURU KALYAN C
17 granted patents·24 pending applications·18 citations·filing 2012–2025
89Inventor score
Top patents by PatentIndex Score
41 records- 0190US11908856B2Gate-all-around integrated circuit structures having devices with source/drain-to-substrate electrical contactINTEL CORP·Filed 2019·Granted Feb 20, 2024·5 cites·22 claims
- 0288US11824116B2Gate-all-around integrated circuit structures having devices with channel-to-substrate electrical contactINTEL CORP·Filed 2019·Granted Nov 21, 2023·4 cites·20 claims
- 0378US12294003B2Integrated circuit structures including backside viasINTEL CORP·Filed 2023·Granted May 6, 2025·0 cites·16 claims
- 0478US2025228012A1Integrated circuit structures including backside viasINTEL CORP·Filed 2025·Application pending·0 cites
- 0577US12288789B2Gate-all-around integrated circuit structures having devices with source/drain-to-substrate electrical contactINTEL CORP·Filed 2024·Granted Apr 29, 2025·0 cites·20 claims
- 0676US12402349B2Gate-all-around integrated circuit structures having devices with channel-to-substrate electrical contactINTEL CORP·Filed 2023·Granted Aug 26, 2025·0 cites·20 claims
- 0775US10249597B2Systems, methods, and apparatuses for implementing die recovery in two-level memory (2LM) stacked die subsystemsINTEL CORP·Filed 2016·Granted Apr 2, 2019·3 cites·28 claims
- 0873US2025261452A1Substrate-less silicon controlled rectifier (scr) integrated circuit structuresINTEL CORP·Filed 2025·Application pending·0 cites
- 0972US11791331B2Integrated circuit structures including backside viasINTEL CORP·Filed 2021·Granted Oct 17, 2023·0 cites·16 claims
- 1071US11869987B2Gate-all-around integrated circuit structures including varactorsINTEL CORP·Filed 2022·Granted Jan 9, 2024·0 cites·20 claims
- 1171US9513330B2Charge sharing testing of through-body-viasVUKIC MLADENKO·Filed 2012·Granted Dec 6, 2016·5 cites·21 claims
- 1271US2025254993A1Substrate-free integrated circuit structuresINTEL CORP·Filed 2025·Application pending·0 cites
- 1370US2024055497A1Gate-all-around integrated circuit structures having adjacent deep via substrate contacts for sub-fin electrical contactINTEL CORP·Filed 2023·Application pending·0 cites
- 1465US12328947B2Substrate-less silicon controlled rectifier (SCR) integrated circuit structuresINTEL CORP·Filed 2021·Granted Jun 10, 2025·0 cites·20 claims
- 1564US12317590B2Substrate-free integrated circuit structuresINTEL CORP·Filed 2020·Granted May 27, 2025·0 cites·10 claims
- 1661US11417781B2Gate-all-around integrated circuit structures including varactorsINTEL CORP·Filed 2020·Granted Aug 16, 2022·0 cites·7 claims
- 1760US11837641B2Gate-all-around integrated circuit structures having adjacent deep via substrate contacts for sub-fin electrical contactINTEL CORP·Filed 2019·Granted Dec 5, 2023·0 cites·18 claims
- 1859US12507475B2Substrate-less lateral diode integrated circuit structuresINTEL CORP·Filed 2021·Granted Dec 23, 2025·0 cites·20 claims
- 1959US2021202472A1Integrated circuit structures including backside viasINTEL CORP·Filed 2019·Application pending·0 cites
- 2054US2024413147A1Two-terminal integrated circuit device for electrostatic discharge protectionINTEL CORP·Filed 2023·Application pending·0 cites
- 2154US2024170581A1Backside contacted sub-fin diodesINTEL CORP·Filed 2022·Application pending·0 cites
- 2252US9891269B2Pulsed testing of through-body-viasKOLLURU KALYAN C·Filed 2012·Granted Feb 13, 2018·1 cites·21 claims
- 2352US2024332432A1Varactor comprising high performance thin film transistor materialINTEL CORP·Filed 2023·Application pending·0 cites
- 2451US2024088134A1Targeted sub-fin etch depthINTEL CORP·Filed 2022·Application pending·0 cites
- 2551US2024088131A1Diodes with backside contactINTEL CORP·Filed 2022·Application pending·0 cites
- 2650US11652107B2Substrate-less FinFET diode architectures with backside metal contact and subfin regionsINTEL CORP·Filed 2019·Granted May 16, 2023·0 cites·10 claims
- 2750US2024088136A1Transistor devices with extended drainINTEL CORP·Filed 2022·Application pending·0 cites
- 2850US2024332285A1Circuit components with high performance thin film transistor materialINTEL CORP·Filed 2023·Application pending·0 cites
- 2950US2024088133A1Transistor devices with integrated diodesINTEL CORP·Filed 2022·Application pending·0 cites
- 3049US2023088578A1Lateral diodes in stacked transistor technologiesINTEL CORP·Filed 2021·Application pending·0 cites
- 3149US2022415880A1Substrate-less diode, bipolar and feedthrough integrated circuit structuresINTEL CORP·Filed 2021·Application pending·0 cites
- 3249US2022406773A1Integrated circuit structures with backside self-aligned conductive pass-through contactINTEL CORP·Filed 2021·Application pending·0 cites
- 3348US11145732B2Field-effect transistors with dual thickness gate dielectricsINTEL CORP·Filed 2019·Granted Oct 12, 2021·0 cites·20 claims
- 3448US2023317850A1Non-epitaxial electrical coupling between a front side trench connector and back side contacts of a transistorINTEL CORP·Filed 2022·Application pending·0 cites
- 3548US2022416022A1Substrate-less nanowire-based lateral diode integrated circuit structuresINTEL CORP·Filed 2021·Application pending·0 cites
- 3648US2024088132A1Wide channel diode structure including sub-finINTEL CORP·Filed 2022·Application pending·0 cites
- 3748US2023420578A1Varactor device with backside electrical contactINTEL CORP·Filed 2022·Application pending·0 cites
- 3847US2023420443A1Integrated circuit devices with diodes integrated in subfinsTHOMSON NICHOLAS A·Filed 2022·Application pending·0 cites
- 3947US2023089395A1Vertical diodes in stacked transistor technologiesINTEL CORP·Filed 2021·Application pending·0 cites
- 4047US2022415877A1Electrostatic discharge protection diode for back-side power delivery technologies and methods of fabricationINTEL CORP·Filed 2021·Application pending·0 cites
- 4146US2022399277A1Selective routing through intra-connect bridge diesINTEL CORP·Filed 2021·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →