Inventor · disambiguated record
Young Chai Jung
Also filed as: JUNG YOUNG CHAI
11 granted patents·21 citations·filing 2012–2021
83Inventor score
Top patents by PatentIndex Score
11 records- 0193US11699754B2Gate structure of vertical FET and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 11, 2023·3 cites·20 claims
- 0290US9490177B2Integrated circuit devices including stress proximity effects and methods of fabricating the sameOH CHANG-WOO·Filed 2012·Granted Nov 8, 2016·14 cites·37 claims
- 0383US11145757B2Integrated circuit devices including a vertical field-effect transistor (VFET) and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Oct 12, 2021·3 cites·20 claims
- 0470US10910370B2Integrated circuit devices including a vertical field-effect transistor (VFET) and a fin field-effect transistor (FinFET) and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 2, 2021·1 cites·20 claims
- 0567US11552182B2Integrated circuit devices including a vertical field-effect transistor (VFET) and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 10, 2023·0 cites·20 claims
- 0662US11107906B2Integrated circuit devices including a vertical field-effect transistor (VFET) and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 31, 2021·0 cites·20 claims
- 0757US11233146B2Gate structure of vertical FET and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jan 25, 2022·0 cites·13 claims
- 0853US11735659B2Integrated circuit devices including a vertical field-effect transistor (VFET) and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Aug 22, 2023·0 cites·20 claims
- 0950US11271091B2Fin structure for vertical field effect transistor having two-dimensional shape in plan viewSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Mar 8, 2022·0 cites·16 claims
- 1048US10790368B2Vertical FET devices including a contact on protruding portions of a substrateSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Sep 29, 2020·0 cites·20 claims
- 1144US11296210B2Symmetrical two-dimensional fin structure for vertical field effect transistor and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Apr 5, 2022·0 cites·18 claims
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