Inventor · disambiguated record
David H. Chow
Also filed as: CHOW DAVID · CHOW DAVID H
44 granted patents·556 citations·filing 1987–2023
98Inventor score
Top patents by PatentIndex Score
44 records- 0197US7800067B1Electronically tunable and reconfigurable hyperspectral photon detectorHRL LAB LLC·Filed 2009·Granted Sep 21, 2010·34 cites·11 claims
- 0295US5577061ASuperlattice cladding layers for mid-infrared lasersHUGHES AIRCRAFT CO·Filed 1994·Granted Nov 19, 1996·104 cites·18 claims
- 0394US11314109B1Electrically switchable infrared mirrors using phase-change chalcogenides materialsHRL LAB LLC·Filed 2019·Granted Apr 26, 2022·6 cites·19 claims
- 0494US7652252B1Electronically tunable and reconfigurable hyperspectral photon detectorHRL LAB LLC·Filed 2007·Granted Jan 26, 2010·20 cites·4 claims
- 0591US7266279B1Optically pumped stepped multi-well laserHRL LAB LLC·Filed 2005·Granted Sep 4, 2007·16 cites·20 claims
- 0689US7989277B1Integrated structure with transistors and Schottky diodes and process for fabricating the sameHRL LAB LLC·Filed 2007·Granted Aug 2, 2011·18 cites·14 claims
- 0787US6320212B1Superlattice fabrication for InAs/GaSb/AISb semiconductor structuresHRL LAB LLC·Filed 1999·Granted Nov 20, 2001·60 cites·18 claims
- 0886US8368119B1Integrated structure with transistors and schottky diodes and process for fabricating the sameHRL LAB LLC·Filed 2011·Granted Feb 5, 2013·8 cites·13 claims
- 0984US7569872B1Bipolar transistors with low parasitic lossesHRL LAB LLC·Filed 2005·Granted Aug 4, 2009·12 cites·30 claims
- 1082US5594750ASelectively Si-doped InAs/A1AsSb short-period-superlattices as N-type cladding layers for mid-IR laser structures grown on InAs substratesHUGHES AIRCRAFT CO·Filed 1995·Granted Jan 14, 1997·52 cites·18 claims
- 1181US7368765B1Bipolar transistors with low parasitic lossesHRL LAB LLC·Filed 2005·Granted May 6, 2008·9 cites·33 claims
- 1280US7755023B1Electronically tunable and reconfigurable hyperspectral photon detectorHRL LAB LLC·Filed 2007·Granted Jul 13, 2010·5 cites·15 claims
- 1379US7868335B1Modulation doped super-lattice sub-collector for high-performance HBTs and BJTsHRL LAB LLC·Filed 2008·Granted Jan 11, 2011·7 cites·41 claims
- 1478US8178946B1Modulation doped super-lattice base for heterojunction bipolar transistorsLI JAMES CHINGWEI·Filed 2009·Granted May 15, 2012·6 cites·22 claims
- 1577US6870234B2Optically- and electrically-addressable concentrators of biological and chemical materialsHRL LAB LLC·Filed 2002·Granted Mar 22, 2005·12 cites·13 claims
- 1670US7141446B2Optically- and electrically-addressable concentrators of biological and chemical materialsHRL LAB LLC·Filed 2004·Granted Nov 28, 2006·7 cites·19 claims
- 1768US7372084B1Low power bipolar transistors with low parasitic lossesHRL LAB LLC·Filed 2005·Granted May 13, 2008·4 cites·27 claims
- 1867US7598158B1Method and device for growing pseudomorphic AlInAsSb on InAsHRL LAB LLC·Filed 2006·Granted Oct 6, 2009·2 cites·10 claims
- 1966US7700969B1Type II interband heterostructure backward diodesHRL LAB LLC·Filed 2007·Granted Apr 20, 2010·3 cites·10 claims
- 2066US6635907B1Type II interband heterostructure backward diodesHRL LAB LLC·Filed 1999·Granted Oct 21, 2003·25 cites·17 claims
- 2166US4780331AMethod and apparatus for induction charging of powder by contact electrificationNORDSON CORP·Filed 1987·Granted Oct 25, 1988·20 cites·17 claims
- 2263US7531851B1Electronic device with reduced interface charge between epitaxially grown layers and a method for making the sameHRL LAB LLC·Filed 2007·Granted May 12, 2009·6 cites·10 claims
- 2362US7368764B1Heterojunction bipolar transistor and method to make a heterojunction bipolar transistorHRL LAB LLC·Filed 2005·Granted May 6, 2008·2 cites·19 claims
- 2462US6727153B2Superlattice fabrication for InAs/GaSb/AlSb semiconductor structuresHRL LAB LLC·Filed 2001·Granted Apr 27, 2004·8 cites·18 claims
- 2561US8957455B1Modulation doped super-lattice base for heterojunction bipolar transistorsLI JAMES CHINGWEI·Filed 2012·Granted Feb 17, 2015·1 cites·19 claims
- 2658US8242538B1Method and device for growing pseudomorphic A1InAsSb on InAsDEELMAN PETER·Filed 2011·Granted Aug 14, 2012·1 cites·12 claims
- 2757US6303941B1Integrated asymmetric resonant tunneling diode pair circuitHRL LAB·Filed 1999·Granted Oct 16, 2001·20 cites·20 claims
- 2857US5606178ABipolar resonant tunneling transistorHUGHES AIRCRAFT CO·Filed 1995·Granted Feb 25, 1997·17 cites·22 claims
- 2956US7968435B1Method and device for growing pseudomorphic AlInAsSb on InAsHRL LAB LLC·Filed 2009·Granted Jun 28, 2011·0 cites·12 claims
- 3056US7170105B1Type II interband heterostructure backward diodesHRL LAB LLC·Filed 2004·Granted Jan 30, 2007·7 cites·13 claims
- 3154US12130507B1Electrically-reconfigurable optical device structures with phase change materialsHRL LAB LLC·Filed 2023·Granted Oct 29, 2024·0 cites·26 claims
- 3253US6323696B1Sample and hold circuitHUGHES ELECTRONICS CORP·Filed 1999·Granted Nov 27, 2001·14 cites·25 claims
- 3352US11302739B1High quantum efficiency superlattice infrared detectorHRL LAB LLC·Filed 2016·Granted Apr 12, 2022·0 cites·18 claims
- 3452US5543628AQuantum well infrared filterHUGHES AIRCRAFT CO·Filed 1994·Granted Aug 6, 1996·16 cites·23 claims
- 3545US5296721AStrained interband resonant tunneling negative resistance diodeHUGHES AIRCRAFT CO·Filed 1992·Granted Mar 22, 1994·10 cites·13 claims
- 3644US6855948B2Low base-emitter voltage heterojunction bipolar transistorHRL LAB LLC·Filed 2002·Granted Feb 15, 2005·2 cites·58 claims
- 3743US6812070B2Epitaxially-grown backward diodeHRL LAB LLC·Filed 2003·Granted Nov 2, 2004·1 cites·5 claims
- 3841US5451552AMethod for improvement of optical quality and reduction of background doping in gainSB/INAS superlatticesHUGHES AIRCRAFT CO·Filed 1994·Granted Sep 19, 1995·8 cites·15 claims
- 3940US8193611B1High performance InAs-based devicesRAJAVEL RAJESH·Filed 2006·Granted Jun 5, 2012·0 cites·11 claims
- 4040US5489786ACurrent-controlled resonant tunneling deviceHUGHES AIRCRAFT CO·Filed 1994·Granted Feb 6, 1996·7 cites·5 claims
- 4138US7582536B1Electronic device with reduced interface charge between epitaxially grown layers and a method for making the sameHRL LAB LLC·Filed 2008·Granted Sep 1, 2009·0 cites·14 claims
- 4238US6507043B1Epitaxially-grown backward diodeHRL LAB LLC·Filed 1999·Granted Jan 14, 2003·4 cites·2 claims
- 4336US7514708B280 nanometer diameter resonant tunneling diode with improved peak-to-valley ratioHRL LAB LLC·Filed 2003·Granted Apr 7, 2009·0 cites·12 claims
- 4433US6734470B1Laterally varying multiple diodesHRL LAB LLC·Filed 1999·Granted May 11, 2004·2 cites·2 claims
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