Inventor · disambiguated record
Rimvydas Mickevicius
Also filed as: MICKEVICIUS RIMVYDAS
11 granted patents·24 citations·filing 1994–2019
85Inventor score
Top patents by PatentIndex Score
11 records- 0188US11348017B1Machine learning method and framework for optimizing setups for accurate, speedy and robust TCAD simulationsSYNOPSYS INC·Filed 2018·Granted May 31, 2022·13 cites·20 claims
- 0275US10769339B1Local band-to-band-tunneling model for TCAD simulationSYNOPSYS INC·Filed 2019·Granted Sep 8, 2020·2 cites·20 claims
- 0368US10777638B1Constricted junctionless FinFET/nanowire/nanosheet device having cascode portionSYNOPSYS INC·Filed 2019·Granted Sep 15, 2020·1 cites·22 claims
- 0467US10644107B1Normally-off gallium oxide field-effect transistorSYNOPSYS INC·Filed 2018·Granted May 5, 2020·1 cites·24 claims
- 0567US10128232B2Heterojunction field effect transistor device with serially connected enhancement mode and depletion mode gate regionsSYNOPSYS INC·Filed 2017·Granted Nov 13, 2018·1 cites·30 claims
- 0666US11152313B1Using threading dislocations in GaN/Si systems to generate physically unclonable functionsSYNOPSYS INC·Filed 2019·Granted Oct 19, 2021·1 cites·14 claims
- 0766US9837523B2Tined gate to control threshold voltage in a device formed of materials having piezoelectric propertiesSYNOPSYS INC·Filed 2016·Granted Dec 5, 2017·1 cites·41 claims
- 0853US10403625B2Heterojunction field effect transistor device with serially connected enhancement mode and depletion mode gate regionsSYNOPSYS INC·Filed 2018·Granted Sep 3, 2019·0 cites·24 claims
- 0951US10733348B2Tined gate to control threshold voltage in a device formed of materials having piezoelectric propertiesSYNOPSYS INC·Filed 2018·Granted Aug 4, 2020·0 cites·29 claims
- 1031US5459334ANegative absolute conductance device and methodUS ARMY·Filed 1994·Granted Oct 17, 1995·3 cites·15 claims
- 1125US5650634AInterchannel nonequilibrium confined-phonon exchange deviceUS ARMY·Filed 1995·Granted Jul 22, 1997·1 cites·13 claims
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