Inventor · disambiguated record
Gyung-Jin Min
Also filed as: MIN GYUNG-JIN
15 granted patents·12 pending applications·100 citations·filing 2000–2015
92Inventor score
Top patents by PatentIndex Score
27 records- 0187US9607853B2Patterning method using metal mask and method of fabricating semiconductor device including the same patterning methodSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Mar 28, 2017·6 cites·11 claims
- 0285US9093500B2Methods of forming semiconductor device using bowing control layerPARK JAE-HONG·Filed 2014·Granted Jul 28, 2015·7 cites·25 claims
- 0382US8815697B2Method of fabricating semiconductor deviceYOON JUN-HO·Filed 2012·Granted Aug 26, 2014·9 cites·19 claims
- 0475US7132708B2Semiconductor memory device having self-aligned contacts and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 7, 2006·6 cites·4 claims
- 0574US9412610B2Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Aug 9, 2016·3 cites·18 claims
- 0672US6885052B2Semiconductor memory device having self-aligned contacts and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Apr 26, 2005·17 cites·15 claims
- 0771US8557661B2Methods of manufacturing a semiconductor device and a semiconductor memory device therebyYU HAN-GEUN·Filed 2011·Granted Oct 15, 2013·4 cites·16 claims
- 0868US8805567B2Method of controlling semiconductor process distributionLEE HO-KI·Filed 2011·Granted Aug 12, 2014·3 cites·22 claims
- 0966US6350642B1Method of manufacturing semiconductor memory device including various contact studsSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Feb 26, 2002·17 cites·20 claims
- 1065US6333219B1Method for forming a polysilicon node in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Dec 25, 2001·14 cites·12 claims
- 1162US6479399B2Method of forming interlevel dielectric layer of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Nov 12, 2002·8 cites·14 claims
- 1261US9772296B2Method of inspecting a surface of a substrate and apparatus for performing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Sep 26, 2017·1 cites·14 claims
- 1352US6777341B2Method of forming a self-aligned contact, and method of fabricating a semiconductor device having a self-aligned contactSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Aug 17, 2004·5 cites·20 claims
- 1449US2015114559A1Plasma shielding members, plasma detecting structures, and plasma reaction apparatusesHAN EUN-YOUNG·Filed 2014·Application pending·0 cites
- 1545US9230808B2Method of fabricating semiconductor device using photo keySAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jan 5, 2016·0 cites·14 claims
- 1643US2008076071A1Method of forming a fine patternSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 1742US2006228895A1Method of forming fine pitch photoresist patterns using double patterning techniqueCHAE YUN-SOOK·Filed 2006·Application pending·0 cites
- 1840US2009008701A1Nonvolatile memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 1939US7307703B2Methods of determining an etching end point based on compensation for etching disturbancesSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Dec 11, 2007·0 cites·13 claims
- 2038US2012329224A1Method of forming fine pattern and method of manufacturing semiconductor deviceKONG YOO-CHUL·Filed 2012·Application pending·0 cites
- 2138US2007020780A1Method of processing semiconductor substrate responsive to a state of chamber contaminationBAEK KYE-HYUN·Filed 2006·Application pending·0 cites
- 2238US2004200244A1Remote plasma enhanced cleaning apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2004·Application pending·0 cites
- 2337US2005214694A1Pattern formation methodSAMSUNG ELECTRONICS CO LTD·Filed 2004·Application pending·0 cites
- 2435US2016293444A1Method of manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Application pending·0 cites
- 2535US2001045666A1Semiconductor device having self-aligned contact and fabricating method thereforSAMSUNG ELECTRONICS CO LTD·Filed 2000·Application pending·0 cites
- 2635US2002090808A1Method of manufacturing a self-aligned contact from a conductive layer that is free of voidsFiled 2001·Application pending·0 cites
- 2733US2015380267A1Methods of removing a hard maskSAMSUNG ELECTRONICS CO LTD·Filed 2015·Application pending·0 cites
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