Inventor · disambiguated record
Joseph A. Yedinak
Also filed as: YEDINAK JOSEPH · YEDINAK JOSEPH A · YEDINAK JOSEPH ANDREW
66 granted patents·12 pending applications·1,160 citations·filing 1990–2025
99Inventor score
Files withFAIRCHILD SEMICONDUCTOR33SEMICONDUCTOR COMPONENTS IND LLC16YEDINAK JOSEPH A14HARRIS CORP5GREBS THOMAS E2
Top patents by PatentIndex Score
78 records- 0198US7504303B2Trench-gate field effect transistors and methods of forming the sameFAIRCHILD SEMICONDUCTOR·Filed 2006·Granted Mar 17, 2009·94 cites·21 claims
- 0297US8889511B2Methods of manufacturing power semiconductor devices with trenched shielded split gate transistorYEDINAK JOSEPH A·Filed 2011·Granted Nov 18, 2014·17 cites·19 claims
- 0397US8304829B2Trench-based power semiconductor devices with increased breakdown voltage characteristicsYEDINAK JOSEPH A·Filed 2009·Granted Nov 6, 2012·52 cites·28 claims
- 0497US8013391B2Power semiconductor devices with trenched shielded split gate transistor and methods of manufactureFAIRCHILD SEMICONDUCTOR·Filed 2007·Granted Sep 6, 2011·32 cites·4 claims
- 0596US8803207B2Shielded gate field effect transistorsGREBS THOMAS E·Filed 2011·Granted Aug 12, 2014·26 cites·20 claims
- 0696US8174067B2Trench-based power semiconductor devices with increased breakdown voltage characteristicsYEDINAK JOSEPH A·Filed 2009·Granted May 8, 2012·29 cites·20 claims
- 0796US7923776B2Trench-gate field effect transistor with channel enhancement region and methods of forming the sameFAIRCHILD SEMICONDUCTOR·Filed 2010·Granted Apr 12, 2011·19 cites·13 claims
- 0895US11222976B2Insulated gated field effect transistor structure having shielded source and methodSEMICONDUCTOR COMPONENTS IND LLC·Filed 2020·Granted Jan 11, 2022·3 cites·20 claims
- 0995US8129245B2Methods of manufacturing power semiconductor devices with shield and gate contactsYEDINAK JOSEPH A·Filed 2011·Granted Mar 6, 2012·12 cites·11 claims
- 1095US7582519B2Method of forming a trench structure having one or more diodes embedded therein adjacent a PN junctionFAIRCHILD SEMICONDUCTOR·Filed 2006·Granted Sep 1, 2009·31 cites·27 claims
- 1195US7416948B2Trench FET with improved body to gate alignmentFAIRCHILD SEMICONDUCTOR·Filed 2006·Granted Aug 26, 2008·30 cites·44 claims
- 1295US5079608APower MOSFET transistor circuit with active clampHARRIS CORP·Filed 1990·Granted Jan 7, 1992·233 cites·20 claims
- 1394US8673700B2Superjunction structures for power devices and methods of manufactureYEDINAK JOSEPH A·Filed 2011·Granted Mar 18, 2014·23 cites·19 claims
- 1494US8563377B2Trench-based power semiconductor devices with increased breakdown voltage characteristicsYEDINAK JOSEPH A·Filed 2012·Granted Oct 22, 2013·11 cites·19 claims
- 1594US8043913B2Method of forming trench-gate field effect transistorsFAIRCHILD SEMICONDUCTOR·Filed 2011·Granted Oct 25, 2011·13 cites·18 claims
- 1693US8013387B2Power semiconductor devices with shield and gate contacts and methods of manufactureFAIRCHILD SEMICONDUCTOR·Filed 2007·Granted Sep 6, 2011·12 cites·13 claims
- 1792US8963212B2Trench-based power semiconductor devices with increased breakdown voltage characteristicsFAIRCHILD SEMICONDUCTOR·Filed 2013·Granted Feb 24, 2015·8 cites·23 claims
- 1892US7595542B2Periphery design for charge balance power devicesFAIRCHILD SEMICONDUCTOR·Filed 2006·Granted Sep 29, 2009·31 cites·14 claims
- 1992US7118951B2Method of isolating the current sense on power devices while maintaining a continuous stripe cellFAIRCHILD SEMICONDUCTOR·Filed 2005·Granted Oct 10, 2006·26 cites·9 claims
- 2091US7132712B2Trench structure having one or more diodes embedded therein adjacent a PN junctionFAIRCHILD SEMICONDUCTOR·Filed 2002·Granted Nov 7, 2006·53 cites·41 claims
- 2190US8772868B2Superjunction structures for power devices and methods of manufactureYEDINAK JOSEPH A·Filed 2011·Granted Jul 8, 2014·12 cites·20 claims
- 2290US8148749B2Trench-shielded semiconductor deviceGREBS THOMAS E·Filed 2009·Granted Apr 3, 2012·21 cites·34 claims
- 2389US12051967B2Integrated transistor and resistor-diode-capacitor snubberSEMICONDUCTOR COMPONENTS IND LLC·Filed 2022·Granted Jul 30, 2024·1 cites·20 claims
- 2489US5164802APower vdmosfet with schottky on lightly doped drain of lateral driver fetHARRIS CORP·Filed 1991·Granted Nov 17, 1992·94 cites·2 claims
- 2588US8193581B2Trench-based power semiconductor devices with increased breakdown voltage characteristicsYEDINAK JOSEPH A·Filed 2009·Granted Jun 5, 2012·10 cites·16 claims
- 2687US11637201B2Insulated gated field effect transistor structure having shielded source and methodSEMICONDUCTOR COMPONENTS IND LLC·Filed 2021·Granted Apr 25, 2023·1 cites·20 claims
- 2786US8928077B2Superjunction structures for power devicesLEE JAEGIL·Filed 2008·Granted Jan 6, 2015·17 cites·25 claims
- 2886US8884365B2Trench-gate field effect transistorFAIRCHILD SEMICONDUCTOR·Filed 2013·Granted Nov 11, 2014·4 cites·20 claims
- 2986US8564024B2Trench-based power semiconductor devices with increased breakdown voltage characteristicsYEDINAK JOSEPH A·Filed 2009·Granted Oct 22, 2013·8 cites·23 claims
- 3086US8357976B2Wide bandgap device in parallel with a device that has a lower avalanche breakdown voltage and a higher forward voltage drop than the wide bandgap deviceFAIRCHILD SEMICONDUCTOR·Filed 2010·Granted Jan 22, 2013·8 cites·8 claims
- 3184US9748329B2Trench-based power semiconductor devices with increased breakdown voltage characteristicsFAIRCHILD SEMICONDUCTOR·Filed 2015·Granted Aug 29, 2017·3 cites·22 claims
- 3284US9496391B2Termination region of a semiconductor deviceFAIRCHILD SEMICONDUCTOR·Filed 2014·Granted Nov 15, 2016·5 cites·14 claims
- 3382US10784373B1Insulated gated field effect transistor structure having shielded source and methodSEMICONDUCTOR COMPONENTS IND LLC·Filed 2019·Granted Sep 22, 2020·3 cites·20 claims
- 3482US9595596B2Superjunction structures for power devicesFAIRCHILD SEMICONDUCTOR·Filed 2015·Granted Mar 14, 2017·3 cites·21 claims
- 3582US7859057B2Wide bandgap device in parallel with a device that has a lower avalanche breakdown voltage and a higher forward voltage drop than the wide bandgap deviceFAIRCHILD SEMICONDUCTOR·Filed 2009·Granted Dec 28, 2010·8 cites·16 claims
- 3682US7586156B2Wide bandgap device in parallel with a device that has a lower avalanche breakdown voltage and a higher forward voltage drop than the wide bandgap deviceFAIRCHILD SEMICONDUCTOR·Filed 2007·Granted Sep 8, 2009·8 cites·38 claims
- 3781US10868113B2Trench-based power semiconductor devices with increased breakdown voltage characteristicsFAIRCHILD SEMICONDUCTOR·Filed 2017·Granted Dec 15, 2020·2 cites·18 claims
- 3881US10749027B2Methods and apparatus related to termination regions of a semiconductor deviceFAIRCHILD SEMICONDUCTOR·Filed 2018·Granted Aug 18, 2020·2 cites·17 claims
- 3981US8836028B2Superjunction structures for power devices and methods of manufactureYEDINAK JOSEPH A·Filed 2011·Granted Sep 16, 2014·8 cites·21 claims
- 4080US6906362B2Method of isolating the current sense on power devices while maintaining a continuous stripe cellFAIRCHILD SEMICONDUCTOR·Filed 2002·Granted Jun 14, 2005·25 cites·8 claims
- 4180US5323036APower FET with gate segments covering drain regions disposed in a hexagonal patternHARRIS CORP·Filed 1992·Granted Jun 21, 1994·49 cites·12 claims
- 4279US11342424B2Electronic device including a transistor and a shield electrodeSEMICONDUCTOR COMPONENTS IND LLC·Filed 2020·Granted May 24, 2022·1 cites·20 claims
- 4379US9293526B2Trench-based power semiconductor devices with increased breakdown voltage characteristicsFAIRCHILD SEMICONDUCTOR·Filed 2012·Granted Mar 22, 2016·3 cites·27 claims
- 4479US6777747B2Thick buffer region design to improve IGBT self-clamped inductive switching (SCIS) energy density and device manufacturabilityFAIRCHILD SEMICONDUCTOR·Filed 2002·Granted Aug 17, 2004·31 cites·10 claims
- 4578US8441069B2Structure and method for forming trench-gate field effect transistor with source plugYILMAZ HAMZA·Filed 2011·Granted May 14, 2013·2 cites·20 claims
- 4677US12483233B2Method for suppressing voltage overshootsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2023·Granted Nov 25, 2025·0 cites·20 claims
- 4777US8049276B2Reduced process sensitivity of electrode-semiconductor rectifiersFAIRCHILD SEMICONDUCTOR·Filed 2009·Granted Nov 1, 2011·6 cites·22 claims
- 4876US12027622B2Insulated gated field effect transistor structure having shielded source and methodSEMICONDUCTOR COMPONENTS IND LLC·Filed 2023·Granted Jul 2, 2024·0 cites·20 claims
- 4975US6831329B2Quick punch through IGBT having gate-controllable DI/DT and reduced EMI during inductive turn offFAIRCHILD SEMICONDUCTOR·Filed 2002·Granted Dec 14, 2004·21 cites·26 claims
- 5074US8502313B2Double layer metal (DLM) power MOSFETDIKSHIT ROHIT·Filed 2011·Granted Aug 6, 2013·6 cites·23 claims
Showing the top 50 of 78 patent records by PatentIndex Score.
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