Inventor · disambiguated record
Masayoshi Koike
Also filed as: KOIKE MASAYOSHI
78 granted patents·18 pending applications·2,508 citations·filing 1992–2014
99Inventor score
Files withTOYODA GOSEI KK62SAMSUNG ELECTRO MECH19SAMSUNG LED CO LTD5EASTMAN KODAK CO2SAMSUNG ELECTRONICS CO LTD2
Top patents by PatentIndex Score
96 records- 0198US7514720B2White light emitting deviceSAMSUNG ELECTRO MECH·Filed 2006·Granted Apr 7, 2009·83 cites·12 claims
- 0298US7138286B2Light-emitting semiconductor device using group III nitrogen compoundTOYODA GOSEI KK·Filed 2005·Granted Nov 21, 2006·47 cites·2 claims
- 0397US7491984B2Method for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devicesTOYODA GOSEI KK·Filed 2004·Granted Feb 17, 2009·170 cites·11 claims
- 0497US6645295B1Method for manufacturing group III nitride compound semiconductor and a light-emitting device using group III nitride compound semiconductorTOYODA GOSEI KK·Filed 2000·Granted Nov 11, 2003·112 cites·9 claims
- 0596US6040588ASemiconductor light-emitting deviceTOYODA GOSEI KK·Filed 1997·Granted Mar 21, 2000·112 cites·10 claims
- 0695US6420733B2Semiconductor light-emitting device and manufacturing method thereofTOYODA GOSEI KK·Filed 2001·Granted Jul 16, 2002·80 cites·7 claims
- 0795US6326236B1Semiconductor light-emitting device and manufacturing method thereofTOYODA GOSEI KK·Filed 2000·Granted Dec 4, 2001·78 cites·2 claims
- 0894US6620643B1Light-emitting device using group III nitride compound semiconductorTOYODA GOSEI KK·Filed 2000·Granted Sep 16, 2003·96 cites·19 claims
- 0994US6541293B2Semiconductor light-emitting device and manufacturing method thereofTOYODA GOSEI KK·Filed 2002·Granted Apr 1, 2003·63 cites·4 claims
- 1091US5945689ALight-emitting semiconductor device using group III nitride compoundTOYODA GOSEI KK·Filed 1996·Granted Aug 31, 1999·111 cites·39 claims
- 1191US5862167ALight-emitting semiconductor device using gallium nitride compoundTOYODA GOSEI KK·Filed 1997·Granted Jan 19, 1999·177 cites·5 claims
- 1291US5620557ASapphireless group III nitride semiconductor and method for making sameTOYODA GOSEI KK·Filed 1995·Granted Apr 15, 1997·139 cites·12 claims
- 1390US6631149B1Laser diode using group III nitride group compound semiconductorTOYODA GOSEI KK·Filed 2000·Granted Oct 7, 2003·33 cites·20 claims
- 1489US5959401ALight-emitting semiconductor device using group III nitride compoundTOYODA GOSEI KK·Filed 1997·Granted Sep 28, 1999·133 cites·13 claims
- 1588US7560725B2Method for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devicesTOYODA GOSEI KK·Filed 2005·Granted Jul 14, 2009·11 cites·9 claims
- 1687US7737429B2Nitride based semiconductor device using nanorods and process for preparing the sameSAMSUNG ELECTRO MECH·Filed 2005·Granted Jun 15, 2010·11 cites·7 claims
- 1787US6861305B2Methods for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devicesTOYODA GOSEI KK·Filed 2001·Granted Mar 1, 2005·34 cites·30 claims
- 1887US6821800B2Semiconductor light-emitting device and manufacturing method thereofTOYODA GOSEI KK·Filed 2002·Granted Nov 23, 2004·29 cites·4 claims
- 1987US6005258ALight-emitting semiconductor device using group III Nitrogen compound having emission layer doped with donor and acceptor impuritiesTOYODA GOSEI KK·Filed 1997·Granted Dec 21, 1999·69 cites·13 claims
- 2085US7645688B2Method of growing non-polar m-plane nitride semiconductorSAMSUNG ELECTRO MECH·Filed 2007·Granted Jan 12, 2010·12 cites·9 claims
- 2185US6552376B1Group III nitride compound semiconductor deviceTOYODA GOSEI KK·Filed 2000·Granted Apr 22, 2003·18 cites·15 claims
- 2285US6265726B1Light-emitting aluminum gallium indium nitride compound semiconductor device having an improved luminous intensityTOYODA GOSEI KK·Filed 1999·Granted Jul 24, 2001·62 cites·9 claims
- 2384US7935974B2White light emitting deviceSAMSUNG LED CO LTD·Filed 2009·Granted May 3, 2011·10 cites·8 claims
- 2484US6946788B2Light-emitting elementTOYODA GOSEI KK·Filed 2002·Granted Sep 20, 2005·42 cites·29 claims
- 2583US7867800B2Light-emitting semiconductor device using group III nitrogen compoundTOYODA GOSEI KK·Filed 2007·Granted Jan 11, 2011·5 cites·3 claims
- 2683US5700713ALight emitting semiconductor device using group III nitride compound and method of producing the sameTOYODA GOSEI KK·Filed 1995·Granted Dec 23, 1997·76 cites·10 claims
- 2782US7141444B2Production method of III nitride compound semiconductor and III nitride compound semiconductor elementTOYODA GOSEI KK·Filed 2001·Granted Nov 28, 2006·27 cites·10 claims
- 2881US7981714B2Nitride based semiconductor device using nanorods and process for preparing the sameSAMSUNG LED CO LTD·Filed 2009·Granted Jul 19, 2011·6 cites·10 claims
- 2981US7601621B2Method of forming surface irregularities and method of manufacturing gallium nitride-based light emitting diodeSAMSUNG ELECTRO MECH·Filed 2007·Granted Oct 13, 2009·12 cites·3 claims
- 3081US5652438ALight-emitting semiconductor device using group III nitride compoundTOYODA GOSEI KK·Filed 1995·Granted Jul 29, 1997·68 cites·26 claims
- 3180US7569461B2Method of fabricating nitride-based compound layer, GaN substrate and vertical structure nitride-based semiconductor light emitting deviceSAMSUNG ELECTRO MECH·Filed 2006·Granted Aug 4, 2009·6 cites·14 claims
- 3280US7524692B2Method of producing nitride layer and method of fabricating vertical structure nitride semiconductor light emitting deviceSAMSUNG ELECTRO MECH·Filed 2006·Granted Apr 28, 2009·7 cites·9 claims
- 3380US6471770B2Method of manufacturing semiconductor substrateTOYODA GOSEI KK·Filed 2000·Granted Oct 29, 2002·20 cites·10 claims
- 3480US5753939ALight-emitting semiconductor device using a Group III nitride compound and having a contact layer upon which an electrode is formedTOYODA GOSEI KK·Filed 1997·Granted May 19, 1998·80 cites·32 claims
- 3580US5604763AGroup III nitride compound semiconductor laser diode and method for producing sameTOYODA GOSEI KK·Filed 1995·Granted Feb 18, 1997·49 cites·8 claims
- 3679US6979584B2Method for producing group III nitride compound semiconductor and group III nitride compound semiconductor deviceTOYODA GOSEI KK·Filed 2000·Granted Dec 27, 2005·20 cites·18 claims
- 3777US7332366B2Light-emitting semiconductor device using group III nitrogen compoundTOYODA GOSEI KK·Filed 2006·Granted Feb 19, 2008·3 cites·2 claims
- 3877US6288416B1Light-emitting semiconductor device using group III nitride compoundTOYODA GOSEI KK·Filed 1999·Granted Sep 11, 2001·44 cites·16 claims
- 3976US6855620B2Method for fabricating Group III nitride compound semiconductor substrates and semiconductor devicesTOYODA GOSEI KK·Filed 2001·Granted Feb 15, 2005·20 cites·22 claims
- 4076US6679947B2Semiconductor substrateTOYODA GOSEI KK·Filed 2002·Granted Jan 20, 2004·15 cites·6 claims
- 4175US8026156B2Method of fabricating nitride-based compound layer, GaN substrate and vertical structure nitride-based semiconductor light emitting deviceSAMSUNG LED CO LTD·Filed 2009·Granted Sep 27, 2011·4 cites·8 claims
- 4275US5889806AGroup III nitride compound semiconductor laser diodesTOYODA GOSEI KK·Filed 1997·Granted Mar 30, 1999·39 cites·7 claims
- 4374US6680957B1Group III nitride compound semiconductor laserTOYODA GOSEI KK·Filed 2000·Granted Jan 20, 2004·12 cites·21 claims
- 4474US5650641ASemiconductor device having group III nitride compound and enabling control of emission color, and flat display comprising such deviceTOYODA GOSEI KK·Filed 1995·Granted Jul 22, 1997·56 cites·28 claims
- 4573US7683385B2Facet extraction LED and method for manufacturing the sameSAMSUNG ELECTRO MECH·Filed 2007·Granted Mar 23, 2010·3 cites·21 claims
- 4673US6541798B2Group III nitride compound semiconductor device and group III nitride compound semiconductor light-emitting deviceTOYODA GOSEI KK·Filed 2000·Granted Apr 1, 2003·18 cites·4 claims
- 4772US7163876B2Method for manufacturing group-III nitride compound semiconductor, and group-III nitride compound semiconductor deviceTOYOTA CHUO KENKYUSHO KK·Filed 2002·Granted Jan 16, 2007·15 cites·17 claims
- 4872US6830948B2Method for producing group III nitride compound semiconductor and group III nitride compound semiconductor deviceTOYODA GOSEI KK·Filed 2000·Granted Dec 14, 2004·15 cites·6 claims
- 4971US7084421B2Light-emitting device using group III nitride group compound semiconductorTOYODA GOSEI KK·Filed 2000·Granted Aug 1, 2006·20 cites·26 claims
- 5068US6645785B2Light-emitting semiconductor device using group III nitride compoundTOYODA GOSEI KK·Filed 2001·Granted Nov 11, 2003·11 cites·20 claims
Showing the top 50 of 96 patent records by PatentIndex Score.
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