Inventor · disambiguated record
James Mac Freitag
Also filed as: FREITAG JAMES · FREITAG JAMES M · FREITAG JAMES MAC
108 granted patents·23 pending applications·866 citations·filing 2001–2024
99Inventor score
Files withHITACHI GLOBAL STORAGE TECH50WESTERN DIGITAL TECH INC40HGST Netherlands BV13IBM5FREITAG JAMES M4
Top patents by PatentIndex Score
131 records- 0199US11283006B1Methods and apparatus of high moment free layers for magnetic tunnel junctionsWESTERN DIGITAL TECH INC·Filed 2020·Granted Mar 22, 2022·6 cites·29 claims
- 0299US10950260B1Magnetoresistive sensor with improved magnetic properties and magnetostriction controlWESTERN DIGITAL TECH INC·Filed 2020·Granted Mar 16, 2021·7 cites·20 claims
- 0399US10839833B1Spin transfer torque device with oxide layer beneath the seed layerWESTERN DIGITAL TECH INC·Filed 2020·Granted Nov 17, 2020·7 cites·20 claims
- 0498US10943611B1Spintronic devices with narrow spin polarization layersWESTERN DIGITAL TECH INC·Filed 2020·Granted Mar 9, 2021·14 cites·16 claims
- 0598US10867625B1Spin transfer torque (STT) device with template layer for Heusler alloy magnetic layersWESTERN DIGITAL TECH INC·Filed 2020·Granted Dec 15, 2020·16 cites·23 claims
- 0697US11289118B1Spintronic device having negative interface spin scatteringWESTERN DIGITAL TECH INC·Filed 2021·Granted Mar 29, 2022·11 cites·20 claims
- 0797US11127420B1Seed layer for spin torque oscillator in microwave assisted magnetic recording deviceWESTERN DIGITAL TECH INC·Filed 2019·Granted Sep 21, 2021·8 cites·12 claims
- 0896US12040114B2Magnetoresistive device comprising a synthetic antiferromagnetic coupling layer of RuAl having a (001) textureWESTERN DIGITAL TECH INC·Filed 2022·Granted Jul 16, 2024·2 cites·39 claims
- 0996US10762917B1Reversed mode spin torque oscillator with shaped field generation layerWESTERN DIGITAL TECH INC·Filed 2019·Granted Sep 1, 2020·20 cites·12 claims
- 1096US7580230B2Magnetoresistive sensor having shape enhanced pinning, a flux guide structure and damage free virtual edgesHITACHI GLOBAL STORAGE TECH·Filed 2006·Granted Aug 25, 2009·25 cites·5 claims
- 1196US7522391B2Current perpendicular to plane magnetoresistive sensor having a shape enhanced pinned layer and an in stack bias structureHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted Apr 21, 2009·32 cites·21 claims
- 1296US7369371B2Magnetoresistive sensor having a shape enhanced pinned layerHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted May 6, 2008·28 cites·21 claims
- 1395US11257514B2Magnetic recording devices having negative polarization layer to enhance spin-transfer torqueWESTERN DIGITAL TECH INC·Filed 2020·Granted Feb 22, 2022·5 cites·21 claims
- 1495US10997993B1Spin-torque oscillator with multilayer seed layer between the write pole and the free layer in a magnetic recording write headWESTERN DIGITAL TECH INC·Filed 2020·Granted May 4, 2021·5 cites·10 claims
- 1595US10950258B1Spin torque oscillator having one or more chromium insertion layers for magnetic recording drivesWESTERN DIGITAL TECH INC·Filed 2020·Granted Mar 16, 2021·6 cites·21 claims
- 1695US9099124B1Tunneling magnetoresistive (TMR) device with MgO tunneling barrier layer and nitrogen-containing layer for minimization of boron diffusionHGST Netherlands BV·Filed 2014·Granted Aug 4, 2015·30 cites·17 claims
- 1795US7848065B2Magnetoresistive sensor having an anisotropic hard bias with high coercivityHITACHI GLOBAL STORAGE TECH NL·Filed 2006·Granted Dec 7, 2010·23 cites·10 claims
- 1895US7466524B2Self-pinned spin valve sensor having its first AP pinned layer thicker than its second AP pinned layer to reduce the likelihood of amplitude flipHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted Dec 16, 2008·20 cites·8 claims
- 1993US10643643B1Spin torque oscillator device including a high damping field generation layer or a damping enhancing capping layerWESTERN DIGITAL TECH INC·Filed 2019·Granted May 5, 2020·12 cites·20 claims
- 2093US6785102B2Spin valve sensor with dual self-pinned AP pinned layer structuresHITACHI GLOBAL STORAGE TECH·Filed 2002·Granted Aug 31, 2004·41 cites·8 claims
- 2193US6636400B2Magnetoresistive head having improved hard biasing characteristics through the use of a multi-layered seed layer including an oxidized tantalum layer and a chromium layerIBM·Filed 2001·Granted Oct 21, 2003·39 cites·20 claims
- 2292US9734850B1Magnetic tunnel junction (MTJ) free layer damping reductionHGST Netherlands BV·Filed 2016·Granted Aug 15, 2017·9 cites·27 claims
- 2392US9001473B1TMR/CPP reader for narrow reader gap applicationHGST Netherlands BV·Filed 2014·Granted Apr 7, 2015·17 cites·20 claims
- 2492US6624985B1Pinning layer seeds for CPP geometry spin valve sensorsIBM·Filed 2002·Granted Sep 23, 2003·37 cites·24 claims
- 2591US8266785B2Method for manufacturing a magnetoresistive sensor having a novel junction structure for improved track width definition and pinned layer stabilityFREITAG JAMES MAC·Filed 2007·Granted Sep 18, 2012·14 cites·9 claims
- 2691US7602589B2Magnetoresistive sensor having shape enhanced pinning and low lead resistanceHITACHI GLOBAL STORAGE TECH·Filed 2006·Granted Oct 13, 2009·20 cites·14 claims
- 2789US9570100B1Two-dimensional magnetic recording device with center shield stabilized by recessed AFM layerHGST Netherlands BV·Filed 2015·Granted Feb 14, 2017·10 cites·21 claims
- 2889US9030785B2Narrow read-gap head with recessed afmHGST Netherlands BV·Filed 2013·Granted May 12, 2015·11 cites·28 claims
- 2989US8958180B1Capping materials for magnetic read head sensorHGST Netherlands BV·Filed 2013·Granted Feb 17, 2015·10 cites·18 claims
- 3089US7663846B2Magnetoresistive sensor having an enhanced lead overlay design and shape enhanced pinningHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted Feb 16, 2010·17 cites·34 claims
- 3189US7564659B2Magnetoresistive sensor having an anisotropic pinned layer for pinning improvementHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted Jul 21, 2009·16 cites·18 claims
- 3289US7420787B2Magnetoresistive sensor having a shape enhanced pinned layerHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted Sep 2, 2008·17 cites·8 claims
- 3387US7502209B2Read sensors having nitrogenated hard bias layers and method of making the sameHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted Mar 10, 2009·7 cites·12 claims
- 3486US6751072B2High magnetoresistance spin valve sensor with self-pinned antiparallel (AP) pinned layer structureHITACHI GLOBAL STORAGE TECH·Filed 2002·Granted Jun 15, 2004·18 cites·13 claims
- 3586US6744607B2Exchange biased self-pinned spin valve sensor with recessed overlaid leadsHITACHI GLOBAL STORAGE TECH·Filed 2002·Granted Jun 1, 2004·21 cites·18 claims
- 3685US10566015B2Spin transfer torque (STT) device with template layer for heusler alloy magnetic layersWESTERN DIGITAL TECH INC·Filed 2018·Granted Feb 18, 2020·8 cites·20 claims
- 3785US7652855B2Magnetic sensor with extended free layer and overlaid leadsHITACHI GLOBAL STORAGE TECH·Filed 2006·Granted Jan 26, 2010·6 cites·17 claims
- 3885US7616409B2Magnetic sensor having a Ru/Si based seedlayer providing improved free layer biasingHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted Nov 10, 2009·6 cites·4 claims
- 3984US11211083B1MAMR head with synthetic antiferromagnetic (SAF) coupled notchWESTERN DIGITAL TECH INC·Filed 2020·Granted Dec 28, 2021·2 cites·21 claims
- 4084US9318133B2Recessed antiferromagnetic design with antiparallel pinned stitch layers for improved pinning fieldHGST Netherlands BV·Filed 2013·Granted Apr 19, 2016·7 cites·17 claims
- 4184US7280314B2Lower saturation field structure for perpendicular AFC poleHITACHI GLOBAL STORAGE TECH·Filed 2004·Granted Oct 9, 2007·17 cites·22 claims
- 4283US7177120B2Self-pinned spin valve sensor with a high coercivity antiparallel (AP) pinned layerHITACHI GLOBAL STORAGE TECH·Filed 2003·Granted Feb 13, 2007·16 cites·23 claims
- 4383US7082017B2High magnetoresistance spin valve sensor with self-pinned antiparallel (AP) pinned layer structureHITACHI GLOBAL STORAGE TECH·Filed 2004·Granted Jul 25, 2006·14 cites·10 claims
- 4482US10460752B2Spin-torque oscillator with multilayer seed layer between the write pole and the free layer in a magnetic recording write headWESTERN DIGITAL TECH INC·Filed 2018·Granted Oct 29, 2019·5 cites·27 claims
- 4582US7900342B2Methods of fabricating magnetoresistance sensors pinned by an etch induced magnetic anisotropyHITACHI GLOBAL STORAGE TECH NL·Filed 2007·Granted Mar 8, 2011·7 cites·16 claims
- 4682US7440243B2Read sensors of the CPP type having nitrogenated hard bias layers and method of making the sameHITACHI GLOBAL STORAGE TECH·Filed 2007·Granted Oct 21, 2008·4 cites·12 claims
- 4782US7436629B2Laminated magnetic structure for use in a perpendicular magnetic write headHITACHI GLOBAL STORAGE TECH·Filed 2007·Granted Oct 14, 2008·4 cites·20 claims
- 4882US7433163B2Seedlayer for high hard bias layer coercivityHITACHI GLOBAL STORAGE TECH·Filed 2006·Granted Oct 7, 2008·4 cites·22 claims
- 4981US11881236B2Spin torque oscillator with enhanced spin polarizerWESTERN DIGITAL TECH INC·Filed 2022·Granted Jan 23, 2024·1 cites·22 claims
- 5080US7505235B2Method and apparatus for providing magnetostriction control in a freelayer of a magnetic memory deviceHITACHI GLOBAL STORAGE TECH·Filed 2007·Granted Mar 17, 2009·6 cites·21 claims
Showing the top 50 of 131 patent records by PatentIndex Score.
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