Inventor · disambiguated record
Taylor R. Efland
Also filed as: EFLAND TAYLOR · EFLAND TAYLOR R · EFLAND TAYLOR RICE
75 granted patents·6 pending applications·3,472 citations·filing 1989–2014
99Inventor score
Files withTEXAS INSTRUMENTS INC71DENISON MARIE3AMARO MICHAEL G1KOCON CHRISTOPHER BOGUSLAW1KODURI SREENIVASAN K1
Top patents by PatentIndex Score
81 records- 0198US7268045B2N-channel LDMOS with buried P-type region to prevent parasitic bipolar effectsTEXAS INSTRUMENTS INC·Filed 2005·Granted Sep 11, 2007·66 cites·6 claims
- 0298US6683380B2Integrated circuit with bonding layer over active circuitryTEXAS INSTRUMENTS INC·Filed 2002·Granted Jan 27, 2004·274 cites·11 claims
- 0396US6144100AIntegrated circuit with bonding layer over active circuitryTEXAS INSTRUMENTS INC·Filed 1997·Granted Nov 7, 2000·256 cites·17 claims
- 0496US5468984AESD protection structure using LDMOS diodes with thick copper interconnectTEXAS INSTRUMENTS INC·Filed 1994·Granted Nov 21, 1995·309 cites·2 claims
- 0595US6958515B2N-channel LDMOS with buried p-type region to prevent parasitic bipolar effectsTEXAS INSTRUMENTS INC·Filed 2001·Granted Oct 25, 2005·84 cites·8 claims
- 0694US8173510B2Lateral drain-extended MOSFET having channel along sidewall of drain extension dielectricDENISON MARIE·Filed 2011·Granted May 8, 2012·19 cites·14 claims
- 0794US7888732B2Lateral drain-extended MOSFET having channel along sidewall of drain extension dielectricTEXAS INSTRUMENTS INC·Filed 2008·Granted Feb 15, 2011·26 cites·24 claims
- 0894US6424005B1LDMOS power device with oversized dwellTEXAS INSTRUMENTS INC·Filed 1998·Granted Jul 23, 2002·140 cites·11 claims
- 0994US6137140AIntegrated SCR-LDMOS power deviceTEXAS INSTRUMENTS INC·Filed 1998·Granted Oct 24, 2000·137 cites·14 claims
- 1094US6020640AThick plated interconnect and associated auxillary interconnectTEXAS INSTRUMENTS INC·Filed 1997·Granted Feb 1, 2000·174 cites·10 claims
- 1193US8253193B2MOS transistor with gate trench adjacent to drain extension field insulationDENISON MARIE·Filed 2011·Granted Aug 28, 2012·14 cites·6 claims
- 1293US6395593B1Method of manufacturing high side and low side guard rings for lowest parasitic performance in an H-bridge configurationTEXAS INSTRUMENTS INC·Filed 2000·Granted May 28, 2002·72 cites·15 claims
- 1392US5346835ATriple diffused lateral resurf insulated gate field effect transistor compatible with process and methodTEXAS INSTRUMENTS INC·Filed 1993·Granted Sep 13, 1994·97 cites·11 claims
- 1491US6548874B1Higher voltage transistors for sub micron CMOS processesTEXAS INSTRUMENTS INC·Filed 2000·Granted Apr 15, 2003·86 cites·32 claims
- 1591US6211552B1Resurf LDMOS device with deep drain regionTEXAS INSTRUMENTS INC·Filed 1999·Granted Apr 3, 2001·122 cites·9 claims
- 1690US7060607B2Circuit method integrating the power distribution functions of the circuits and leadframes into the chip surfaceTEXAS INSTRUMENTS INC·Filed 2005·Granted Jun 13, 2006·17 cites·4 claims
- 1790US5859456AMultiple transistor integrated circuit with thick copper interconnectTEXAS INSTRUMENTS INC·Filed 1996·Granted Jan 12, 1999·84 cites·18 claims
- 1890US5306652ALateral double diffused insulated gate field effect transistor fabrication processTEXAS INSTRUMENTS INC·Filed 1991·Granted Apr 26, 1994·67 cites·27 claims
- 1989US8124482B2MOS transistor with gate trench adjacent to drain extension field insulationDENISON MARIE·Filed 2011·Granted Feb 28, 2012·9 cites·7 claims
- 2089US6441431B1Lateral double diffused metal oxide semiconductor deviceTEXAS INSTRUMENTS INC·Filed 1999·Granted Aug 27, 2002·74 cites·17 claims
- 2188US8928075B2Power integrated circuit including series-connected source substrate and drain substrate power MOSFETsKOCON CHRISTOPHER BOGUSLAW·Filed 2012·Granted Jan 6, 2015·9 cites·13 claims
- 2288US7514329B2Robust DEMOS transistors and method for making the sameTEXAS INSTRUMENTS INC·Filed 2006·Granted Apr 7, 2009·15 cites·26 claims
- 2388US5406110AResurf lateral double diffused insulated gate field effect transistorTEXAS INSTRUMENTS INC·Filed 1994·Granted Apr 11, 1995·58 cites·24 claims
- 2487US6372586B1Method for LDMOS transistor with thick copper interconnectTEXAS INSTRUMENTS INC·Filed 2000·Granted Apr 16, 2002·52 cites·1 claims
- 2587US6025275AMethod of forming improved thick plated copper interconnect and associated auxiliary metal interconnectTEXAS INSTRUMENTS INC·Filed 1997·Granted Feb 15, 2000·90 cites·23 claims
- 2686US5119162AIntegrated power DMOS circuit with protection diodeTEXAS INSTRUMENTS INC·Filed 1989·Granted Jun 2, 1992·51 cites·3 claims
- 2785US6531355B2LDMOS device with self-aligned RESURF region and method of fabricationTEXAS INSTRUMENTS INC·Filed 1999·Granted Mar 11, 2003·63 cites·2 claims
- 2884US6597065B1Thermally enhanced semiconductor chip having integrated bonds over active circuitsTEXAS INSTRUMENTS INC·Filed 2001·Granted Jul 22, 2003·32 cites·24 claims
- 2984US6160290AReduced surface field device having an extended field plate and method for forming the sameTEXAS INSTRUMENTS INC·Filed 1998·Granted Dec 12, 2000·49 cites·16 claims
- 3083US6729886B2Method of fabricating a drain isolated LDMOS deviceTEXAS INSTRUMENTS INC·Filed 2002·Granted May 4, 2004·34 cites·8 claims
- 3183US6468837B1Reduced surface field device having an extended field plate and method for forming the sameTEXAS INSTRUMENTS INC·Filed 2000·Granted Oct 22, 2002·28 cites·17 claims
- 3282US5736766AMedium voltage LDMOS device and method of fabricationTEXAS INSTRUMENTS INC·Filed 1994·Granted Apr 7, 1998·51 cites·6 claims
- 3381US6468849B1Methods and devices for optimized digital and analog CMOS transistor performance in deep submicron technologyTEXAS INSTRUMENTS INC·Filed 2000·Granted Oct 22, 2002·24 cites·7 claims
- 3480US7893499B2MOS transistor with gate trench adjacent to drain extension field insulationTEXAS INSTRUMENTS INC·Filed 2009·Granted Feb 22, 2011·6 cites·6 claims
- 3580US7238986B2Robust DEMOS transistors and method for making the sameTEXAS INSTRUMENTS INC·Filed 2004·Granted Jul 3, 2007·24 cites·26 claims
- 3680US6483149B1LDMOS device with self-aligned resurf region and method of fabricationTEXAS INSTRUMENTS INC·Filed 1997·Granted Nov 19, 2002·47 cites·6 claims
- 3780US5728594AMethod of making a multiple transistor integrated circuit with thick copper interconnectTEXAS INSTRUMENTS INC·Filed 1995·Granted Mar 17, 1998·43 cites·1 claims
- 3879US9076671B2Power integrated circuit including series-connected source substrate and drain substrate power mosfetsTEXAS INSTRUMENTS INC·Filed 2014·Granted Jul 7, 2015·4 cites·7 claims
- 3978US6873021B1MOS transistors having higher drain current without reduced breakdown voltageTEXAS INSTRUMENTS INC·Filed 2003·Granted Mar 29, 2005·26 cites·20 claims
- 4077US7135759B2Individualized low parasitic power distribution lines deposited over active integrated circuitsTEXAS INSTRUMENTS INC·Filed 2001·Granted Nov 14, 2006·21 cites·26 claims
- 4177US5869882AZener diode structure with high reverse breakdown voltageTEXAS INSTRUMENTS INC·Filed 1996·Granted Feb 9, 1999·41 cites·9 claims
- 4276US5812006AOptimized power output clamping structureTEXAS INSTRUMENTS INC·Filed 1996·Granted Sep 22, 1998·30 cites·18 claims
- 4375US6413824B1Method to partially or completely suppress pocket implant in selective circuit elements with no additional mask in a cmos flow where separate masking steps are used for the drain extension implants for the low voltage and high voltage transistorsTEXAS INSTRUMENTS INC·Filed 2000·Granted Jul 2, 2002·21 cites·17 claims
- 4474US7514292B2Individualized low parasitic power distribution lines deposited over active integrated circuitsTEXAS INSTRUMENTS INC·Filed 2006·Granted Apr 7, 2009·5 cites·5 claims
- 4574US6753575B2Tank-isolated-drain-extended power deviceTEXAS INSTRUMENTS INC·Filed 2002·Granted Jun 22, 2004·20 cites·15 claims
- 4674US5744843ACMOS power device and method of construction and layoutTEXAS INSTRUMENTS INC·Filed 1996·Granted Apr 28, 1998·48 cites·25 claims
- 4773US7045903B2Integrated power circuits with distributed bonding and current flowTEXAS INSTRUMENTS INC·Filed 2001·Granted May 16, 2006·19 cites·21 claims
- 4873US6680226B2Methods and devices for optimized digital and analog CMOS transistor performance in deep submicron technologyTEXAS INSTRUMENTS INC·Filed 2002·Granted Jan 20, 2004·15 cites·3 claims
- 4972US6160388ASensing of current in a synchronous-buck power stageTEXAS INSTRUMENTS INC·Filed 1998·Granted Dec 12, 2000·46 cites·12 claims
- 5071US7195965B2Premature breakdown in submicron device geometriesTEXAS INSTRUMENTS INC·Filed 2002·Granted Mar 27, 2007·14 cites·4 claims
Showing the top 50 of 81 patent records by PatentIndex Score.
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