Inventor · disambiguated record
Paul Hashimoto
Also filed as: HASHIMOTO PAUL · HASHIMOTO PAUL B
16 granted patents·1 pending application·198 citations·filing 2002–2014
94Inventor score
Top patents by PatentIndex Score
17 records- 0194US8383471B1Self aligned sidewall gate GaN HEMTHRL LAB LLC·Filed 2011·Granted Feb 26, 2013·28 cites·27 claims
- 0291US8748244B1Enhancement and depletion mode GaN HMETs on the same substrateCORRION ANDREA·Filed 2012·Granted Jun 10, 2014·15 cites·6 claims
- 0390US8686473B1Apparatus and method for reducing the interface resistance in GaN heterojunction FETsMICOVIC MIROSLAV·Filed 2010·Granted Apr 1, 2014·14 cites·11 claims
- 0490US7598131B1High power-low noise microwave GaN heterojunction field effect transistorHRL LAB LLC·Filed 2008·Granted Oct 6, 2009·20 cites·42 claims
- 0585US9252247B1Apparatus and method for reducing the interface resistance in GaN Heterojunction FETsHRL LAB LLC·Filed 2014·Granted Feb 2, 2016·6 cites·15 claims
- 0680US7470941B2High power-low noise microwave GaN heterojunction field effect transistorHRL LAB LLC·Filed 2002·Granted Dec 30, 2008·27 cites·33 claims
- 0778US6852615B2Ohmic contacts for high electron mobility transistors and a method of making the sameHRL LAB LLC·Filed 2003·Granted Feb 8, 2005·27 cites·31 claims
- 0876US7098490B2GaN DHFETHRL LAB LLC·Filed 2004·Granted Aug 29, 2006·20 cites·20 claims
- 0975US7700974B2Process for fabricating ultra-low contact resistances in GaN-based devicesHRL LAB LLC·Filed 2005·Granted Apr 20, 2010·6 cites·16 claims
- 1074US6897137B2Process for fabricating ultra-low contact resistances in GaN-based devicesHRL LAB LLC·Filed 2003·Granted May 24, 2005·16 cites·16 claims
- 1169US6884704B2Ohmic metal contact and channel protection in GaN devices using an encapsulation layerHRL LAB LLC·Filed 2003·Granted Apr 26, 2005·10 cites·24 claims
- 1268US8766321B2Self-aligned sidewall gate GaN HEMTHRL LAB·Filed 2012·Granted Jul 1, 2014·2 cites·6 claims
- 1359US6830945B2Method for fabricating a non-planar nitride-based heterostructure field effect transistorHRL LAB LLC·Filed 2003·Granted Dec 14, 2004·5 cites·44 claims
- 1457US8030688B2Ohmic metal contact protection using an encapsulation layerHRL LAB LLC·Filed 2009·Granted Oct 4, 2011·0 cites·21 claims
- 1548US7247893B2Non-planar nitride-based heterostructure field effect transistorHRL LAB LLC·Filed 2004·Granted Jul 24, 2007·1 cites·15 claims
- 1647US7566916B2Ohmic metal contact and channel protection in GaN devices using an encapsulation layerHRL LAB LLC·Filed 2004·Granted Jul 28, 2009·1 cites·14 claims
- 1730US2004021152A1Ga/A1GaN Heterostructure Field Effect Transistor with dielectric recessed gateFiled 2002·Application pending·0 cites
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