Inventor · disambiguated record
Tzong-Sheng Chang
Also filed as: CHANG TZONG-SHENG
36 granted patents·1 pending application·460 citations·filing 1997–2021
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG17TAIWAN SEMICONDUCTOR MFG CO LTD17LI LIH-PING1LIN CHENG-TE1TAIWAN SEMICONDUCTOR MANUFACTRING COMPANY LTD1
Top patents by PatentIndex Score
37 records- 0192US10515902B2Back-end-of-line (BEOL) arrangement with multi-height interlayer dielectric (ILD) structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·6 cites·20 claims
- 0292US5817562AMethod for making improved polysilicon FET gate electrode structures and sidewall spacers for more reliable self-aligned contacts (SAC)TAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Oct 6, 1998·147 cites·24 claims
- 0385US10073354B2Exposure method of wafer substrate, manufacturing method of semiconductor device, and exposure toolTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 11, 2018·3 cites·20 claims
- 0485US5807786AMethod of making a barrier layer to protect programmable antifuse structure from damage during fabrication sequenceTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Sep 15, 1998·78 cites·27 claims
- 0582US11003091B2Method of fabricating reticleTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 11, 2021·1 cites·20 claims
- 0682US10957653B2Methods for manufacturing semiconductor arrangements using photoresist masksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 23, 2021·2 cites·20 claims
- 0781US6294448B1Method to improve TiSix salicide formationTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Sep 25, 2001·31 cites·27 claims
- 0880US9831130B2Method for forming semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 28, 2017·3 cites·20 claims
- 0979US9122828B2Apparatus and method for designing an integrated circuit layout having a plurality of cell technologiesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Sep 1, 2015·5 cites·18 claims
- 1078US9870998B2Semiconductor arrangement having an overlay alignment mark with a height shorter than a neighboring gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 16, 2018·2 cites·20 claims
- 1177US10534272B2Method of fabricating reticleTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·1 cites·20 claims
- 1276US6348389B1Method of forming and etching a resist protect oxide layer including end-point etchTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Feb 19, 2002·49 cites·6 claims
- 1375US11940737B2Method of fabricating reticleTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 26, 2024·0 cites·20 claims
- 1473US9178066B2Methods for forming a semiconductor arrangement with structures having different heightsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 3, 2015·2 cites·20 claims
- 1570US6004841AFabrication process for MOSFET devices and a reproducible capacitor structureTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Dec 21, 1999·26 cites·9 claims
- 1669US9508590B2Methods and apparatus of metal gate transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 29, 2016·1 cites·20 claims
- 1769US8741726B2Reacted layer for improving thickness uniformity of strained structuresLIN CHENG-TE·Filed 2011·Granted Jun 3, 2014·2 cites·20 claims
- 1867US11653503B2Semiconductor structure with data storage structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 16, 2023·0 cites·20 claims
- 1967US5792681AFabrication process for MOSFET devices and a reproducible capacitor structureTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Aug 11, 1998·25 cites·11 claims
- 2066US11011419B2Method for forming interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 18, 2021·0 cites·20 claims
- 2166US7998772B2Method to reduce leakage in a protection diode structureTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Aug 16, 2011·3 cites·14 claims
- 2263US7663164B2Semiconductor device with reduced leakage protection diodeTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Feb 16, 2010·3 cites·10 claims
- 2362US9679818B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jun 13, 2017·1 cites·20 claims
- 2458US7015129B2Bond pad scheme for Cu processTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Mar 21, 2006·7 cites·20 claims
- 2558US6191018B1Method for selective resistivity adjustment of polycide lines for enhanced design flexibility and improved space utilization in sub-micron integrated circuitsTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Feb 20, 2001·19 cites·12 claims
- 2657US10763305B2Semiconductor structure with data storage structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 1, 2020·0 cites·20 claims
- 2757US6004829AMethod of increasing end point detection capability of reactive ion etching by adding pad areaTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Dec 21, 1999·21 cites·7 claims
- 2855US10629481B2Method for forming interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 21, 2020·0 cites·20 claims
- 2952US9190319B2Method for forming interconnect structureTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 17, 2015·0 cites·19 claims
- 3052US6346449B1Non-distort spacer profile during subsequent processingTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Feb 12, 2002·13 cites·11 claims
- 3151US10090360B2Method of manufacturing a semiconductor structure including a plurality of trenchesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 2, 2018·0 cites·18 claims
- 3251US9716034B2Method for forming interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 25, 2017·0 cites·20 claims
- 3349US6844626B2Bond pad scheme for Cu processTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Jan 18, 2005·3 cites·13 claims
- 3448US9252259B2Methods and apparatus of metal gate transistorsTAIWAN SEMICONDUCTOR MANUFACTRING COMPANY LTD·Filed 2013·Granted Feb 2, 2016·0 cites·20 claims
- 3545US8860151B2Semiconductor device having a spacer and a liner overlying a sidewall of a gate structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 14, 2014·0 cites·20 claims
- 3639US6284611B1Method for salicide process using a titanium nitride barrier layerTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Sep 4, 2001·6 cites·9 claims
- 3737US2006205232A1Film treatment method preventing blocked etch of low-K dielectricsLI LIH-PING·Filed 2005·Application pending·0 cites
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