Inventor · disambiguated record
Janusz Bogdanowicz
Also filed as: BOGDANOWICZ JANUSZ
7 granted patents·1 pending application·1 citations·filing 2008–2021
69Inventor score
Top patents by PatentIndex Score
8 records- 0149US2010002236A1Method for determining the doping profile of a partially activated doped semiconductor regionIMEC INTER UNI MICRO ELECTR·Filed 2009·Application pending·0 cites
- 0247US8717570B2Method for determining the active doping concentration of a doped semiconductor regionIMEC·Filed 2012·Granted May 6, 2014·0 cites·10 claims
- 0347US7751035B2Method and device to quantify active carrier profiles in ultra-shallow semiconductor structuresIMEC·Filed 2008·Granted Jul 6, 2010·1 cites·24 claims
- 0445US8817262B2Method for determining the doping profile of a partially activated doped semiconductor regionIMEC·Filed 2012·Granted Aug 26, 2014·0 cites·17 claims
- 0544US8634080B2Method for determining an active dopant concentration profileIMEC·Filed 2013·Granted Jan 21, 2014·0 cites·19 claims
- 0641US12216057B2Method and apparatus for measuring a lateral depth in a microstructureIMEC VZW·Filed 2021·Granted Feb 4, 2025·0 cites·10 claims
- 0739US10014178B2Method for differential heating of elongate nano-scaled structuresIMEC VZW·Filed 2016·Granted Jul 3, 2018·0 cites·16 claims
- 0834US8384904B2Method and apparatus for determining the junction depth of a semiconductor regionIMEC·Filed 2010·Granted Feb 26, 2013·0 cites·22 claims
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