Inventor · disambiguated record
Bernard Aspar
Also filed as: ASPAR BERNARD
75 granted patents·15 pending applications·4,396 citations·filing 1995–2024
99Inventor score
Files withCOMMISSARIAT ENERGIE ATOMIQUE44SOITEC SILICON ON INSULATOR17ASPAR BERNARD6TRACIT TECHNOLOGIES4MORICEAU HUBERT3
Top patents by PatentIndex Score
90 records- 0198US7067396B2Method of producing a thin layer of semiconductor materialCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2004·Granted Jun 27, 2006·309 cites·16 claims
- 0298US6809009B2Method of producing a thin layer of semiconductor materialCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2001·Granted Oct 26, 2004·363 cites·16 claims
- 0398US6809044B1Method for making a thin film using pressurizationCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2000·Granted Oct 26, 2004·184 cites·20 claims
- 0498US6756286B1Method for transferring a thin film comprising a step of generating inclusionsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1998·Granted Jun 29, 2004·263 cites·19 claims
- 0598US6103597AMethod of obtaining a thin film of semiconductor materialCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1997·Granted Aug 15, 2000·399 cites·11 claims
- 0698US6020252AMethod of producing a thin layer of semiconductor materialCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1997·Granted Feb 1, 2000·619 cites·15 claims
- 0797US7498234B2Method of producing a thin layer of semiconductor materialCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2006·Granted Mar 3, 2009·34 cites·26 claims
- 0897US6946365B2Method for producing a thin film comprising introduction of gaseous speciesCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2001·Granted Sep 20, 2005·163 cites·19 claims
- 0997US6303468B1Method for making a thin film of solid materialCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1998·Granted Oct 16, 2001·271 cites·19 claims
- 1097US6225192B1Method of producing a thin layer of semiconductor materialCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1999·Granted May 1, 2001·234 cites·30 claims
- 1195US7883994B2Process for the transfer of a thin filmCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2007·Granted Feb 8, 2011·21 cites·9 claims
- 1295US6190998B1Method for achieving a thin film of solid material and applications of this methodCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1997·Granted Feb 20, 2001·185 cites·18 claims
- 1394US6335258B1Method for making a thin film on a support and resulting structure including an additional thinning stage before heat treatment causes micro-cavities to separate substrate elementCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1997·Granted Jan 1, 2002·174 cites·11 claims
- 1491US6974759B2Method for making a stacked comprising a thin film adhering to a target substrateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2001·Granted Dec 13, 2005·46 cites·26 claims
- 1591US6756285B1Multilayer structure with controlled internal stresses and making sameCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2000·Granted Jun 29, 2004·86 cites·17 claims
- 1691US6465327B1Method for producing a thin membrane and resulting structure with membraneCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2000·Granted Oct 15, 2002·61 cites·24 claims
- 1790US8609514B2Process for the transfer of a thin film comprising an inclusion creation stepCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Dec 17, 2013·6 cites·14 claims
- 1890US7713369B2Detachable substrate or detachable structure and method for the production thereofCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2002·Granted May 11, 2010·48 cites·18 claims
- 1990US6204079B1Selective transfer of elements from one support to another supportCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1999·Granted Mar 20, 2001·120 cites·23 claims
- 2089US6403450B1Heat treatment method for semiconductor substratesCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1999·Granted Jun 11, 2002·101 cites·21 claims
- 2188US7902038B2Detachable substrate with controlled mechanical strength and method of producing sameCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2002·Granted Mar 8, 2011·50 cites·19 claims
- 2287US7229899B2Process for the transfer of a thin filmCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2003·Granted Jun 12, 2007·25 cites·26 claims
- 2387US6821376B1Method for separating two elements and a device thereforCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2000·Granted Nov 23, 2004·50 cites·42 claims
- 2486US8679946B2Manufacturing process for a stacked structure comprising a thin layer bonding to a target substrateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Mar 25, 2014·5 cites·28 claims
- 2585US8101503B2Method of producing a thin layer of semiconductor materialASPAR BERNARD·Filed 2008·Granted Jan 24, 2012·6 cites·14 claims
- 2685US7807482B2Method for transferring wafersSOITEC SILICON ON INSULATOR·Filed 2005·Granted Oct 5, 2010·11 cites·60 claims
- 2785US6316333B1Method for obtaining a thin film in particular semiconductor, comprising a protected ion zone and involving an ion implantationCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1998·Granted Nov 13, 2001·76 cites·10 claims
- 2885US2024396520A1Heterostructure and method of fabricationSOITEC SILICON ON INSULATOR·Filed 2024·Application pending·0 cites
- 2984US8628674B2Method for trimming a structure obtained by the assembly of two platesSOITEC SILICON ON INSULATOR·Filed 2012·Granted Jan 14, 2014·6 cites·9 claims
- 3084US8470712B2Process for the transfer of a thin film comprising an inclusion creation stepMORICEAU HUBERT·Filed 2010·Granted Jun 25, 2013·4 cites·24 claims
- 3183US11637542B2Heterostructure and method of fabricationSOITEC SILICON ON INSULATOR·Filed 2020·Granted Apr 25, 2023·1 cites·23 claims
- 3283US7494897B2Method of producing mixed substrates and structure thus obtainedCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2003·Granted Feb 24, 2009·29 cites·31 claims
- 3381US6362077B1Structure comprising a thin layer of material made up of conductive zones and insulating zones and a method of manufacturing such a structureCOMMISSARIAT A L ATOMIQUE·Filed 1999·Granted Mar 26, 2002·62 cites·25 claims
- 3480US12101080B2Heterostructure and method of fabricationSOITEC SILICON ON INSULATOR·Filed 2023·Granted Sep 24, 2024·0 cites·19 claims
- 3580US11043756B2Structure for radio frequency applicationsSOITEC SILICON ON INSULATOR·Filed 2018·Granted Jun 22, 2021·2 cites·18 claims
- 3680US10826459B2Heterostructure and method of fabricationSOITEC SILICON ON INSULATOR·Filed 2016·Granted Nov 3, 2020·2 cites·13 claims
- 3780US7498245B2Embrittled substrate and method for making sameCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2001·Granted Mar 3, 2009·25 cites·29 claims
- 3880US7029548B2Method for cutting a block of material and forming a thin filmCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2001·Granted Apr 18, 2006·28 cites·13 claims
- 3979US8481409B2Manufacturing process for a stacked structure comprising a thin layer bonding to a target substrateMORICEAU HUBERT·Filed 2005·Granted Jul 9, 2013·5 cites·15 claims
- 4078US8722515B2Process of treating defects during the bonding of wafersSOITEC SILICON ON INSULATOR·Filed 2013·Granted May 13, 2014·3 cites·22 claims
- 4178US8329048B2Method for trimming a structure obtained by the assembly of two platesZUSSY MARC·Filed 2005·Granted Dec 11, 2012·9 cites·8 claims
- 4277US7205211B2Method for handling semiconductor layers in such a way as to thin sameCOMMISARIAT L EN ATOMIQUE·Filed 2003·Granted Apr 17, 2007·25 cites·27 claims
- 4376US12418120B2Structure for radio frequency applicationsSOITEC SILICON ON INSULATOR·Filed 2022·Granted Sep 16, 2025·0 cites·21 claims
- 4476US7737000B2Process for the collective fabrication of microstructures consisting of superposed elementsE2V SEMICONDUCTORS·Filed 2005·Granted Jun 15, 2010·8 cites·20 claims
- 4576US6197695B1Process for the manufacture of passive and active components on the same insulating substrateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1999·Granted Mar 6, 2001·51 cites·32 claims
- 4675US8530334B2Process of treating defects during the bonding of wafersLAGAHE CHRYSTELLE·Filed 2009·Granted Sep 10, 2013·6 cites·29 claims
- 4774US8158487B2Annealing process for annealing a structureSOUSBIE NICOLAS·Filed 2011·Granted Apr 17, 2012·5 cites·13 claims
- 4874US7615463B2Method for making thin layers containing microcomponentsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2002·Granted Nov 10, 2009·19 cites·17 claims
- 4974US6959863B2Method for selectively transferring at least an element from an initial support onto a final supportCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2002·Granted Nov 1, 2005·26 cites·27 claims
- 5072US11502428B2Structure for radio frequency applicationsSOITEC SILICON ON INSULATOR·Filed 2021·Granted Nov 15, 2022·0 cites·20 claims
Showing the top 50 of 90 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →