Inventor · disambiguated record
Philip J. Tobin
Also filed as: TOBIN PHILIP · TOBIN PHILIP J
52 granted patents·5 pending applications·4,844 citations·filing 1983–2007
99Inventor score
Top patents by PatentIndex Score
57 records- 0198US6063698AMethod for manufacturing a high dielectric constant gate oxide for use in semiconductor integrated circuitsMOTOROLA INC·Filed 1997·Granted May 16, 2000·231 cites·20 claims
- 0297US6027961ACMOS semiconductor devices and method of formationMOTOROLA INC·Filed 1998·Granted Feb 22, 2000·358 cites·17 claims
- 0397US6020024AMethod for forming high dielectric constant metal oxidesMOTOROLA INC·Filed 1997·Granted Feb 1, 2000·461 cites·26 claims
- 0497US4570328AMethod of producing titanium nitride MOS device gate electrodeMOTOROLA INC·Filed 1983·Granted Feb 18, 1986·676 cites·9 claims
- 0596US6432779B1Selective removal of a metal oxide dielectricMOTOROLA INC·Filed 2001·Granted Aug 13, 2002·139 cites·2 claims
- 0696US6362071B1Method for forming a semiconductor device with an opening in a dielectric layerMOTOROLA INC·Filed 2000·Granted Mar 26, 2002·149 cites·20 claims
- 0796US5972804AProcess for forming a semiconductor deviceMOTOROLA INC·Filed 1997·Granted Oct 26, 1999·181 cites·15 claims
- 0896US4987102AProcess for forming high purity thin filmsMOTOROLA INC·Filed 1989·Granted Jan 22, 1991·432 cites·20 claims
- 0995US5552332AProcess for fabricating a MOSFET device having reduced reverse short channel effectsMOTOROLA INC·Filed 1995·Granted Sep 3, 1996·160 cites·19 claims
- 1095US5464792AProcess to incorporate nitrogen at an interface of a dielectric layer in a semiconductor deviceMOTOROLA INC·Filed 1994·Granted Nov 7, 1995·122 cites·19 claims
- 1195US4548654ASurface denuding of silicon waferMOTOROLA INC·Filed 1983·Granted Oct 22, 1985·109 cites·14 claims
- 1294US5407870AProcess for fabricating a semiconductor device having a high reliability dielectric materialMOTOROLA INC·Filed 1993·Granted Apr 18, 1995·113 cites·16 claims
- 1392US6894353B2Capped dual metal gate transistors for CMOS process and method for making the sameFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted May 17, 2005·70 cites·9 claims
- 1491US7091568B2Electronic device including dielectric layer, and a process for forming the electronic deviceFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Aug 15, 2006·59 cites·20 claims
- 1591US6383873B1Process for forming a structureMOTOROLA INC·Filed 2000·Granted May 7, 2002·66 cites·12 claims
- 1691US5726087AMethod of formation of semiconductor gate dielectricMOTOROLA INC·Filed 1994·Granted Mar 10, 1998·89 cites·14 claims
- 1791US5712208AMethods of formation of semiconductor composite gate dielectric having multiple incorporated atomic dopantsMOTOROLA INC·Filed 1995·Granted Jan 27, 1998·95 cites·19 claims
- 1891US4822753AMethod for making a w/tin contactMOTOROLA INC·Filed 1988·Granted Apr 18, 1989·100 cites·14 claims
- 1990US7015153B1Method for forming a layer using a purging gas in a semiconductor processFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Mar 21, 2006·56 cites·19 claims
- 2090US5885870AMethod for forming a semiconductor device having a nitrided oxide dielectric layerMOTOROLA INC·Filed 1997·Granted Mar 23, 1999·120 cites·16 claims
- 2189US6717226B2Transistor with layered high-K gate dielectric and method thereforMOTOROLA INC·Filed 2002·Granted Apr 6, 2004·52 cites·7 claims
- 2288US5571734AMethod for forming a fluorinated nitrogen containing dielectricMOTOROLA INC·Filed 1994·Granted Nov 5, 1996·71 cites·19 claims
- 2388US5510278AMethod for forming a thin film transistorMOTOROLA INC·Filed 1994·Granted Apr 23, 1996·67 cites·13 claims
- 2487US7655550B2Method of making metal gate transistorsFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Feb 2, 2010·14 cites·19 claims
- 2586US7029980B2Method of manufacturing SOI template layerFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Apr 18, 2006·25 cites·17 claims
- 2685US6297173B1Process for forming a semiconductor deviceMOTOROLA INC·Filed 1999·Granted Oct 2, 2001·52 cites·21 claims
- 2784US6423632B1Semiconductor device and a process for forming the sameMOTOROLA INC·Filed 2000·Granted Jul 23, 2002·34 cites·28 claims
- 2884US4605947ATitanium nitride MOS device gate electrode and method of producingMOTOROLA INC·Filed 1985·Granted Aug 12, 1986·70 cites·3 claims
- 2983US6136682AMethod for forming a conductive structure having a composite or amorphous barrier layerMOTOROLA INC·Filed 1997·Granted Oct 24, 2000·73 cites·19 claims
- 3082US5580815AProcess for forming field isolation and a structure over a semiconductor substrateMOTOROLA INC·Filed 1994·Granted Dec 3, 1996·74 cites·29 claims
- 3182US4914046APolycrystalline silicon device electrode and methodMOTOROLA INC·Filed 1989·Granted Apr 3, 1990·62 cites·7 claims
- 3281US6376349B1Process for forming a semiconductor device and a conductive structureMOTOROLA INC·Filed 2000·Granted Apr 23, 2002·29 cites·15 claims
- 3381US4897364AMethod for locos isolation using a framed oxidation mask and a polysilicon buffer layerMOTOROLA INC·Filed 1989·Granted Jan 30, 1990·57 cites·10 claims
- 3479US7297588B2Electronic device comprising a gate electrode including a metal-containing layer having one or more impurities and a process for forming the sameFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Nov 20, 2007·7 cites·20 claims
- 3576US5300187AMethod of removing contaminantsMOTOROLA INC·Filed 1992·Granted Apr 5, 1994·66 cites·22 claims
- 3675US7432164B2Semiconductor device comprising a transistor having a counter-doped channel region and method for forming the sameFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Oct 7, 2008·6 cites·17 claims
- 3773US6972224B2Method for fabricating dual-metal gate deviceFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Dec 6, 2005·16 cites·11 claims
- 3871US6255204B1Method for forming a semiconductor deviceMOTOROLA INC·Filed 1999·Granted Jul 3, 2001·31 cites·19 claims
- 3967US5371035AMethod for forming electrical isolation in an integrated circuit deviceMOTOROLA INC·Filed 1993·Granted Dec 6, 1994·39 cites·8 claims
- 4067US4927780AEncapsulation method for localized oxidation of siliconMOTOROLA INC·Filed 1989·Granted May 22, 1990·38 cites·16 claims
- 4166US5830802AProcess for reducing halogen concentration in a material layer during semiconductor device fabricationMOTOROLA INC·Filed 1995·Granted Nov 3, 1998·32 cites·17 claims
- 4264US7868389B2Electronic device comprising a gate electrode including a metal-containing layer having one or more impuritiesFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Jan 11, 2011·2 cites·20 claims
- 4364US6084279ASemiconductor device having a metal containing layer overlying a gate dielectricMOTOROLA INC·Filed 1997·Granted Jul 4, 2000·31 cites·21 claims
- 4463US5543635AThin film transistor and method of formationMOTOROLA INC·Filed 1995·Granted Aug 6, 1996·20 cites·29 claims
- 4563US4740483ASelective LPCVD tungsten deposition by nitridation of a dielectricMOTOROLA INC·Filed 1987·Granted Apr 26, 1988·28 cites·17 claims
- 4661US6818493B2Selective metal oxide removal performed in a reaction chamber in the absence of RF activationMOTOROLA INC·Filed 2001·Granted Nov 16, 2004·7 cites·27 claims
- 4759US5707889AProcess for forming field isolationMOTOROLA INC·Filed 1996·Granted Jan 13, 1998·21 cites·15 claims
- 4850US8178401B2Method for fabricating dual-metal gate deviceGILMER DAVID C·Filed 2006·Granted May 15, 2012·1 cites·10 claims
- 4946US4819040AEpitaxial CMOS by oxygen implantationMOTOROLA INC·Filed 1988·Granted Apr 4, 1989·9 cites·6 claims
- 5040US5352615ADenuding a semiconductor substrateMOTOROLA INC·Filed 1994·Granted Oct 4, 1994·11 cites·18 claims
Showing the top 50 of 57 patent records by PatentIndex Score.
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