Inventor · disambiguated record
Thomas Ivers
Also filed as: IVERS THOMAS · IVERS THOMAS H · IVERS THOMAS HENRY
11 granted patents·1 pending application·528 citations·filing 1999–2006
93Inventor score
Files withIBM11
Top patents by PatentIndex Score
12 records- 0198US6335261B1Directional CVD process with optimized etchbackIBM·Filed 2000·Granted Jan 1, 2002·214 cites·20 claims
- 0292US6252295B1Adhesion of silicon carbide filmsIBM·Filed 2000·Granted Jun 26, 2001·67 cites·14 claims
- 0390US6626188B2Method for cleaning and preconditioning a chemical vapor deposition chamber domeIBM·Filed 2001·Granted Sep 30, 2003·46 cites·24 claims
- 0488US7480990B2Method of making conductor contacts having enhanced reliabilityIBM·Filed 2006·Granted Jan 27, 2009·17 cites·20 claims
- 0588US6737747B2Advanced BEOL interconnect structures with low-k PE CVD cap layer and method thereofIBM·Filed 2002·Granted May 18, 2004·43 cites·13 claims
- 0687US6500772B2Methods and materials for depositing films on semiconductor substratesIBM·Filed 2001·Granted Dec 31, 2002·40 cites·8 claims
- 0786US6821890B2Method for improving adhesion to copperIBM·Filed 2001·Granted Nov 23, 2004·37 cites·16 claims
- 0883US6939797B2Advanced BEOL interconnect structures with low-k PE CVD cap layer and method thereofIBM·Filed 2003·Granted Sep 6, 2005·26 cites·20 claims
- 0969US6271595B1Method for improving adhesion to copperIBM·Filed 1999·Granted Aug 7, 2001·30 cites·15 claims
- 1058US6726996B2Laminated diffusion barrierIBM·Filed 2001·Granted Apr 27, 2004·8 cites·19 claims
- 1140US7034400B2Dual damascene interconnect structure using low stress fluorosilicate insulator with copper conductorsIBM·Filed 2003·Granted Apr 25, 2006·0 cites·12 claims
- 1229US2002076917A1Dual damascene interconnect structure using low stress flourosilicate insulator with copper conductorsFiled 1999·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →