Inventor · disambiguated record
Se-Aug Jang
Also filed as: JANG SE A · JANG SE-AUG
81 granted patents·4 pending applications·1,229 citations·filing 1993–2016
99Inventor score
Top patents by PatentIndex Score
85 records- 0197US7682911B2Semiconductor device having a fin transistor and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Mar 23, 2010·43 cites·9 claims
- 0296US7713823B2Semiconductor device with vertical channel transistor and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2008·Granted May 11, 2010·33 cites·13 claims
- 0396US6537901B2Method of manufacturing a transistor in a semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Mar 25, 2003·146 cites·69 claims
- 0495US6586288B2Method of forming dual-metal gates in semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Jul 1, 2003·119 cites·20 claims
- 0595US6506676B2Method of manufacturing semiconductor devices with titanium aluminum nitride work functionHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Jan 14, 2003·98 cites·21 claims
- 0690US9406678B2Method and gate structure for threshold voltage modulation in transistorsSK HYNIX INC·Filed 2014·Granted Aug 2, 2016·11 cites·15 claims
- 0790US9299704B2Semiconductor device and method for fabricating the sameSK HYNIX INC·Filed 2014·Granted Mar 29, 2016·9 cites·17 claims
- 0890US7045846B2Memory device and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2005·Granted May 16, 2006·17 cites·20 claims
- 0989US8237220B2Semiconductor device with vertical channel transistorSUNG MIN-GYU·Filed 2010·Granted Aug 7, 2012·8 cites·10 claims
- 1088US9281310B2Semiconductor device including gate structure for threshold voltage modulation in transistors and method for fabricating the sameSK HYNIX INC·Filed 2014·Granted Mar 8, 2016·8 cites·16 claims
- 1187US7112486B2Method for fabricating semiconductor device by using radical oxidationHYNIX SEMICONDUCTOR INC·Filed 2004·Granted Sep 26, 2006·47 cites·18 claims
- 1287US6579767B2Method for forming aluminum oxide as a gate dielectricHYUNDAI ELECTRONICS IND·Filed 2000·Granted Jun 17, 2003·47 cites·18 claims
- 1386US9548304B2Semiconductor device including gate structure for threshold voltage modulation in transistors and method for fabricating the sameSK HYNIX INC·Filed 2016·Granted Jan 17, 2017·4 cites·4 claims
- 1486US6514827B2Method for fabricating a dual metal gate for a semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Feb 4, 2003·38 cites·10 claims
- 1583US7842594B2Semiconductor device and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Nov 30, 2010·8 cites·19 claims
- 1682US7687361B2Method of fabricating a transistor having a triple channel in a memory deviceHYNIX SEMICONDUCTOR INC·Filed 2005·Granted Mar 30, 2010·8 cites·15 claims
- 1782US7029999B2Method for fabricating transistor with polymetal gate electrodeHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Apr 18, 2006·30 cites·17 claims
- 1880US6451639B1Method for forming a gate in a semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Sep 17, 2002·27 cites·13 claims
- 1980US6417055B2Method for forming gate electrode for a semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Jul 9, 2002·30 cites·11 claims
- 2079US8309448B2Method for forming buried word line in semiconductor deviceHWANG SUN-HWAN·Filed 2009·Granted Nov 13, 2012·10 cites·7 claims
- 2179US7915108B2Method for fabricating a semiconductor device with a FinFETHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Mar 29, 2011·8 cites·23 claims
- 2278US8410547B2Semiconductor device and method for fabricating the sameCHO HEUNG-JAE·Filed 2010·Granted Apr 2, 2013·4 cites·18 claims
- 2378US6524918B2Method for manufacturing a gate structure incorporating therein aluminum oxide as a gate dielectricHYUNDAI ELECTRONICS IND·Filed 2000·Granted Feb 25, 2003·21 cites·13 claims
- 2478US6436775B2MOSFET device fabrication method capable of allowing application of self-aligned contact process while maintaining metal gate to have uniform thicknessHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Aug 20, 2002·22 cites·16 claims
- 2577US5399520AMethod for the formation of field oxide film in semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 1994·Granted Mar 21, 1995·55 cites·8 claims
- 2675US8962463B2Semiconductor device with dual work function gate stacks and method for fabricating the sameSK HYNIX INC·Filed 2013·Granted Feb 24, 2015·3 cites·22 claims
- 2775US7804129B2Recessed gate electrode MOS transistor and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2005·Granted Sep 28, 2010·4 cites·7 claims
- 2875US7776694B2Method for fabricating a transistor having vertical channelHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Aug 17, 2010·5 cites·17 claims
- 2975US7217624B2Non-volatile memory device with conductive sidewall spacer and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2004·Granted May 15, 2007·16 cites·15 claims
- 3074US6933226B2Method of forming a metal gate in a semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Aug 23, 2005·18 cites·7 claims
- 3172US8048742B2Transistor including bulb-type recess channel and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Nov 1, 2011·4 cites·11 claims
- 3272US7332755B2Transistor structure of memory device and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2005·Granted Feb 19, 2008·5 cites·7 claims
- 3371US8053841B2Semiconductor device having a fin transistorHYNIX SEMICONDUCTOR INC·Filed 2010·Granted Nov 8, 2011·2 cites·8 claims
- 3470US6664195B2Method for forming damascene metal gateHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Dec 16, 2003·13 cites·10 claims
- 3569US7875540B2Method for manufacturing recess gate in a semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Jan 25, 2011·2 cites·12 claims
- 3669US7601583B2Transistor structure of memory device and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Oct 13, 2009·4 cites·12 claims
- 3769US6624065B2Method of fabricating a semiconductor device using a damascene metal gateHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Sep 23, 2003·16 cites·25 claims
- 3868US7838364B2Semiconductor device with bulb-type recessed channel and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Nov 23, 2010·3 cites·17 claims
- 3968US7579265B2Method for manufacturing recess gate in a semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Aug 25, 2009·2 cites·12 claims
- 4067US8963205B2Method for fabricating a semiconductor deviceKIM YONG-SOO·Filed 2008·Granted Feb 24, 2015·3 cites·20 claims
- 4167US8455343B2Semiconductor device with buried gate and method for fabricating the sameJANG SE-AUG·Filed 2010·Granted Jun 4, 2013·2 cites·22 claims
- 4267US5856230AMethod for making field oxide of semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 1997·Granted Jan 5, 1999·33 cites·6 claims
- 4366US9230963B2Semiconductor device with dual work function gate stacks and method for fabricating the sameSK HYNIX INC·Filed 2015·Granted Jan 5, 2016·1 cites·9 claims
- 4464US7074661B2Method for fabricating semiconductor device with use of partial gate recessing processHYNIX SEMICONDUCTOR INC·Filed 2004·Granted Jul 11, 2006·10 cites·8 claims
- 4560US5397733AMethod for the construction of field oxide film in semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 1994·Granted Mar 14, 1995·29 cites·12 claims
- 4659US8592899B2Transistor having vertical channelJANG SE-AUG·Filed 2010·Granted Nov 26, 2013·1 cites·14 claims
- 4757US5637529AMethod for forming element isolation insulating film of semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 1996·Granted Jun 10, 1997·24 cites·5 claims
- 4857US5326715AMethod for forming a field oxide film of a semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 1993·Granted Jul 5, 1994·31 cites·6 claims
- 4956US6979616B2Method for fabricating semiconductor device with dual gate dielectric structureHYNIX SEMICONDUCTOR INC·Filed 2004·Granted Dec 27, 2005·5 cites·11 claims
- 5055US6268272B1Method of forming gate electrode with titanium polycideHYUNDAI ELECTRONICS IND·Filed 1999·Granted Jul 31, 2001·14 cites·15 claims
Showing the top 50 of 85 patent records by PatentIndex Score.
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