Inventor · disambiguated record
Ying-Ho Chen
Also filed as: CHEN YING-HO
76 granted patents·8 pending applications·1,993 citations·filing 1972–2024
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG62TAIWAN SEMICONDUCTOR MFG CO LTD12ROBINS CO INC A H8TAIWAN SEMICONDUCTOR MANUFACTO1TAIWAN SEMICONDUCTOR MAUFACTUR1
Top patents by PatentIndex Score
84 records- 0195US6398627B1Slurry dispenser having multiple adjustable nozzlesTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Jun 4, 2002·57 cites·20 claims
- 0294US5741740AShallow trench isolation (STI) method employing gap filling silicon oxide dielectric layerTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Apr 21, 1998·161 cites·11 claims
- 0394US4306065A2-Aryl-4-substituted quinazolinesROBINS CO INC A H·Filed 1979·Granted Dec 15, 1981·28 cites·24 claims
- 0493US6391777B1Two-stage Cu anneal to improve Cu damascene processTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted May 21, 2002·86 cites·1 claims
- 0590US6753249B1Multilayer interface in copper CMP for low K dielectricTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Jun 22, 2004·64 cites·57 claims
- 0690US5721172ASelf-aligned polish stop layer hard masking method for forming planarized aperture fill layersTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Feb 24, 1998·108 cites·19 claims
- 0790US5702977AShallow trench isolation method employing self-aligned and planarized trench fill dielectric layerTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Dec 30, 1997·111 cites·20 claims
- 0889US11081402B2Replacement gate process for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 3, 2021·3 cites·20 claims
- 0989US9917017B2Replacement gate process for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 13, 2018·4 cites·20 claims
- 1089US6440840B1Damascene process to eliminate copper defects during chemical-mechanical polishing (CMP) for making electrical interconnections on integrated circuitsTAIWAN SEMICONDUCTOR MANUFACTO·Filed 2002·Granted Aug 27, 2002·46 cites·20 claims
- 1188US11756838B2Replacement gate process for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 12, 2023·1 cites·20 claims
- 1288US10515860B2Replacement gate process for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·3 cites·20 claims
- 1387US6736701B1Eliminate broken line damage of copper after CMPTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted May 18, 2004·29 cites·20 claims
- 1487US6429118B1Elimination of electrochemical deposition copper line damage for damascene processingTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Aug 6, 2002·40 cites·37 claims
- 1587US5786260AMethod of fabricating a readable alignment mark structure using enhanced chemical mechanical polishingTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Jul 28, 1998·80 cites·22 claims
- 1686US6391780B1Method to prevent copper CMP dishingTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted May 21, 2002·78 cites·20 claims
- 1786US6043133AMethod of photo alignment for shallow trench isolation chemical-mechanical polishingTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Mar 28, 2000·88 cites·14 claims
- 1886US5817567AShallow trench isolation methodTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Oct 6, 1998·86 cites·16 claims
- 1986US5731241ASelf-aligned sacrificial oxide for shallow trench isolationTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Mar 24, 1998·85 cites·22 claims
- 2084US6274483B1Method to improve metal line adhesion by trench corner shape modificationTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Aug 14, 2001·40 cites·13 claims
- 2183US9680017B2Semiconductor device including Fin FET and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jun 13, 2017·4 cites·20 claims
- 2283US5726090AGap-filling of O3 -TEOS for shallow trench isolationTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Mar 10, 1998·69 cites·23 claims
- 2383US4379167A1-Aryloxy-4-amino-2-butanols and the pharmaceutical use thereofROBINS CO INC A H·Filed 1977·Granted Apr 5, 1983·12 cites·15 claims
- 2482US2023386937A1Replacement gate process for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2581US5869384ATrench filling method employing silicon liner layer and gap filling silicon oxide trench fill layerTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Feb 9, 1999·63 cites·16 claims
- 2679US6049137AReadable alignment mark structure formed using enhanced chemical mechanical polishingTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Apr 11, 2000·47 cites·11 claims
- 2779US5817566ATrench filling method employing oxygen densified gap filling silicon oxide layer formed with low ozone concentrationTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Oct 6, 1998·49 cites·14 claims
- 2878US6518183B1Hillock inhibiting method for forming a passivated copper containing conductor layerTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Feb 11, 2003·26 cites·15 claims
- 2978US6100163AGap filling of shallow trench isolation by ozone-tetraethoxysilaneTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Aug 8, 2000·53 cites·8 claims
- 3077US4377582A2-Phenyl-4-[cis-2,5-dimethyl-4-(2-pyridinyl)-1-piperazinyl]quinazolineROBINS CO INC A H·Filed 1981·Granted Mar 22, 1983·10 cites·14 claims
- 3177US2024387699A1Methods of forming semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3276US12237402B2Methods of forming semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 25, 2025·0 cites·20 claims
- 3376US6043136ATrench filling method employing oxygen densified gap filling CVD silicon oxide layerTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Mar 28, 2000·42 cites·3 claims
- 3475US6946397B2Chemical mechanical polishing process with reduced defects in a copper processTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Sep 20, 2005·18 cites·24 claims
- 3575US6080656AMethod for forming a self-aligned copper structure with improved planarityTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jun 27, 2000·46 cites·14 claims
- 3674US11515403B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 29, 2022·1 cites·20 claims
- 3774US6227947B1Apparatus and method for chemical mechanical polishing metal on a semiconductor waferTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted May 8, 2001·35 cites·20 claims
- 3874US4806555A1-aryloxy-4-amino-2-butanolsROBINS CO INC A H·Filed 1987·Granted Feb 21, 1989·10 cites·6 claims
- 3973US7416648B2Image sensor system for monitoring condition of electrode for electrochemical process toolsTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Aug 26, 2008·4 cites·20 claims
- 4072US6634930B1Method and apparatus for preventing metal corrosion during chemical mechanical polishingTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Oct 21, 2003·14 cites·7 claims
- 4171US6376377B1Post chemical mechanical polish (CMP) planarizing substrate cleaning method employing enhanced substrate hydrophilicityTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Apr 23, 2002·14 cites·19 claims
- 4271US4463190A1-Aryloxy-4-amino-2-butanolsROBINS CO INC A H·Filed 1982·Granted Jul 31, 1984·7 cites·1 claims
- 4368US6869858B2Shallow trench isolation planarized by wet etchback and chemical mechanical polishingTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Mar 22, 2005·11 cites·14 claims
- 4467US10068992B2Semiconductor device including fin FET and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 4, 2018·1 cites·21 claims
- 4567US6620725B1Reduction of Cu line damage by two-step CMPTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Sep 16, 2003·32 cites·10 claims
- 4667US6239002B1Thermal oxidizing method for forming with attenuated surface sensitivity ozone-teos silicon oxide dielectric layer upon a thermally oxidized silicon substrate layerTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted May 29, 2001·34 cites·27 claims
- 4760US6635211B2Reinforced polishing pad for linear chemical mechanical polishing and method for formingTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Oct 21, 2003·3 cites·10 claims
- 4860US6365523B1Integrated high density plasma chemical vapor deposition (HDP-CVD) method and chemical mechanical polish (CMP) planarizing method for forming patterned planarized aperture fill layersTAIWAN SEMICONDUCTOR MAUFACTUR·Filed 1998·Granted Apr 2, 2002·25 cites·24 claims
- 4959US6806184B2Method to eliminate copper hillocks and to reduce copper stressTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Oct 19, 2004·8 cites·27 claims
- 5059US6422929B1Polishing pad for a linear polisher and method for formingTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jul 23, 2002·7 cites·16 claims
Showing the top 50 of 84 patent records by PatentIndex Score.
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