Inventor · disambiguated record
Soichi Sugiura
Also filed as: SUGIURA SOICHI
10 granted patents·7 pending applications·60 citations·filing 1990–2024
85Inventor score
Top patents by PatentIndex Score
17 records- 0183US10833087B2Semiconductor devices including transistors comprising a charge trapping material, and related systems and methodsMICRON TECHNOLOGY INC·Filed 2018·Granted Nov 10, 2020·5 cites·27 claims
- 0271US2025126773A1Memory device including calibration operation and transistor having adjustable threshold voltageMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 0366US2025151262A1Microelectronic devices, and related methods, memory devices, and electronic systemsMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 0461US12178033B2Memory device including calibration operation and transistor having adjustable threshold voltageMICRON TECHNOLOGY INC·Filed 2021·Granted Dec 24, 2024·0 cites·18 claims
- 0557US12020745B2Memory array architecture having sensing circuitry to drive two matrices for higher array efficiencyMICRON TECHNOLOGY INC·Filed 2022·Granted Jun 25, 2024·0 cites·24 claims
- 0657US6140675ASemiconductor device and manufacturing method thereofTOSHIBA KK·Filed 1999·Granted Oct 31, 2000·17 cites·16 claims
- 0757US2024274526A1Memory Circuitry And Methods Used In Forming Memory CircuitryMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 0854US2024072174A1Transistors with mitigated free body effectMICRON TECHNOLOGY INC·Filed 2023·Application pending·0 cites
- 0953US5266823ASemiconductor device having film for controlling diffusion of impurityTOSHIBA KK·Filed 1991·Granted Nov 30, 1993·25 cites·20 claims
- 1050US9768123B2Semiconductor device structures including a distributed bragg reflectorMICRON TECHNOLOGY INC·Filed 2015·Granted Sep 19, 2017·0 cites·16 claims
- 1147US9159677B2Methods of forming semiconductor device structuresZHANG XINYU·Filed 2012·Granted Oct 13, 2015·0 cites·19 claims
- 1247US2023397406A1Memory device having control gate dielectric structure with different dielectric materialsMICRON TECHNOLOGY INC·Filed 2022·Application pending·0 cites
- 1346US6150686ASemiconductor integrated circuit device with trench capacitor and method of manufacturing the sameTOSHIBA KK·Filed 1998·Granted Nov 21, 2000·9 cites·16 claims
- 1445US11929411B2Recessed access devices and methods of forming a recessed access devicesMICRON TECHNOLOGY INC·Filed 2021·Granted Mar 12, 2024·0 cites·14 claims
- 1541US2023062092A1Recessed Access Devices And Methods Of Forming A Recessed Access DevicesMICRON TECHNOLOGY INC·Filed 2021·Application pending·0 cites
- 1640US2021358919A1Methods of forming electronic apparatus with titanium nitride conductive structures, and related electronic apparatus and systemsMICRON TECHNOLOGY INC·Filed 2020·Application pending·0 cites
- 1732US5038183ADiode used in reference potential generating circuit for dramTOSHIBA KK·Filed 1990·Granted Aug 6, 1991·4 cites·16 claims
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