Inventor · disambiguated record
Wolodymyr Czubatyj
Also filed as: CZUBATYJ WOLODYMYR
55 granted patents·12 pending applications·7,694 citations·filing 1982–2012
99Inventor score
Files withOVONYX INC28ENERGY CONVERSION DEVICES INC19CZUBATYJ WOLODYMYR8ELPIDA MEMORY INC2INTEL CORP2
Top patents by PatentIndex Score
67 records- 0199US5933365AMemory element with energy control mechanismENERGY CONVERSION DEVICES INC·Filed 1997·Granted Aug 3, 1999·585 cites·65 claims
- 0299US5825046AComposite memory material comprising a mixture of phase-change memory material and dielectric materialENERGY CONVERSION DEVICES INC·Filed 1996·Granted Oct 20, 1998·580 cites·14 claims
- 0399US5414271AElectrically erasable memory elements having improved set resistance stabilityENERGY CONVERSION DEVICES INC·Filed 1991·Granted May 9, 1995·448 cites·32 claims
- 0499US5341328AElectrically erasable memory elements having reduced switching current requirements and increased write/erase cycle lifeENERGY CONVERSION DEVICES INC·Filed 1992·Granted Aug 23, 1994·403 cites·30 claims
- 0599US5166758AElectrically erasable phase change memoryENERGY CONVERSION DEVICES INC·Filed 1991·Granted Nov 24, 1992·861 cites·28 claims
- 0698US6969866B1Electrically programmable memory element with improved contactsOVONYX INC·Filed 1999·Granted Nov 29, 2005·196 cites·33 claims
- 0798US5596522AHomogeneous compositions of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elementsENERGY CONVERSION DEVICES INC·Filed 1995·Granted Jan 21, 1997·483 cites·20 claims
- 0898US5534711AElectrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefromENERGY CONVERSION DEVICES INC·Filed 1995·Granted Jul 9, 1996·364 cites·21 claims
- 0998US5406509AElectrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefromENERGY CONVERSION DEVICES INC·Filed 1993·Granted Apr 11, 1995·423 cites·20 claims
- 1098US5335219AHomogeneous composition of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elementsOVSHINSKY STANFORD R·Filed 1991·Granted Aug 2, 1994·450 cites·29 claims
- 1198US5296716AElectrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefromENERGY CONVERSION DEVICES INC·Filed 1991·Granted Mar 22, 1994·826 cites·70 claims
- 1298US4419533APhotovoltaic device having incident radiation directing means for total internal reflectionENERGY CONVERSION DEVICES INC·Filed 1982·Granted Dec 6, 1983·172 cites·19 claims
- 1397US6087674AMemory element with memory material comprising phase-change material and dielectric materialENERGY CONVERSION DEVICES INC·Filed 1998·Granted Jul 11, 2000·843 cites·15 claims
- 1496US7280390B2Reading phase change memories without triggering reset cell threshold devicesOVONYX INC·Filed 2005·Granted Oct 9, 2007·43 cites·30 claims
- 1596US6075719AMethod of programming phase-change memory elementENERGY CONVERSION DEVICES INC·Filed 1999·Granted Jun 13, 2000·179 cites·18 claims
- 1696US4782340AElectronic arrays having thin film line driversENERGY CONVERSION DEVICES INC·Filed 1986·Granted Nov 1, 1988·138 cites·41 claims
- 1793US6872963B2Programmable resistance memory element with layered memory materialOVONYX INC·Filed 2002·Granted Mar 29, 2005·61 cites·25 claims
- 1893US4882295AMethod of making a double injection field effect transistorENERGY CONVERSION DEVICES INC·Filed 1989·Granted Nov 21, 1989·83 cites·2 claims
- 1989US7978508B2Reduction of drift in phase-change memory via thermally-managed programmingOVONYX INC·Filed 2009·Granted Jul 12, 2011·21 cites·57 claims
- 2089US6567296B1Memory deviceST MICROELECTRONICS SRL·Filed 2001·Granted May 20, 2003·54 cites·20 claims
- 2188US6914801B2Method of eliminating drift in phase-change memoryOVONYX INC·Filed 2003·Granted Jul 5, 2005·44 cites·23 claims
- 2287US8344348B2Memory deviceOVONYX INC·Filed 2008·Granted Jan 1, 2013·15 cites·30 claims
- 2386US7649191B2Forming a carbon layer between phase change layers of a phase change memoryINTEL CORP·Filed 2007·Granted Jan 19, 2010·11 cites·21 claims
- 2485US7994034B2Temperature and pressure control methods to fill features with programmable resistance and switching devicesOVONYX INC·Filed 2008·Granted Aug 9, 2011·14 cites·19 claims
- 2585US5008617AFunctional testing of ultra large area, ultra large scale integrated circuitsENERGY CONVERSION DEVICES INC·Filed 1989·Granted Apr 16, 1991·48 cites·5 claims
- 2684US5180690AMethod of forming a layer of doped crystalline semiconductor alloy materialENERGY CONVERSION DEVICES INC·Filed 1990·Granted Jan 19, 1993·98 cites·32 claims
- 2782US7282730B2Forming a carbon layer between phase change layers of a phase change memoryINTEL CORP·Filed 2005·Granted Oct 16, 2007·6 cites·8 claims
- 2879US7327602B2Methods of accelerated life testing of programmable resistance memory elementsOVONYX INC·Filed 2004·Granted Feb 5, 2008·25 cites·21 claims
- 2979US6992369B2Programmable resistance memory element with threshold switching materialOVONYX INC·Filed 2003·Granted Jan 31, 2006·17 cites·7 claims
- 3079US5694146AActive matrix LCD array employing thin film chalcogenide threshold switches to isolate individual pixelsENERGY CONVERSION DEVICES INC·Filed 1994·Granted Dec 2, 1997·40 cites·20 claims
- 3178US5103284ASemiconductor with ordered clustersENERGY CONVERSION DEVICES INC·Filed 1991·Granted Apr 7, 1992·42 cites·18 claims
- 3277US8796101B2Memory deviceCZUBATYJ WOLODYMYR·Filed 2012·Granted Aug 5, 2014·4 cites·11 claims
- 3377US8178385B2Phase change memory that switches between crystalline phasesCZUBATYJ WOLODYMYR·Filed 2011·Granted May 15, 2012·3 cites·10 claims
- 3476US8269208B2Memory deviceCZUBATYJ WOLODYMYR·Filed 2008·Granted Sep 18, 2012·8 cites·19 claims
- 3575US7589364B2Electrically rewritable non-volatile memory element and method of manufacturing the sameELPIDA MEMORY INC·Filed 2005·Granted Sep 15, 2009·7 cites·3 claims
- 3674US7525117B2Chalcogenide devices and materials having reduced germanium or telluruim contentOVONYX INC·Filed 2005·Granted Apr 28, 2009·6 cites·15 claims
- 3774US5757446ALiquid crystal display matrix array employing ovonic threshold switching devices to isolate individual pixelsENERGY CONVERSION DEVICES INC·Filed 1995·Granted May 26, 1998·47 cites·26 claims
- 3873US7935951B2Composite chalcogenide materials and devicesOVONYX INC·Filed 2007·Granted May 3, 2011·5 cites·23 claims
- 3969US8685291B2Variable resistance materials with superior data retention characteristicsSCHELL CARL·Filed 2010·Granted Apr 1, 2014·3 cites·41 claims
- 4067US8344350B2Phase change device with offset contactOVONYX INC·Filed 2011·Granted Jan 1, 2013·1 cites·14 claims
- 4167US7723715B2Memory device and method of making sameOVONYX INC·Filed 2006·Granted May 25, 2010·3 cites·25 claims
- 4266US7923724B2Phase change memory that switches between crystalline phasesOVONYX INC·Filed 2005·Granted Apr 12, 2011·2 cites·13 claims
- 4366US7473574B2Memory element with improved contactsOVONYX INC·Filed 2006·Granted Jan 6, 2009·2 cites·3 claims
- 4465US7459762B2Programmable resistance memory element with threshold switching materialOVONYX INC·Filed 2006·Granted Dec 2, 2008·2 cites·9 claims
- 4564US8350661B2Breakdown layer via lateral diffusionOVONYX INC·Filed 2009·Granted Jan 8, 2013·2 cites·54 claims
- 4664US7952087B2Phase change device with offset contactOVONYX INC·Filed 2008·Granted May 31, 2011·2 cites·33 claims
- 4764US7902536B2Memory device and method of making sameOVONYX INC·Filed 2006·Granted Mar 8, 2011·4 cites·5 claims
- 4863US7692272B2Electrically rewritable non-volatile memory element and method of manufacturing the sameELPIDA MEMORY INC·Filed 2006·Granted Apr 6, 2010·5 cites·17 claims
- 4963US7407829B2Electrically programmable memory element with improved contactsOVONYX INC·Filed 2004·Granted Aug 5, 2008·9 cites·64 claims
- 5062US7786462B2Chalcogenide devices exhibiting stable operation from the as-fabricated stateOVONYX INC·Filed 2007·Granted Aug 31, 2010·1 cites·9 claims
Showing the top 50 of 67 patent records by PatentIndex Score.
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