Inventor · disambiguated record
Qingchun Zhang
Also filed as: ZHANG QINGCHUN
85 granted patents·14 pending applications·592 citations·filing 1999–2022
99Inventor score
Files withCREE INC39ZHANG QINGCHUN28AMGEN INC5SHANGHAI MICROPORT EP MEDTECH CO LTD5HENNING JASON PATRICK4
Top patents by PatentIndex Score
99 records- 0197US8415671B2Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devicesZHANG QINGCHUN·Filed 2010·Granted Apr 9, 2013·36 cites·49 claims
- 0297US8232558B2Junction barrier Schottky diodes with current surge capabilityZHANG QINGCHUN·Filed 2008·Granted Jul 31, 2012·41 cites·20 claims
- 0397US7728402B2Semiconductor devices including schottky diodes with controlled breakdownCREE INC·Filed 2006·Granted Jun 1, 2010·51 cites·28 claims
- 0496US9929284B1Power schottky diodes having local current spreading layers and methods of forming such devicesCREE INC·Filed 2016·Granted Mar 27, 2018·15 cites·19 claims
- 0596US7989882B2Transistor with A-face conductive channel and trench protecting well regionCREE INC·Filed 2007·Granted Aug 2, 2011·43 cites·26 claims
- 0695US8680587B2Schottky diodeHENNING JASON PATRICK·Filed 2011·Granted Mar 25, 2014·22 cites·38 claims
- 0795US7687825B2Insulated gate bipolar conduction transistors (IBCTS) and related methods of fabricationCREE INC·Filed 2007·Granted Mar 30, 2010·34 cites·28 claims
- 0894US8653534B2Junction Barrier Schottky diodes with current surge capabilityZHANG QINGCHUN·Filed 2012·Granted Feb 18, 2014·14 cites·24 claims
- 0993US11075264B2Super junction power semiconductor devices formed via ion implantation channeling techniques and related methodsCREE INC·Filed 2016·Granted Jul 27, 2021·8 cites·21 claims
- 1093US8211770B2Transistor with A-face conductive channel and trench protecting well regionZHANG QINGCHUN·Filed 2011·Granted Jul 3, 2012·14 cites·30 claims
- 1192US9991399B2Passivation structure for semiconductor devicesCREE INC·Filed 2014·Granted Jun 5, 2018·11 cites·35 claims
- 1292US7838377B2Power semiconductor devices with mesa structures and buffer layers including mesa stepsCREE INC·Filed 2008·Granted Nov 23, 2010·21 cites·15 claims
- 1392US7795691B2Semiconductor transistor with P type re-grown channel layerCREE INC·Filed 2008·Granted Sep 14, 2010·23 cites·42 claims
- 1491US9673283B2Power module for supporting high current densitiesHENNING JASON PATRICK·Filed 2012·Granted Jun 6, 2017·9 cites·39 claims
- 1591US9117739B2Semiconductor devices with heterojunction barrier regions and methods of fabricating sameZHANG QINGCHUN·Filed 2010·Granted Aug 25, 2015·12 cites·24 claims
- 1690US8288220B2Methods of forming semiconductor devices including epitaxial layers and related structuresHULL BRETT ADAM·Filed 2009·Granted Oct 16, 2012·19 cites·38 claims
- 1788US9548374B2High power insulated gate bipolar transistorsCREE INC·Filed 2014·Granted Jan 17, 2017·7 cites·24 claims
- 1888US8664665B2Schottky diode employing recesses for elements of junction barrier arrayHENNING JASON PATRICK·Filed 2011·Granted Mar 4, 2014·10 cites·29 claims
- 1986US9530844B2Transistor structures having reduced electrical field at the gate oxide and methods for making sameCREE INC·Filed 2012·Granted Dec 27, 2016·7 cites·23 claims
- 2086US8803277B2Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating sameHENNING JASON·Filed 2011·Granted Aug 12, 2014·10 cites·17 claims
- 2186US7719080B2Semiconductor device with a conduction enhancement layerTELEDYNE SCIENT & IMAGING LLC·Filed 2005·Granted May 18, 2010·14 cites·10 claims
- 2285US8330244B2Semiconductor devices including Schottky diodes having doped regions arranged as islands and methods of fabricating sameZHANG QINGCHUN·Filed 2009·Granted Dec 11, 2012·8 cites·20 claims
- 2384US8710510B2High power insulated gate bipolar transistorsZHANG QINGCHUN·Filed 2007·Granted Apr 29, 2014·8 cites·15 claims
- 2484US8541787B2High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capabilityZHANG QINGCHUN·Filed 2009·Granted Sep 24, 2013·10 cites·25 claims
- 2584US8432012B2Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating sameZHANG QINGCHUN·Filed 2011·Granted Apr 30, 2013·6 cites·12 claims
- 2683US9831355B2Schottky structure employing central implants between junction barrier elementsCREE INC·Filed 2016·Granted Nov 28, 2017·3 cites·18 claims
- 2783US9318624B2Schottky structure employing central implants between junction barrier elementsCREE INC·Filed 2012·Granted Apr 19, 2016·5 cites·27 claims
- 2883US9064710B2Transistor with A-face conductive channel and trench protecting well regionZHANG QINGCHUN·Filed 2012·Granted Jun 23, 2015·5 cites·19 claims
- 2983US8637386B2Diffused junction termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating sameZHANG QINGCHUN·Filed 2010·Granted Jan 28, 2014·5 cites·19 claims
- 3082US8952481B2Super surge diodesCREE INC·Filed 2012·Granted Feb 10, 2015·8 cites·29 claims
- 3182US8629509B2High voltage insulated gate bipolar transistors with minority carrier diverterRYU SEI-HYUNG·Filed 2009·Granted Jan 14, 2014·9 cites·25 claims
- 3281US8193848B2Power switching devices having controllable surge current capabilitiesZHANG QINGCHUN·Filed 2009·Granted Jun 5, 2012·10 cites·30 claims
- 3381US7476932B2U-shape metal-oxide-semiconductor (UMOS) gate structure for high power MOS-based semiconductor devicesBOEING CO·Filed 2006·Granted Jan 13, 2009·9 cites·24 claims
- 3478US9865750B2Schottky diodeCREE INC·Filed 2015·Granted Jan 9, 2018·2 cites·24 claims
- 3578US9570560B2Diffused junction termination structures for silicon carbide devicesCREE INC·Filed 2013·Granted Feb 14, 2017·3 cites·15 claims
- 3678US8460977B2Mesa termination structures for power semiconductor devices and methods of forming power semiconductor devices with mesa termination structuresZHANG QINGCHUN·Filed 2011·Granted Jun 11, 2013·4 cites·9 claims
- 3778US7247550B2Silicon carbide-based device contact and contact fabrication methodTELEDYNE LICENSING LLC·Filed 2005·Granted Jul 24, 2007·7 cites·18 claims
- 3876US9595618B2Semiconductor devices with heterojunction barrier regions and methods of fabricating sameCREE INC·Filed 2014·Granted Mar 14, 2017·2 cites·8 claims
- 3976US8866150B2Silicon carbide power devices including P-type epitaxial layers and direct ohmic contactsDAS MRINAL KANTI·Filed 2007·Granted Oct 21, 2014·6 cites·14 claims
- 4076US7883949B2Methods of forming silicon carbide switching devices including P-type channelsCREE INC·Filed 2007·Granted Feb 8, 2011·4 cites·20 claims
- 4175US9171977B2Optically assist-triggered wide bandgap thyristors having positive temperature coefficientsZHANG QINGCHUN·Filed 2012·Granted Oct 27, 2015·3 cites·19 claims
- 4275US8610130B2Monolithic high voltage switching devicesRYU SEI-HYUNG·Filed 2009·Granted Dec 17, 2013·5 cites·16 claims
- 4374US8536582B2Stable power devices on low-angle off-cut silicon carbide crystalsZHANG QINGCHUN·Filed 2009·Granted Sep 17, 2013·4 cites·11 claims
- 4473US10424660B2Power silicon carbide based MOSFET transistors with improved short circuit capabilities and methods of making such devicesCREE INC·Filed 2017·Granted Sep 24, 2019·1 cites·19 claims
- 4573US9231122B2Schottky diodeCREE INC·Filed 2014·Granted Jan 5, 2016·2 cites·21 claims
- 4673US8097919B2Mesa termination structures for power semiconductor devices including mesa step buffersZHANG QINGCHUN·Filed 2008·Granted Jan 17, 2012·4 cites·17 claims
- 4771US9385182B2Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating sameCREE INC·Filed 2014·Granted Jul 5, 2016·2 cites·18 claims
- 4871US9312343B2Transistors with semiconductor interconnection layers and semiconductor channel layers of different semiconductor materialsZHANG QINGCHUN·Filed 2009·Granted Apr 12, 2016·4 cites·41 claims
- 4971US8618582B2Edge termination structure employing recesses for edge termination elementsHENNING JASON PATRICK·Filed 2011·Granted Dec 31, 2013·3 cites·35 claims
- 5069US9640609B2Double guard ring edge termination for silicon carbide devicesZHANG QINGCHUN·Filed 2008·Granted May 2, 2017·4 cites·28 claims
Showing the top 50 of 99 patent records by PatentIndex Score.
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