Inventor · disambiguated record
Wen-Jia Hsieh
Also filed as: HSIEH WEN-JIA
18 granted patents·1 pending application·34 citations·filing 2013–2024
92Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD19
Top patents by PatentIndex Score
19 records- 0197US11296201B2Gate structure and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 5, 2022·5 cites·20 claims
- 0289US11038035B2Semiconductor structure with enlarged gate electrode structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 15, 2021·4 cites·19 claims
- 0389US9887129B2Semiconductor structure with contact plugTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 6, 2018·7 cites·18 claims
- 0486US10262894B2FinFET device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 16, 2019·4 cites·20 claims
- 0583US9748350B2Semiconductor structure with enlarged gate electrode structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 29, 2017·3 cites·16 claims
- 0683US2024379790A1Semiconductor structure with enlarged gate electrode structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0779US12015068B2Gate structure and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 18, 2024·0 cites·20 claims
- 0879US10686049B2Gate structure and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 16, 2020·1 cites·20 claims
- 0979US9941152B2Mechanism for forming metal gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 10, 2018·2 cites·20 claims
- 1077US10170554B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 1, 2019·4 cites·17 claims
- 1176US10475699B2Semiconductor device with contact plugTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 12, 2019·1 cites·20 claims
- 1275US11694924B2Semiconductor device having contact plugTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 4, 2023·0 cites·20 claims
- 1375US9887130B2FinFET device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 6, 2018·2 cites·19 claims
- 1474US10008574B2Gate structure and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 26, 2018·1 cites·20 claims
- 1572US12191366B2Semiconductor structure with enlarged gate electrode structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 7, 2025·0 cites·19 claims
- 1666US11056384B2Method for forming contact plugTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 6, 2021·0 cites·20 claims
- 1762US10312338B2Gate structure and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 4, 2019·0 cites·20 claims
- 1858US10141416B2Semiconductor structure with enlarged gate electrode structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 27, 2018·0 cites·20 claims
- 1954US9564332B2Mechanism for forming metal gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Feb 7, 2017·0 cites·20 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →