Inventor · disambiguated record
Yi Heng Tsai
Also filed as: TSAI YI HENG
35 granted patents·5 pending applications·161 citations·filing 2010–2025
96Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD27TAIWAN SEMICONDUCTOR MFG7TSAI YI HENG2CHANG KUEI-SUNG1CHU CHIA-HUA1
Top patents by PatentIndex Score
40 records- 0198US11508902B2Hybrid ultrasonic transducer and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 22, 2022·3 cites·20 claims
- 0297US9085456B2Support structure for TSV in MEMS structureTSAI YI HENG·Filed 2012·Granted Jul 21, 2015·53 cites·20 claims
- 0397US9065358B2MEMS structure and method of forming sameTSAI YI HENG·Filed 2011·Granted Jun 23, 2015·51 cites·14 claims
- 0496US10944041B1Hybrid ultrasonic transducer and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 9, 2021·12 cites·20 claims
- 0592US11767219B2Semiconductor structure including scribe line structures and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 26, 2023·2 cites·20 claims
- 0687US8878312B2Electrical bypass structure for MEMS deviceHUNG CHIA-MING·Filed 2011·Granted Nov 4, 2014·16 cites·15 claims
- 0785US12297105B2Semiconductor structure including scribe line structures and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
- 0884US8232614B1Package systems having a conductive element through a substrate thereof and manufacturing methods of the sameCHU CHIA-HUA·Filed 2011·Granted Jul 31, 2012·6 cites·20 claims
- 0984US2023353066A1MEMS Structure and Method of Forming SameTAIWAN SEMICONDUCTOR MFG COMPANY CO LTD·Filed 2023·Application pending·0 cites
- 1083US2025276894A1Semiconductor structure and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1180US2024373753A1Integrated heater (and related method) to recover degraded piezoelectric device performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1279US8368152B2MEMS device etch stopTAIWAN SEMICONDUCTOR MFG·Filed 2011·Granted Feb 5, 2013·4 cites·20 claims
- 1379US2025296117A1Hybrid ultrasonic transducer systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1478US12082505B2Integrated heater (and related method) to recover degraded piezoelectric device performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 3, 2024·0 cites·20 claims
- 1578US2024290541A1Integration scheme for breakdown voltage enhancement of a piezoelectric metal-insulator-metal deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1677US9859819B2MEMS structure and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 2, 2018·1 cites·20 claims
- 1777US9502370B2Semiconductor bonding structure and processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 22, 2016·2 cites·20 claims
- 1877US9281287B2Semiconductor bonding structure and processTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Mar 8, 2016·3 cites·20 claims
- 1976US8633554B2MEMS device etch stopTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 21, 2014·3 cites·13 claims
- 2074US12377441B2Hybrid ultrasonic transducer systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 5, 2025·0 cites·20 claims
- 2174US11736037B2MEMS structure and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 22, 2023·0 cites·20 claims
- 2273US11984261B2Integration scheme for breakdown voltage enhancement of a piezoelectric metal-insulator-metal deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 14, 2024·0 cites·20 claims
- 2372US10087071B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 2, 2018·1 cites·19 claims
- 2471US8878355B2Semiconductor bonding structure and processTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Nov 4, 2014·2 cites·20 claims
- 2568US8343789B2Microstructure device with an improved anchorTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Jan 1, 2013·2 cites·14 claims
- 2666US11730058B2Integrated heater (and related method) to recover degraded piezoelectric device performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 15, 2023·0 cites·20 claims
- 2766US10541627B2MEMS structure and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 21, 2020·0 cites·20 claims
- 2862US11107630B2Integration scheme for breakdown voltage enhancement of a piezoelectric metal-insulator-metal deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 31, 2021·0 cites·20 claims
- 2959US9975754B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 22, 2018·0 cites·20 claims
- 3058US10737936B2Semiconductor structure and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 11, 2020·0 cites·18 claims
- 3158US9266724B2Method for handling a thin substrate and for substrate cappingTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Feb 23, 2016·0 cites·20 claims
- 3256US9656855B1Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 23, 2017·0 cites·20 claims
- 3355US9422153B2Support structure for TSV in MEMS structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 23, 2016·0 cites·20 claims
- 3449US8704317B2Microstructure device with an improved anchorTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Apr 22, 2014·0 cites·20 claims
- 3548US9418849B2Cavity structure using patterned sacrificial layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 16, 2016·0 cites·20 claims
- 3647US11289568B2Reduction of electric field enhanced moisture penetration by metal shieldingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 29, 2022·0 cites·20 claims
- 3747US9493346B2Capacitor with planarized bonding for CMOS-MEMS integrationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 15, 2016·0 cites·21 claims
- 3847US9449867B2VHF etch barrier for semiconductor integrated microsystemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 20, 2016·0 cites·20 claims
- 3946US9446945B2Isolation structure for MEMS 3D IC integrationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 20, 2016·0 cites·20 claims
- 4046US8796110B2Method for handling a thin substrate and for substrate cappingCHANG KUEI-SUNG·Filed 2011·Granted Aug 5, 2014·0 cites·20 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →