Inventor · disambiguated record
Larissa Wehrhahn-Kilian
Also filed as: WEHRHAHN-KILIAN LARISSA
9 granted patents·1 pending application·13 citations·filing 2007–2024
79Inventor score
Top patents by PatentIndex Score
10 records- 0177US7763506B2Method for making an integrated circuit including vertical junction field effect transistorsINFINEON TECHNOLOGIES AUSTRIA·Filed 2007·Granted Jul 27, 2010·7 cites·14 claims
- 0272US11145755B2Silicon carbide semiconductor component with edge termination structureINFINEON TECHNOLOGIES AG·Filed 2018·Granted Oct 12, 2021·1 cites·20 claims
- 0371US10861964B2Semiconductor device with junction termination zoneINFINEON TECHNOLOGIES AG·Filed 2018·Granted Dec 8, 2020·1 cites·16 claims
- 0464US8102012B2Transistor component having a shielding structurePETERS DETHARD·Filed 2009·Granted Jan 24, 2012·4 cites·36 claims
- 0561US2025022918A1Semiconductor die with a silicon carbide substrateINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 0653US11322596B2Semiconductor device including junction material in a trench and manufacturing methodINFINEON TECHNOLOGIES AG·Filed 2019·Granted May 3, 2022·0 cites·21 claims
- 0751US11380756B2Silicon carbide device with Schottky contactINFINEON TECHNOLOGIES AG·Filed 2020·Granted Jul 5, 2022·0 cites·20 claims
- 0850US10541325B2Semiconductor device with termination structure including field zones and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2018·Granted Jan 21, 2020·0 cites·28 claims
- 0948US11177380B2Silicon carbide semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2019·Granted Nov 16, 2021·0 cites·21 claims
- 1043US11063144B2Silicon carbide semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jul 13, 2021·0 cites·12 claims
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