Inventor · disambiguated record
Daniel C. Worledge
Also filed as: WORLEDGE DANIEL · WORLEDGE DANIEL C · WORLEDGE DANIEL CHRISTOPHER
145 granted patents·20 pending applications·622 citations·filing 2001–2024
99Inventor score
Top patents by PatentIndex Score
165 records- 0198US8324697B2Seed layer and free magnetic layer for perpendicular anisotropy in a spin-torque magnetic random access memoryWORLEDGE DANIEL C·Filed 2010·Granted Dec 4, 2012·57 cites·3 claims
- 0297US9614144B1Otp mramIBM·Filed 2015·Granted Apr 4, 2017·18 cites·24 claims
- 0396US9391266B1Perpendicular magnetic anisotropy BCC multilayersIBM·Filed 2015·Granted Jul 12, 2016·6 cites·3 claims
- 0496US8889433B2Spin hall effect assisted spin transfer torque magnetic random access memoryIBM·Filed 2013·Granted Nov 18, 2014·16 cites·8 claims
- 0596US6943571B2Reduction of positional errors in a four point probe resistance measurementIBM·Filed 2003·Granted Sep 13, 2005·85 cites·6 claims
- 0695US11501810B2Amorphous spin diffusion layer for modified double magnetic tunnel junction structureIBM·Filed 2021·Granted Nov 15, 2022·2 cites·24 claims
- 0795US9484531B2Perpendicular magnetic anisotropy BCC multilayersIBM·Filed 2015·Granted Nov 1, 2016·5 cites·2 claims
- 0895US8896041B2Spin hall effect assisted spin transfer torque magnetic random access memoryIBM·Filed 2013·Granted Nov 25, 2014·13 cites·9 claims
- 0995US7274057B2Techniques for spin-flop switching with offset fieldIBM·Filed 2004·Granted Sep 25, 2007·56 cites·17 claims
- 1094US8482968B2Non-volatile magnetic tunnel junction transistorWORLEDGE DANIEL C·Filed 2010·Granted Jul 9, 2013·21 cites·20 claims
- 1194US8233249B2Magnetic tunnel junction transistor deviceWORLEDGE DANIEL C·Filed 2010·Granted Jul 31, 2012·15 cites·23 claims
- 1293US9496018B2Nonvolatile memory interface for metadata shadowingIBM·Filed 2015·Granted Nov 15, 2016·8 cites·11 claims
- 1393US9082963B2Spin transfer torque cell for magnetic random access memoryIBM·Filed 2014·Granted Jul 14, 2015·7 cites·10 claims
- 1492US8835889B1Parallel shunt paths in thermally assisted magnetic memory cellsIBM·Filed 2013·Granted Sep 16, 2014·10 cites·14 claims
- 1591US8852762B2Magnetic random access memory with synthetic antiferromagnetic storage layers and non-pinned reference layersABRAHAM DAVID W·Filed 2012·Granted Oct 7, 2014·12 cites·6 claims
- 1690US11264559B2Multilayered magnetic free layer structure for spin-transfer torque (STT) MRAMIBM·Filed 2019·Granted Mar 1, 2022·3 cites·8 claims
- 1789US9691463B1Spin hall effect MRAM with self-reference readIBM·Filed 2016·Granted Jun 27, 2017·5 cites·18 claims
- 1888US8866207B2Magnetic stacks with perpendicular magnetic anisotropy for spin momentum transfer magnetoresistive random access memoryHU GUOHAN·Filed 2012·Granted Oct 21, 2014·10 cites·25 claims
- 1988US7433225B2Scalable magnetic random access memory deviceIBM·Filed 2006·Granted Oct 7, 2008·14 cites·4 claims
- 2087US10424727B2Spin transfer torque cell for magnetic random access memoryIBM·Filed 2019·Granted Sep 24, 2019·1 cites·20 claims
- 2187US10083730B1Thermally-assisted spin transfer torque memory with improved bit error rate performanceIBM·Filed 2017·Granted Sep 25, 2018·6 cites·25 claims
- 2287US8928100B2Spin transfer torque cell for magnetic random access memoryGAIDIS MICHAEL C·Filed 2011·Granted Jan 6, 2015·4 cites·10 claims
- 2387US8283741B2Optimized free layer for spin torque magnetic random access memoryHU GUOHAN·Filed 2010·Granted Oct 9, 2012·7 cites·20 claims
- 2486US7982249B2Magnetic tunnel junction transistorIBM·Filed 2010·Granted Jul 19, 2011·6 cites·19 claims
- 2585US9853205B1Spin transfer torque magnetic tunnel junction with off-centered current flowIBM·Filed 2016·Granted Dec 26, 2017·6 cites·17 claims
- 2685US8750033B2Reading a cross point cell arrayIBM·Filed 2012·Granted Jun 10, 2014·9 cites·20 claims
- 2784US9941463B2Magnetic field sensor based on topological insulator and insulating coupler materialsIBM·Filed 2015·Granted Apr 10, 2018·2 cites·17 claims
- 2884US9472754B2In-situ annealing to improve the tunneling magneto-resistance of magnetic tunnel junctionsIBM·Filed 2016·Granted Oct 18, 2016·3 cites·1 claims
- 2984US9087543B2Spin torque MRAM having perpendicular magnetization with oxide interfaceIBM·Filed 2013·Granted Jul 21, 2015·5 cites·6 claims
- 3083US7535069B2Magnetic tunnel junction with enhanced magnetic switching characteristicsIBM·Filed 2006·Granted May 19, 2009·15 cites·20 claims
- 3182US9793471B2Spin transfer torque cell for magnetic random access memoryIBM·Filed 2016·Granted Oct 17, 2017·1 cites·11 claims
- 3282US8456895B2Magnonic magnetic random access memory deviceABRAHAM DAVID W·Filed 2011·Granted Jun 4, 2013·8 cites·16 claims
- 3382US8406040B2Spin-torque based memory device using a magnesium oxide tunnel barrierWORLEDGE DANIEL C·Filed 2010·Granted Mar 26, 2013·5 cites·21 claims
- 3481US10361361B2Thin reference layer for STT MRAMIBM·Filed 2016·Granted Jul 23, 2019·3 cites·10 claims
- 3581US9963780B2Growth of metal on a dielectricIBM·Filed 2015·Granted May 8, 2018·1 cites·20 claims
- 3681US9941469B2Double spin filter tunnel junctionIBM·Filed 2015·Granted Apr 10, 2018·2 cites·7 claims
- 3781US9620708B2Perpendicular magnetic anisotropy BCC multilayersIBM·Filed 2016·Granted Apr 11, 2017·3 cites·14 claims
- 3881US8785966B2Magnetic tunnel junction transistor devicesWORLEDGE DANIEL CHRISTOPHER·Filed 2011·Granted Jul 22, 2014·9 cites·25 claims
- 3981US8536668B2Seed layer and free magnetic layer for perpindicular anisotropy in a spin-torque magnetic random access memoryWORLEDGE DANIEL C·Filed 2012·Granted Sep 17, 2013·4 cites·14 claims
- 4081US8102174B2Techniques for electrically characterizing tunnel junction film stacks with little or no processingWORLEDGE DANIEL CHRISTOPHER·Filed 2009·Granted Jan 24, 2012·7 cites·19 claims
- 4180US6927569B2Techniques for electrically characterizing tunnel junction film stacks with little or no processingINFINEON TECHNOLOGIES AG·Filed 2002·Granted Aug 9, 2005·28 cites·19 claims
- 4279US10916581B2Multilayered magnetic free layer structure containing an ordered magnetic alloy first magnetic free layer for spin-transfer torque (STT) MRAMIBM·Filed 2019·Granted Feb 9, 2021·1 cites·18 claims
- 4379US10468455B2Simplified double magnetic tunnel junctionsIBM·Filed 2016·Granted Nov 5, 2019·4 cites·20 claims
- 4477US10686123B2Multilayered magnetic free layer structure for spin-transfer torque (STT) MRAMIBM·Filed 2018·Granted Jun 16, 2020·1 cites·25 claims
- 4576US8912614B2Magnetic tunnel junction devices having magnetic layers formed on composite, obliquely deposited seed layersVETR FRANCESCO A·Filed 2011·Granted Dec 16, 2014·5 cites·21 claims
- 4676US2024349620A1Mtj pillar having temperature-independent deltaIBM·Filed 2024·Application pending·0 cites
- 4775US9917247B2Structure for thermally assisted MRAMIBM·Filed 2016·Granted Mar 13, 2018·3 cites·20 claims
- 4875US7791152B2Magnetic tunnel junction transistorIBM·Filed 2008·Granted Sep 7, 2010·4 cites·13 claims
- 4974US10294561B2Growth of metal on a dielectricIBM·Filed 2018·Granted May 21, 2019·0 cites·20 claims
- 5074US9490422B1Current constriction for spin torque MRAMIBM·Filed 2015·Granted Nov 8, 2016·2 cites·9 claims
Showing the top 50 of 165 patent records by PatentIndex Score.
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