Inventor · disambiguated record
Ki-Whan Song
Also filed as: SONG KI W · SONG KI-WHAN
67 granted patents·6 pending applications·770 citations·filing 1979–2018
99Inventor score
Files withSAMSUNG ELECTRONICS CO LTD49KIM JIN YOUNG5SONG KI-WHAN4TAK NAM-KYUN4KOOKJE ELEC IND CO LTD2
Top patents by PatentIndex Score
73 records- 0197US7741673B2Floating body memory and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 22, 2010·226 cites·19 claims
- 0297US7442988B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 28, 2008·50 cites·19 claims
- 0396US7977736B2Vertical channel transistors and memory devices including vertical channel transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 12, 2011·48 cites·15 claims
- 0495US7564084B2Dual-gate dynamic random access memory device having vertical channel transistors and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 21, 2009·32 cites·8 claims
- 0591US8575672B2Nonvolatile semiconductor memory devicesSONG KI-WHAN·Filed 2011·Granted Nov 5, 2013·11 cites·19 claims
- 0691US7567452B2Multi-level dynamic memory device having open bit line structure and method of driving the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 28, 2009·24 cites·17 claims
- 0790US8179707B2Semiconductor memory devices and methods of arranging memory cell arrays thereofSONG KI-WHAN·Filed 2009·Granted May 15, 2012·20 cites·24 claims
- 0890US7851859B2Single transistor memory device having source and drain insulating regions and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Dec 14, 2010·17 cites·16 claims
- 0986US7525146B2Nonvolatile semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 28, 2009·10 cites·8 claims
- 1086US6366113B1Data receiverSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Apr 2, 2002·31 cites·9 claims
- 1185US8248871B2Redundancy circuits and semiconductor memory devicesPARK DUK-HA·Filed 2010·Granted Aug 21, 2012·9 cites·18 claims
- 1284US6580184B2Electrostatic discharge (ESD) protection circuit of silicon-controlled rectifier (SCR) structure operable at a low trigger voltageSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jun 17, 2003·34 cites·19 claims
- 1383US8009473B2Semiconductor memory device including memory cell array having memory cells using floating body transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 30, 2011·10 cites·24 claims
- 1483US7906397B2Methods of fabricating nonvolatile semiconductor memory devices including a plurality of stripes having impurity layers thereinSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Mar 15, 2011·7 cites·13 claims
- 1581US10593408B2Nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Mar 17, 2020·4 cites·17 claims
- 1679US6222354B1Charge compensator for voltage regulatorSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Apr 24, 2001·27 cites·16 claims
- 1777US8503218B2Nonvolatile memory device using resistance material and memory system including the nonvolatile memory deviceKIM JIN-YOUNG·Filed 2011·Granted Aug 6, 2013·6 cites·12 claims
- 1877US8009488B2Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Aug 30, 2011·10 cites·20 claims
- 1977US7843750B2Semiconductor memory device comprising transistor having vertical channel structureSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 30, 2010·6 cites·22 claims
- 2076US9342447B2Data storage system and method of operating data storage systemKIM KYUNG-RYUN·Filed 2013·Granted May 17, 2016·4 cites·28 claims
- 2175US8842484B2Voltage generator, nonvolatile memory device comprising voltage generator, and method of operating voltage generatorKWON DUK-MIN·Filed 2011·Granted Sep 23, 2014·6 cites·17 claims
- 2273US7633096B2Silicon-controlled rectifier for electrostatic discharge protection circuits and structure thereofSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 15, 2009·5 cites·19 claims
- 2373US6313670B1Integrated driver circuits having current control capabilitySAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Nov 6, 2001·33 cites·18 claims
- 2472US7777999B2Electrostatic discharge (ESD) protection deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 17, 2010·5 cites·18 claims
- 2572US6384619B1Integrated circuit devices having metastability protection circuits thereinSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted May 7, 2002·14 cites·21 claims
- 2671US9042167B2Phase change memoryKWON DUK-MIN·Filed 2012·Granted May 26, 2015·5 cites·12 claims
- 2771US7433223B2Memory devices including floating body transistor capacitorless memory cells and related methodsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 7, 2008·7 cites·35 claims
- 2870US7924644B2Semiconductor memory device including floating body transistor memory cell array and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Apr 12, 2011·7 cites·19 claims
- 2969US10170192B2Nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jan 1, 2019·2 cites·20 claims
- 3069US8331162B2Semiconductor memory device having hierarchical bit line structure and method of driving the semiconductor memory deviceKIM JIN-YOUNG·Filed 2010·Granted Dec 11, 2012·4 cites·11 claims
- 3169US7548447B2Semiconductor memory device and methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 16, 2009·4 cites·3 claims
- 3268US7709308B2Semiconductor devices and methods of fabricating the same including forming a fin with first and second gates on the sidewallsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted May 4, 2010·3 cites·13 claims
- 3366US6184701B1Integrated circuit devices having metastability protection circuits thereinSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Feb 6, 2001·20 cites·13 claims
- 3463US8861264B2Memory device, precharge controlling method thereof, and devices having the sameSONG ICK HYUN·Filed 2011·Granted Oct 14, 2014·4 cites·20 claims
- 3563US8134202B2Capacitorless one-transistor semiconductor memory device having improved data retention abilities and operation characteristicsTAK NAM-KYUN·Filed 2009·Granted Mar 13, 2012·3 cites·18 claims
- 3663US7580314B2Memory device having open bit line structure and method of sensing data therefromSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 25, 2009·5 cites·22 claims
- 3762US7969808B2Memory cell structures, memory arrays, memory devices, memory controllers, and memory systems, and methods of manufacturing and operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jun 28, 2011·4 cites·46 claims
- 3862US7595532B2Semiconductor memory devices and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 29, 2009·2 cites·9 claims
- 3961US8982618B2Nonvolatile memory device and related method of operationSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Mar 17, 2015·2 cites·19 claims
- 4060US7944759B2Semiconductor memory device including floating body transistorSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted May 17, 2011·4 cites·25 claims
- 4160US7505302B2Multi-level dynamic memory deviceSAMSUNG ELECTRIC·Filed 2006·Granted Mar 17, 2009·3 cites·8 claims
- 4258US8772872B2Transistors, semiconductor memory cells having a transistor and methods of forming the sameTAK NAM-KYUN·Filed 2009·Granted Jul 8, 2014·2 cites·15 claims
- 4357US8023337B2Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 20, 2011·3 cites·14 claims
- 4455US7835208B2Multi-level dynamic memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Nov 16, 2010·2 cites·8 claims
- 4555US7577025B2Semiconductor memory device comprising floating body memory cells and related methods of operationSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 18, 2009·3 cites·23 claims
- 4655US4675478AElectric power control switchKOOKJE ELEC IND CO LTD·Filed 1985·Granted Jun 23, 1987·11 cites·8 claims
- 4754US8362539B2Semiconductor device and semiconductor package including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jan 29, 2013·0 cites·20 claims
- 4853US8120979B2Semiconductor memory devices having hierarchical bit-line structuresKIM JIN-YOUNG·Filed 2009·Granted Feb 21, 2012·2 cites·19 claims
- 4951US7675771B2Capacitor-less DRAM circuit and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 9, 2010·2 cites·34 claims
- 5050US7619928B2Semiconductor memory device including floating body memory cells and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 17, 2009·2 cites·20 claims
Showing the top 50 of 73 patent records by PatentIndex Score.
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