Inventor · disambiguated record
Narumasa Soejima
Also filed as: SOEJIMA NARUMASA
44 granted patents·9 pending applications·207 citations·filing 2005–2021
97Inventor score
Top patents by PatentIndex Score
53 records- 0197US7777252B2III-V hemt devicesTOYOTA MOTOR CO LTD·Filed 2005·Granted Aug 17, 2010·78 cites·4 claims
- 0295US9136372B2Silicon carbide semiconductor deviceMIYAHARA SHINICHIRO·Filed 2012·Granted Sep 15, 2015·37 cites·1 claims
- 0391US8440524B2Semiconductor device manufacturing methodFUJIWARA HIROKAZU·Filed 2011·Granted May 14, 2013·14 cites·15 claims
- 0488US9954096B2Switching device and method of manufacturing the sameTOYOTA MOTOR CO LTD·Filed 2017·Granted Apr 24, 2018·5 cites·4 claims
- 0587US9818860B2Silicon carbide semiconductor device and method for producing the sameDENSO CORP·Filed 2016·Granted Nov 14, 2017·4 cites·6 claims
- 0685US8748975B2Switching element and manufacturing method thereofFUJIWARA HIROKAZU·Filed 2012·Granted Jun 10, 2014·7 cites·9 claims
- 0783US9853139B2Semiconductor device and method for manufacturing the semiconductor deviceTOYOTA MOTOR CO LTD·Filed 2015·Granted Dec 26, 2017·4 cites·6 claims
- 0882US9793376B2Silicon carbide semiconductor device and method of manufacturing the sameDENSO CORP·Filed 2013·Granted Oct 17, 2017·5 cites·5 claims
- 0981US9543428B2Silicon carbide semiconductor device and method for producing the sameDENSO CORP·Filed 2013·Granted Jan 10, 2017·4 cites·13 claims
- 1081US8575689B2Silicon carbide semiconductor device and manufacturing method of the sameMIMURA TOMOHIRO·Filed 2011·Granted Nov 5, 2013·9 cites·3 claims
- 1180US9337298B2Silicon carbide semiconductor device and method for producing the sameDENSO CORP·Filed 2013·Granted May 10, 2016·4 cites·6 claims
- 1276US9201094B2Wafer examination device and wafer examination methodFUJIWARA HIROKAZU·Filed 2013·Granted Dec 1, 2015·3 cites·11 claims
- 1376US8618555B2Silicon carbide semiconductor device and method of manufacturing the sameSUZUKI NAOHIRO·Filed 2011·Granted Dec 31, 2013·5 cites·11 claims
- 1475US11171231B2Silicon carbide semiconductor device and method for manufacturing the sameDENSO CORP·Filed 2020·Granted Nov 9, 2021·1 cites·4 claims
- 1574US8008749B2Semiconductor device having vertical electrodes structureTOYOTA MOTOR CO LTD·Filed 2005·Granted Aug 30, 2011·6 cites·23 claims
- 1673US8492867B2Semiconductor device including cell region and peripheral region having high breakdown voltage structureYAMAMOTO KENSAKU·Filed 2011·Granted Jul 23, 2013·4 cites·15 claims
- 1772US9735260B2III-V HEMT devicesTOYOTA MOTOR CO LTD·Filed 2014·Granted Aug 15, 2017·2 cites·4 claims
- 1868US9779906B2Electron emission device and transistor provided with the sameTOYOTA CHUO KENKYUSHO KK·Filed 2015·Granted Oct 3, 2017·1 cites·15 claims
- 1967US9773883B2Method for manufacturing insulated gate type switching device having low-density body region and high-density body regionSOENO AKITAKA·Filed 2014·Granted Sep 26, 2017·2 cites·1 claims
- 2066US10388527B2Method of manufacturing semiconductor deviceTOYOTA MOTOR CO LTD·Filed 2017·Granted Aug 20, 2019·1 cites·2 claims
- 2166US8525223B2Silicon carbide semiconductor deviceWATANABE HIROKI·Filed 2012·Granted Sep 3, 2013·2 cites·7 claims
- 2264US9608104B2Silicon carbide semiconductor device and method for manufacturing sameDENSO CORP·Filed 2014·Granted Mar 28, 2017·1 cites·8 claims
- 2363US10290707B2Semiconductor deviceTOYOTA MOTOR CO LTD·Filed 2016·Granted May 14, 2019·1 cites·10 claims
- 2462US9673288B2Silicon carbide semiconductor device including conductivity layer in trenchDENSO CORP·Filed 2013·Granted Jun 6, 2017·1 cites·10 claims
- 2562US8975139B2Manufacturing method of silicon carbide semiconductor deviceMIYAHARA SHINICHIRO·Filed 2012·Granted Mar 10, 2015·1 cites·17 claims
- 2661US9640655B2Semiconductor device and manufacturing method of semiconductor deviceNISHIMURA SHINYA·Filed 2013·Granted May 2, 2017·1 cites·4 claims
- 2761US7800130B2Semiconductor devicesTOYOTA MOTOR CO LTD·Filed 2006·Granted Sep 21, 2010·2 cites·6 claims
- 2858US9257501B2Semiconductor deviceTAKAYA HIDEFUMI·Filed 2013·Granted Feb 9, 2016·1 cites·5 claims
- 2954US9142411B2Method for producing semiconductor deviceTSUJIMURA MASATOSHI·Filed 2013·Granted Sep 22, 2015·1 cites·13 claims
- 3051US11107691B2Method of manufacturing semiconductor deviceDENSO CORP·Filed 2020·Granted Aug 31, 2021·0 cites·3 claims
- 3148US9515160B2Silicon carbide semiconductor device and method for producing the sameDENSO CORP·Filed 2016·Granted Dec 6, 2016·0 cites·7 claims
- 3248US9184271B2III-V HEMT devicesSUGIMOTO MASAHIRO·Filed 2010·Granted Nov 10, 2015·0 cites·6 claims
- 3347US10522627B2Semiconductor deviceTOYOTA MOTOR CO LTD·Filed 2018·Granted Dec 31, 2019·0 cites·7 claims
- 3444US11967564B2Method for manufacturing semiconductor deviceDENSO CORP·Filed 2021·Granted Apr 23, 2024·0 cites·18 claims
- 3544US8878290B2Semiconductor deviceTAKAYA HIDEFUMI·Filed 2013·Granted Nov 4, 2014·0 cites·3 claims
- 3643US9607836B2Semiconductor device and manufacturing method of semiconductor deviceFUJIWARA HIROKAZU·Filed 2013·Granted Mar 28, 2017·0 cites·3 claims
- 3742US9276075B2Semiconductor device having vertical MOSFET structure that utilizes a trench-type gate electrode and method of producing the sameTAKAYA HIDEFUMI·Filed 2012·Granted Mar 1, 2016·0 cites·7 claims
- 3842US8518809B2Manufacturing method of silicon carbide single crystalWATANABE HIROKI·Filed 2011·Granted Aug 27, 2013·0 cites·18 claims
- 3941US10177138B2Semiconductor deviceTOYOTA CHUO KENKYUSHO KK·Filed 2018·Granted Jan 8, 2019·0 cites·5 claims
- 4041US2014191248A1Semiconductor deviceTAKAYA HIDEFUMI·Filed 2014·Application pending·0 cites
- 4141US2011316049A1Nitride semiconductor device and method of manufacturing the sameSUGIMOTO MASAHIRO·Filed 2009·Application pending·0 cites
- 4239US10177236B2Method of manufacturing semiconductor deviceTOYOTA MOTOR CO LTD·Filed 2017·Granted Jan 8, 2019·0 cites·7 claims
- 4339US2009134456A1Semiconductor devices and method of manufacturing themSUGIMOTO MASAHIRO·Filed 2006·Application pending·0 cites
- 4438US10593662B2Protection deviceTOKAI RIKA CO LTD·Filed 2018·Granted Mar 17, 2020·0 cites·7 claims
- 4538US9899469B2Semiconductor device and manufacturing method thereofTOYOTA MOTOR CO LTD·Filed 2015·Granted Feb 20, 2018·0 cites·3 claims
- 4638US2011203513A1Method of manufacturing silicon carbide substrateDENSO CORP·Filed 2011·Application pending·0 cites
- 4737US9281364B2Semiconductor device and method of manufacturing the sameTOYOTA MOTOR CO LTD·Filed 2014·Granted Mar 8, 2016·0 cites·7 claims
- 4837US2013105889A1Switching device and method for manufacturing the sameFUJIWARA HIROKAZU·Filed 2012·Application pending·0 cites
- 4937US2012319136A1Silicon carbide semiconductor device and method for manufacturing the sameNOBORIO MASATO·Filed 2012·Application pending·0 cites
- 5037US2012181551A1Silicon carbide semiconductor deviceMIYAHARA SHINICHIRO·Filed 2012·Application pending·0 cites
Showing the top 50 of 53 patent records by PatentIndex Score.
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