Inventor · disambiguated record
Cha-Young Yoo
Also filed as: YOO CHA-YOUNG
71 granted patents·20 pending applications·663 citations·filing 1996–2021
99Inventor score
Files withSAMSUNG ELECTRONICS CO LTD66EUGENE TECHNOLOGY CO LTD8LEE JONG-CHEOL3CHUNG SUK-JIN2CHOI HAN-MEI1
Top patents by PatentIndex Score
91 records- 0198US7482677B2Dielectric structures having high dielectric constants, and non-volatile semiconductor memory devices having the dielectric structuresSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 27, 2009·88 cites·7 claims
- 0295US6580111B2Metal-insulator-metal capacitorSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jun 17, 2003·77 cites·3 claims
- 0391US7723770B2Integrated circuit capacitors having composite dielectric layers therein containing crystallization inhibiting regionsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 25, 2010·15 cites·21 claims
- 0488US8889560B2Methods of forming fine patterns for semiconductor deviceCHUNG BYUNG-HONG·Filed 2012·Granted Nov 18, 2014·11 cites·16 claims
- 0586US7018933B2Method of forming a metal-insulator-metal capacitorSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Mar 28, 2006·30 cites·15 claims
- 0685US7279392B2Thin film structure, capacitor, and methods for forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 9, 2007·6 cites·37 claims
- 0783US9076647B2Method of forming an oxide layer and method of manufacturing semiconductor device including the oxide layerCHUNG SUK-JIN·Filed 2012·Granted Jul 7, 2015·8 cites·21 claims
- 0882US8790986B2Methods of manufacturing semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Jul 29, 2014·7 cites·16 claims
- 0981US7973352B2Capacitors having composite dielectric layers containing crystallization inhibiting regionsSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Jul 5, 2011·4 cites·11 claims
- 1081US7655519B2Methods of fabricating metal-insulator-metal capacitors with a chemical barrier layer in a lower electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 2, 2010·9 cites·19 claims
- 1181US6750092B2Methods of forming ruthenium film by changing process conditions during chemical vapor deposition and ruthenium films formed therebySAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jun 15, 2004·21 cites·25 claims
- 1279US10840118B2Substrate processing apparatus and method for assembling tube assemblyEUGENE TECHNOLOGY CO LTD·Filed 2016·Granted Nov 17, 2020·3 cites·8 claims
- 1378US6815221B2Method for manufacturing capacitor of semiconductor memory device controlling thermal budgetSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Nov 9, 2004·23 cites·67 claims
- 1476US7314806B2Methods of forming metal-insulator-metal (MIM) capacitors with separate seedSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 1, 2008·5 cites·18 claims
- 1574US7402491B2Methods of manufacturing a semiconductor device including a dielectric layer including zirconiumSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 22, 2008·4 cites·15 claims
- 1674US6680251B2Methods of chemical vapor depositing ruthenium by varying chemical vapor deposition parametersSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jan 20, 2004·16 cites·14 claims
- 1773US10364494B2Substrate processing apparatusEUGENE TECHNOLOGY CO LTD·Filed 2016·Granted Jul 30, 2019·2 cites·13 claims
- 1873US6653186B2Methods of fabrication integrated circuit capacitors having a dielectric layer between a u-shaped lower electrode and a support layerSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Nov 25, 2003·15 cites·9 claims
- 1972US6613629B2Methods for manufacturing storage nodes of stacked capacitorsSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Sep 2, 2003·16 cites·28 claims
- 2071US7485585B2Method of forming a thin film, method of manufacturing a gate structure using the same and method of manufacturing a capacitor using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 3, 2009·3 cites·17 claims
- 2171US6537875B2Semiconductor memory device for reducing damage to interlevel dielectric layer and fabrication method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Mar 25, 2003·15 cites·17 claims
- 2268US7495292B2Integrated circuit devices having pad contact plugs in the cell array and peripheral circuit regions of the integrated circuit substrateSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Feb 24, 2009·3 cites·22 claims
- 2367US6806183B2Methods for forming capacitors on semiconductor substratesSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Oct 19, 2004·10 cites·21 claims
- 2467US5622889AHigh capacitance capacitor manufacturing methodSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Apr 22, 1997·27 cites·5 claims
- 2566US9059330B2Methods of forming integrated circuit capacitors having composite dielectric layers therein containing crystallization inhibiting regionsSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Jun 16, 2015·1 cites·21 claims
- 2666US6221742B1Method for fabricating polysilicon film for semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Apr 24, 2001·23 cites·14 claims
- 2766US2022028658A1Plasma processing apparatusEUGENE TECHNOLOGY CO LTD·Filed 2021·Application pending·0 cites
- 2865US7172946B2Methods for forming semiconductor devices including thermal processingSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 6, 2007·10 cites·27 claims
- 2965US7049232B2Methods for forming ruthenium films with β-diketone containing ruthenium complexes and method for manufacturing metal-insulator-metal capacitor using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted May 23, 2006·8 cites·26 claims
- 3065US6743678B2Methods for manufacturing semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jun 1, 2004·11 cites·26 claims
- 3164US7442981B2Capacitor of semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 28, 2008·4 cites·23 claims
- 3263US5721153AMethod of making capacitor of highly integrated semiconductor device using multiple insulation layersSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Feb 24, 1998·22 cites·9 claims
- 3362US7179739B2Methods of forming a semiconductor device including a metal silicide layer between a conductive plug and a bottom electrode of a capacitorSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Feb 20, 2007·10 cites·21 claims
- 3461US8339765B2CapacitorCHOI HOON-SANG·Filed 2009·Granted Dec 25, 2012·3 cites·9 claims
- 3561US7842581B2Methods of forming metal layers using oxygen gas as a reaction source and methods of fabricating capacitors using such metal layersSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 30, 2010·1 cites·11 claims
- 3661US7008837B2Method of manufacturing capacitor by performing multi-stepped wet treatment on surface of electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 7, 2006·7 cites·26 claims
- 3760US6039811AApparatus for fabricating polysilicon film for semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Mar 21, 2000·18 cites·6 claims
- 3859US6995071B2Methods of forming MIM type capacitor structures using low temperature plasma processingSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Feb 7, 2006·6 cites·15 claims
- 3958US6472319B2Method for manufacturing capacitor of semiconductor memory device by two-step thermal treatmentSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Oct 29, 2002·6 cites·48 claims
- 4057US6884673B2Methods of forming integrated circuit devices having metal-insulator-metal (MIM) capacitorSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Apr 26, 2005·6 cites·15 claims
- 4157US6762091B2Methods for manufacturing semiconductor devices having a metal layerSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jul 13, 2004·7 cites·26 claims
- 4256US6692795B2Method for fabricating semiconductor device having ruthenium layer and equipment for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Feb 17, 2004·5 cites·19 claims
- 4355US8318560B2Methods of forming integrated circuit devices including a capacitorKIM WAN-DON·Filed 2007·Granted Nov 27, 2012·0 cites·11 claims
- 4455US7205219B2Methods of forming integrated circuits devices having pad contact plugs in the cell array and peripheral circuit regions of the integrated circuit substrateSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Apr 17, 2007·5 cites·19 claims
- 4555US7042042B2Integrated circuit capacitors having a dielectric layer between a U-shaped lower electrode and a support layerSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted May 9, 2006·5 cites·12 claims
- 4655US2020243301A1Plasma processing apparatusEUGENE TECHNOLOGY CO LTD·Filed 2018·Application pending·0 cites
- 4754US7091102B2Methods of forming integrated circuit devices having a capacitor with a hydrogen barrier spacer on a sidewall thereof and integrated circuit devices formed therebySAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Aug 15, 2006·4 cites·63 claims
- 4853US7304367B2Metal-insulator-metal capacitors including transition metal silicide films on doped polysilicon contact plugsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Dec 4, 2007·6 cites·9 claims
- 4953US6146935AMethod for forming capacitor of semiconductor device using pre-bakeSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Nov 14, 2000·13 cites·9 claims
- 5053US2010117194A1Metal-insulator-metal capacitors with a chemical barrier layer in a lower electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
Showing the top 50 of 91 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →