Inventor · disambiguated record
Christopher W. Hill
Also filed as: HILL CHRISTOPHER · HILL CHRISTOPHER W
22 granted patents·2 pending applications·399 citations·filing 1987–2007
96Inventor score
Top patents by PatentIndex Score
24 records- 0195US7271050B2Silicon nanocrystal capacitor and process for forming sameMICRON TECHNOLOGY INC·Filed 2005·Granted Sep 18, 2007·35 cites·20 claims
- 0293US6198144B1Passivation of sidewalls of a word line stackMICRON TECHNOLOGY INC·Filed 1999·Granted Mar 6, 2001·97 cites·32 claims
- 0393US4784973ASemiconductor contact silicide/nitride process with control for silicide thicknessINMOS CORP·Filed 1987·Granted Nov 15, 1988·116 cites·11 claims
- 0490US7173304B2Method of manufacturing devices comprising conductive nano-dots, and devices comprising sameMICRON TECHNOLOGY INC·Filed 2005·Granted Feb 6, 2007·26 cites·57 claims
- 0579US6368986B1Use of selective ozone TEOS oxide to create variable thickness layers and spacersMICRON TECHNOLOGY INC·Filed 2000·Granted Apr 9, 2002·16 cites·7 claims
- 0678US7846812B2Methods of forming trench isolation and methods of forming floating gate transistorsMICRON TECHNOLOGY INC·Filed 2007·Granted Dec 7, 2010·8 cites·18 claims
- 0777US6617230B2Use of selective ozone teos oxide to create variable thickness layers and spacersMICRON TECHNOLOGY INC·Filed 2001·Granted Sep 9, 2003·14 cites·19 claims
- 0873US7737047B2Semiconductor constructions, and methods of forming dielectric materialsMICRON TECHNOLOGY INC·Filed 2006·Granted Jun 15, 2010·1 cites·29 claims
- 0972US6777351B1Masking without photolithography during the formation of a semiconductor deviceMICRON TECHNOLOGY INC·Filed 2003·Granted Aug 17, 2004·11 cites·20 claims
- 1070US6924969B2Silicon nanocrystal capacitor and process for forming sameMICRON TECHNOLOGY INC·Filed 2004·Granted Aug 2, 2005·11 cites·12 claims
- 1168US6808983B2Silicon nanocrystal capacitor and process for forming sameMICRON TECHNOLOGY INC·Filed 2002·Granted Oct 26, 2004·10 cites·16 claims
- 1268US6602807B2Use of linear injectors to deposit uniform selective ozone TEOS oxide film by pulsing reactants on and offMICRON TECHNOLOGY INC·Filed 2002·Granted Aug 5, 2003·9 cites·12 claims
- 1367US6503851B2Use of linear injectors to deposit uniform selective ozone TEOS oxide film by pulsing reactants on and offMICRON TECHNOLOGY INC·Filed 2001·Granted Jan 7, 2003·8 cites·56 claims
- 1462US7611971B2Method of removing residual contaminants from an environmentMICRON TECHNOLOGY INC·Filed 2006·Granted Nov 3, 2009·0 cites·20 claims
- 1561US7247561B2Method of removing residual contaminants from an environmentMICRON TECHNOLOGY INC·Filed 2003·Granted Jul 24, 2007·3 cites·11 claims
- 1659US7214979B2Selectively deposited silicon oxide layers on a silicon substrateMICRON TECHNOLOGY INC·Filed 2004·Granted May 8, 2007·4 cites·59 claims
- 1759US5960303AProcess of forming titanium silicide interconnectsMICRON TECHNOLOGY INC·Filed 1997·Granted Sep 28, 1999·22 cites·23 claims
- 1854US7402533B2Masking without photolithography during the formation of a semiconductor deviceMICRON TECHNOLOGY INC·Filed 2006·Granted Jul 22, 2008·0 cites·18 claims
- 1952US7101814B2Masking without photolithography during the formation of a semiconductor deviceMICRON TECHNOLOGY INC·Filed 2004·Granted Sep 5, 2006·2 cites·20 claims
- 2048US7192893B2Use of linear injectors to deposit uniform selective ozone TEOS oxide film by pulsing reactants on and offMICRON TECHNOLOGY INC·Filed 2003·Granted Mar 20, 2007·1 cites·68 claims
- 2147US7858518B2Method for forming a selective contact and local interconnect in situMICRON TECHNOLOGY INC·Filed 2002·Granted Dec 28, 2010·1 cites·28 claims
- 2242US2002098633A1Use of selective ozone TEOS oxide to create variable thickness layers and spacersFiled 2002·Application pending·0 cites
- 2337US6372643B1Method for forming a selective contact and local interconnect in situ and semiconductor devices carrying the sameMICRON TECHNOLOGY INC·Filed 1998·Granted Apr 16, 2002·4 cites·37 claims
- 2437US2002063283A1Passivation of sidewalls of a word line stackFiled 2000·Application pending·0 cites
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